24xG
Abstract: 24xG652d e/28701-RPM
Text: 28701-RPM 253 3068 Uen Rev E Fiber Optic Patch Cable 8-24f, Indoor Multifiber Interconnect Cable Application This multifiber patch cable enables class-leading packaging density for optical interconnect applications. The assembly is intended for indoor interconnection
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28701-RPM
8-24f,
long-term700
110mm
24xG
24xG652d
e/28701-RPM
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PDF
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Untitled
Abstract: No abstract text available
Text: AMPLIMITE Connectors, Series 109 Straight PCB, Series 109, Standard Density Connectors MIL Qualified Material and Finish: A Shell — Steel, cadmium plated Insert — Approved material per MIL-DTL-24308 Contact — Copper alloy plated gold over nickel underplate*
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Original
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MIL-DTL-24308
5148-50F
24-11F
24-13F
24-14F
24-15F
24-16F
24-17F
24-19F
24-20F
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PDF
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Untitled
Abstract: No abstract text available
Text: AMPLIMITE Connectors, Series 109 Right-Angle, PCB Plugs, Series 109, Standard Density Connectors Industrial Grade Material and Finish: Shell — Steel, see below Insert and Post Spacer — Approved material per MIL-DTL-24308 Contact — Copper alloy with .000050
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Original
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MIL-DTL-24308
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PDF
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P4CN012W1
Abstract: FTR-P4CN012W1 FBR512 FTR-P4CN009W1 FTR-P4CN010W1 FTR-P4-CN012W1 Chattering relay p4cp fujitsu FTR-p4 relay
Text: FTR-P4 SERIES COMPACT POWER TWIN RELAY 1POLE X 2, H-BRIDGE—25 A FOR AUTOMOTIVE APPLICATIONS FTR-P4 Series • FEATURES Compact for high density packaging. 60% volume of previous generation FBR512 . ● High contact capacity with proven contact material.
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Original
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H-BRIDGE--25
FBR512)
600mW
P4CN012W1
FTR-P4CN012W1
FBR512
FTR-P4CN009W1
FTR-P4CN010W1
FTR-P4-CN012W1
Chattering relay
p4cp
fujitsu FTR-p4 relay
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PDF
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Untitled
Abstract: No abstract text available
Text: AMPLIMITE Connectors, Series 109 Right-Angle, PCB Plugs, Series 109, Standard Density Connectors MIL Qualified Material and Finish: Shell — Steel, cadmium plated Insert and Post Spacer — Approved material per MIL-DTL-24308 Contact — Copper alloy with .000050
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Original
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MIL-DTL-24308
24-45F
24-46F
24-47F
24-55F
24-56F
24-57F
24-58F
24-59F
M24308
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Original
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
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Original
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Si7456DP
Si7456DP-T1-E3
Si7456DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: THS6182 www.ti.com SLLS544B – SEPTEMBER 2002 – REVISED DECEMBER 2002 LOW POWER DISSIPATION ADSL LINE DRIVER FEATURES D Low Power Dissipation Increases ADSL Line D D D D D D D D Card Density Low THD of –88 dBc 100-Ω, 1 MHz Low MTPR Driving +20 dBm on the Line
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Original
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THS6182
SLLS544B
44VPP
EL1503C
EL1508C
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PDF
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory
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Original
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AMP377P3323AT2-C1H/H
AMP377P3323AT2-C1H/H
400mil
18-bits
168-pin
0022uF
100MHz
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M16730B IBM11M16730C 16M x 72 DRAM MODULE Features • 16 8 Pin J E D E C Standard, 8 Byte D ual In-line M em ory M odule • 1 6 M x 7 2 Fast P age M ode D IM M s • Perform ance: • S ystem P erform ance B enefits: - Buffered inputs except R A S , D ata
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IBM11M16730B
IBM11M16730C
IBM11M16730CBC
07H1729
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 8 7 3 0 H B 8M X 72 DRAM M ODULE Features • 168 Pin JE D E C Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM -60 - Buffered inputs except RAS, Data
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OCR Scan
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8Mx72
110ns
03H7154
T00bl4fc>
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM13N2649JC IBM13N2739JC 2M x 64/72 1 B ank U nbuffered S D R A M M odule Features 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 2Mx64/72 Synchronous DRAM DIMM Performance: 10 CAS Latency Units 3 jf c K I Clock j t CK Clock Cycle Frequency
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OCR Scan
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IBM13N2649JC
IBM13N2739JC
2Mx64/72
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PDF
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Untitled
Abstract: No abstract text available
Text: S M J27C 040 4 1 9 4 3 0 4 -B IT U V E R A S A B LE P R O G R A M M A B L E R E A D -O N L Y M E M O R Y SGMS046A-NOVEMBER 1992- REVISEDJUNE 1995 • Organization . . . 512K x 8 Jpackage • Single 5-V Power Supply T0P V1EW • Industry Standard 32-Pin Dual-ln-llne
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OCR Scan
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SGMS046A-NOVEMBER
32-Pin
27C040-10
27C040-12
27C040-15
400-mV
SMJ27C040
