QD41
Abstract: BYX97-300
Text: BYX97 SERIES M A INTENANCE TYPE iILIPS INTERNATIONAL T> SbE I 7I10a5b DD41bSfi bll BIPHIN T -O l~ t RECTIFIER DIODES Also available to B S 9331-F130 Silicon rectifier diodes in metal envelopes similar to DO -5, intended fo r use in power rectifier applications.
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OCR Scan
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BYX97
7I10a5b
DD41bSfi
9331-F130
1600R
BYX97
711005bi_
711D0Eb
QD41
BYX97-300
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Untitled
Abstract: No abstract text available
Text: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D20120D
O-247-3
C4D20120D
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C4D10120
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D10120D
O-247-3
O-24planted
C4D10120A
C4D10120
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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sk832
Abstract: SK821 SK841 SK993 SK3110 SK9975 SK952 SK9105 sk9154 SK9709
Text: THOnSON/ DISTRIBUTOR SñE D • T02t,ñ73 Q D O M T O 1! 3T4 ■ TCSK Diode Arrays Maxim um Ratings R epetitive Forw ard C urrent Peak Reverse TCE Type M a terial Voltage A verage Vr h m lo A V SK3110 SK7332 35 6000 Se Si Forw ard Voltage Reverse Outline D rop, DC
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OCR Scan
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SK3110
SK7332
100mA
R-021
R-069
SK10180
R-117
SK10181
SK10182
sk832
SK821
SK841
SK993
SK9975
SK952
SK9105
sk9154
SK9709
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irf2807 equivalent
Abstract: No abstract text available
Text: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1
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OCR Scan
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IRFI2807
T0-220
irf2807 equivalent
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0050II
Abstract: MO-15 72RD mosfet ir 840
Text: PD -91848B International Rectifier IHR IRLMS6802 HEXFET Power MOSFET • • • • Ultra Low On-Resistance P-Channel M O SFET Surface Mount Available in Tape & Reel dŒ V d s s = -2 0 V -Ds RDS on = 0.050ÎÎ T op V ie w Description These P-Channel MOSFETs from International Rectifier
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OCR Scan
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-91848B
IRLMS6802
OT-23.
0050II
MO-15
72RD
mosfet ir 840
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2D 1002 diode
Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Text: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier
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OCR Scan
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OT-23.
EIA-S41.
2D 1002 diode
SMD MARKING CODE 9b 2b
smd diode marking LM
smd 2d 1002 -reel
S57C3
sot-23 Marking 3D
Switching Diode SOT23 Marking 3D
smd 2d 1002
S1902
diode Marking Code lm
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/503E
MIL-PRF-19500/503D
1N6073
1N6081,
MIL-PRF-19500.
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Untitled
Abstract: No abstract text available
Text: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature
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OCR Scan
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IRFI1310G
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bc 331
Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
Text: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier
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OCR Scan
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PD-93759
IRLMS4502
OT-23.
EIA-481
EIA-541.
bc 331
mosfet ir 840
irlms4502
P 838 X MOSFET
diode marking code YF
IRLMS5703
IRLMS6702
Micro6 Package
marking JB diode
D 042 silicon rectifier diode
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IRLMS6803
Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance
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IRLMS1503PbF
leadframe01
EIA-481
EIA-541.
IRLMS6803
IRLMS1902
IRLMS2002
IRLMS4502
IRLMS5703
IRLMS6702
58AV
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IRLMS6803
Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802 6x marking sot-23 p-channel
Text: PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D D 1 6 D 2 5 D G 3 4 S VDSS = -20V RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier
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IRLMS6802PbF
OT-23.
EIA-481
EIA-541.
IRLMS6803
IRLMS1503
IRLMS1902
IRLMS5703
IRLMS6702
IRLMS6802
6x marking sot-23 p-channel
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IRLMS6803
Abstract: EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet
Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
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IRLMS1902PbF
EIA-481
EIA-541.
IRLMS6803
EIA-541
IRLMS1503
IRLMS2002
mosfet 4502
5703 mosfet
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IRFz48N MOSFET
Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFz48N MOSFET
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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B1370
Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
B1370
R B1370
IRFz44n equivalent
MOSFET IRFZ44N
for irfz44n
IRF1010 MOSFET TO-220
IRFIZ44N
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IRFIZ44N equivalent
Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
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IRFIZ44N
IRFIZ44N equivalent
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
IRFz44n equivalent
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IRFIZ48N
Abstract: IRF1010 IRFI840G IRFZ48N
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFIZ48N
IRF1010
IRFI840G
IRFZ48N
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IRFz44n equivalent
Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840
Text: PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.024Ω G ID = 28A S Description
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IRFIZ44N
O-220
IRFz44n equivalent
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
12v input 55v output using irfz44n circuit
IRFZ44
IRFIZ44N equivalent
irfi840
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IRFz44n equivalent
Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
IRFz44n equivalent
datasheet of irfz44n
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
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SHARP IR3
Abstract: 1N5186 1N5187 1N5188 1N5190
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2007. INCH-POUND MIL-PRF-19500/424B 18 October 2006 SUPERSEDING MIL-S-19500/424A 29 May 1995 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/424B
MIL-S-19500/424A
1N5186,
1N5187,
1N5188,
1N5190,
MIL-PRF-19500/411
MIL-PRF-19500.
SHARP IR3
1N5186
1N5187
1N5188
1N5190
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IRFI840G
Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Text: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω
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1306B
IRFIZ46N
O-220
IRFI840G
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
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marking 34A
Abstract: IRFI840G IRL3103 IRLI3103
Text: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description
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IRLI3103
O-220
marking 34A
IRFI840G
IRL3103
IRLI3103
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