4194304-BIT
S046A
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PDF
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jeida dram 88 pin
Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
Text: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba
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88-pin
60-pin
jeida dram 88 pin
88pins
toshiba dram
jeida dram card 5v
88 pins dram card
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PDF
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72V3680
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 3.3 VOLT HIGH-DENSITY 36-BIT SyncFlFO 4,096 x 36 8,192 x 36 1 6 ,3 8 4 x 3 6 32,768 x 36 65,536 x 36 1 3 1 ,0 7 2 x 3 6 FEATURES: • Choose among the following memory organizations: IDT72V3660 4 ,0 9 6 x 3 6 IDT72V3670
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36-BIT
IDT72V3660
IDT72V3670
IDT72V3680
IDT72V3690
IDT72V36100
IDT72V36110
72V3660
72V3670
72V3680
72V3680
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PDF
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72V273
Abstract: No abstract text available
Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8 ,1 9 2 x 1 8 /1 6 ,3 8 4 x 9 16,384 X 18/32,768x9 3 2,7 68 x 18 /65 ,5 36 x9 65,5 36 x 18 /13 1,07 2x 9 131,072x18/262,144x9 262.144x18/524.288x9 In teg rated D evice Technology, Inc. FEATURES: • Choose among the following memory organizations:
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OCR Scan
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768x9
072x18/262
144x9
144x18/524
288x9
IDT72V263
IDT72V273
IDT72V283
IDT72V293
IDT72V2103
72V273
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8,192 x 18/16,384x9 16,384 x 18/32,768x9 32,768 x 18/65,536x9 65,536x 18/131,072x9 131,072 x 18/262,144x9 262.144 x 18/524.288x9 Integrated Device Technology, Inc. FEATURES: PRELIMINARY IDT72V263 IDT72V273
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384x9
768x9
536x9
072x9
144x9
288x9
IDT72V263
IDT72V273
IDT72V283
IDT72V293
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PDF
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CS10 Citizen
Abstract: Crystal CS10 CS10 cs10 crystal ck60c DC100V M77A smd 77a 77-AH
Text: AT-CUT CRYSTAL UNIT RoHS Compliant Standard CITIZEN. SMD • Ceramic Package CS10 2000pcs/reel •FEATURES • H igh-density SM D type. • R eliable ceram ic package and excellent environm ental characteristics. • Suitable fo r various applications such as
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2000pcs/reel
30ppm
50ppm
50/iW
500MQMin.
DC100VÂ
CS10 Citizen
Crystal CS10
CS10
cs10 crystal
ck60c
DC100V
M77A
smd 77a
77-AH
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PDF
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Untitled
Abstract: No abstract text available
Text: SN 54A LS1640A , S N 7 4 A L S 1640A, SN 54 A LS1 645 A , S N 74 A LS 1 645 A OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS D 2 6 6 1 , D E C E M B E R 1 9 8 2 - R E V IS E D M A Y 1 9 8 6 Bidirectinal Bus Transceivers in High-Density 20-Pin Packages SN 54A LS' . . . J PACKAGE
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LS1640A
20-Pin
300-m
74ALS'
LS1640A
LS1645A
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PDF
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Untitled
Abstract: No abstract text available
Text: P ftS y O lK IM V in te i 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time Extended Cycling Capability — 100,000 Block Erase Cycles
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OCR Scan
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28F008SA
44-Lead
28F008SA-L
AP-359
28F008SA
AP-360
25F008SA
AP-364
ER-27
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS6709 262,144-BIT HIGH-SPEED STATIC RANDOM-ACCESS MEMORY MARCH 1990 Organization . . . 65,536 x 4 DJ PACKAGE TOP VIEW Single 5-V Power Supply 10% Tolerance High Density 28-Pin Package All Inputs/Outputs Fully TTL Compatible NC E 1 A0 Max Access/Min Cycle Time
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OCR Scan
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TMS6709
144-BIT
28-Pin
TMS6709-20
TMS6709-25
SMSS709
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PDF
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Untitled
Abstract: No abstract text available
Text: Â P M ftK K S S 0 M F ^ 5 M Y 0 ö [M in te i 28F008SA-L 8 MBIT (1 MBIT x 8) FLASH MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Deep-Powerdown Mode — 0.20 f iA Ice Typical
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OCR Scan
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28F008SA-L
44-Lead
E28F008SA-L200
F28F008SA-L200
PA28F008SA-L200
28F008SA
AP-359
AP-360
25F008SA
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PDF
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SN54382
Abstract: SN74F382
Text: SN54382, SN74F3B2 ARITHMETIC LOGIC/FUNCTION GENERATORS □ 2 9 3 2 , M A R C H 1 9 8 7 -R E V IS E D JA N U A R Y 1989 SN 54F382 . . J PACKAGE SN 74F382 . . DW OR N PACKAG E Ideally Suited for Hlgh-Density Economical Processors ITO P VIEW : 1 B1 C 2 AOC 3
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OCR Scan
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SN54382,
SN74F3B2
20-Pln
300-mil
SN54382
SN74F382
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54ALS299, SN74ALS299 8-BIT UNIVERSAL SHIFT/STORAGE REGISTERS WITH 3-STATE OUTPUTS SD AS220B- DECEMBER 1982 - REVISED DECEMBER 1994 Multiplexed I/O Ports Provide Improved Bit Density Four Modes of Operation: - Hold Store - Shift Right - Shift Left - Load Data
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SN54ALS299,
SN74ALS299
AS220B-
300-mil
SN54ALS299.
SN74ALS299.
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PDF
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