Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM3S1651 Microcontroller D ATA SHE E T D S -LM 3S 1651 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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LM3S1651
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Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM3S1651 Microcontroller D ATA SHE E T D S -LM 3S 1651 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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LM3S1651
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Siren Sound Generator
Abstract: L9938
Text: TE X AS I NS TRUM E NTS - ADVANCE I NFO RMAT ION Stellaris LM3S1651 Microcontroller D ATA SH E E T D S -LM 3S 1651 - 9 5 3 8 C opyri ght 2007-2011 Texas Instruments Incor porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments
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LM3S1651
Siren Sound Generator
L9938
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PSR 154
Abstract: ti 829
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM3S1651 Microcontroller D ATA SH E E T D S -LM 3S 1651 - 8 8 3 2 C opyri ght 2007-2010 Texas Instruments Incorporated Copyright Copyright © 2007-2010 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments
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LM3S1651
PSR 154
ti 829
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Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM3S1651 Microcontroller D ATA SH E E T D S -LM 3S 1651 - 7 2 9 9 C opyri ght 2007-2010 Texas Instruments Incorporated Copyright Copyright © 2007-2010 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - ADVANCE I NFO RMAT ION Stellaris LM3S1651 Microcontroller D ATA SH E E T D S -LM 3S 1651 - 9 5 3 8 C opyri ght 2007-2011 Texas Instruments Incor porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments
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BUT98
Abstract: No abstract text available
Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1651 Microcontroller D ATA SHE E T D S -LM3S 1651 - 1 3 4 4 2 . 2 5 4 9 S P M S 220K C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated
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BUT98
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ISO 7816 smartcard
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1651 Microcontroller D ATA SHE E T D S -LM3S 1651 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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ISO 7816 smartcard
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Untitled
Abstract: No abstract text available
Text: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1651 Microcontroller DATA SH E E T DS - LM 3S 1651 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1651 Microcontroller D ATA SHE E T D S -LM3S 1651 - 1 5 8 5 2 . 2 7 4 3 S P M S 220L C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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d 1651c
Abstract: 1651E 1651C
Text: 19-0305; Rev 1; 7/95 JVWYXAJVX 5 V /3 .3 V or Adjustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers G eneral Description Features ♦ More than 90% Efficiency 10mA to 1.5A Loads A high switching frequency (up to 300kHz) allows these devices to use m iniature external com ponents.
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500mA
100pA
MAX1649)
MAX1651)
300kHz
MAX1649/MAXI
1649/M
649/M
d 1651c
1651E
1651C
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Untitled
Abstract: No abstract text available
Text: 19- 0305 ; Rev 2: 9/95 JVW YXAJSn 5 V I3 .3 V or A djustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers _ G e n e ra l D e s c rip tio n F e a tu re s ♦ More than 90% Efficiency 10mA to 1.5A Loads ♦ More than 12.5W Output Power
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1649/M
649/MAXI
300mV
DD13144
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Untitled
Abstract: No abstract text available
Text: 19-0305. RevO, 9/94 JV \Æ X A JV \ 5 V /3 .3 V or Adjustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers A high switching frequency up to 300kHz allows these devices to use miniature external components. The MAX 1649/MAX 1651 have dropout voltages less
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300kHz)
1649/MAX
500mA
MAX1649)
MAX1651)
500mA
0010S
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2sc1651
Abstract: No abstract text available
Text: 2SC1651 O f i d f t C ^ f c l H M i £ 5 i 7 0U - ^ N P N v U = i > h 7 > y X i ? is jiiE E ^ S iit e f f l/H ig h Voltage Amp. Triple Diffusied NPN Silicon Transistor • yfffivn sm /D in ien sio n s U n it: mm 1) V CER = 2 1 0 V t m i f f i T ' & 5 o
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2SC1651
2SC1651
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JOHANSON 2951
Abstract: MRF5174 IR 21025 8ASF U028
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 2W - 4 0 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON .d e s ig n e d prim arily for w ideband large-signal driver and pre driver am plifier stages in the 2 6 0 -6 0 0 M H z frequency range.
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MRF654
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.
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MRF654
MRF654
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BH Rf transistor
Abstract: mrf1150m
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.
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1150M
MRF1150M
BH Rf transistor
mrf1150m
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MRF5175 transistor
Abstract: MRF5175 transistor 2sc 546
Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver
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MRF5175
28-Volt,
400-M
T-33-05
MRF5175 transistor
MRF5175
transistor 2sc 546
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D 1652 transistor
Abstract: transistor b 1655
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP80N06LT, PHB80N06LT SYMBOL FEATURES QUICK REFERENCE DATA V,DSS ~ 55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics
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PHP80N06LT,
PHB80N06LT
PHPB0N06LT
T0220AB)
D 1652 transistor
transistor b 1655
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2N1652
Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de
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MIL-S-19500/219A
mil-S-19500/219
2N1651,
2N1652,
2N1653
Ic-25A
2N1652
2N1653
MIL-STD-780
2N1651
Germanium power
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2SA874
Abstract: 2SC1631 EP-403
Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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30/unit
150/unit
2SA874
2SC1631
EP-403
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exclusive or pin diagram cd4030
Abstract: CD4030 ci cd4030 CD4030C CD4030CJ CD4030CN CD4030M CD4030MJ CD4030MN J14A
Text: February 1988 CD4030M/CD4030C Quad EXCLUSIVE-OR Gate General Description Applications The EXCLUSIVE-OR gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and Pchannel enhancement mode transistors. All inputs are pro tected against static discharge with diodes to VDD and Vgg.
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CD4030M/CD4030C
exclusive or pin diagram cd4030
CD4030
ci cd4030
CD4030C
CD4030CJ
CD4030CN
CD4030M
CD4030MJ
CD4030MN
J14A
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BU508 TRANSISTOR equivalent
Abstract: BU508 equivalent BU508 TRANSISTOR specification BU508 BU508A equivalent bu508d equivalent BU508A TRANSISTOR equivalent 4229P-L00-3C8 BU508A BU508 CIRCUITS
Text: MOTOROLA SC XSTRS/R F 12E D | b3b7aSM QGflMfll? 3 | MOTOROLA SEM ICONDUCTOR TECHNICAL DATA BU508 BU508D BU508A BU508AD NPIM Silicon Power Transistors Horizontal Deflection . . . specifically designed for use in large screen color deflection circuits. • Glass Passivated Patented Photoglass
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b3b72S4
O-218
O-218AC
BU508 TRANSISTOR equivalent
BU508 equivalent
BU508 TRANSISTOR specification
BU508
BU508A equivalent
bu508d equivalent
BU508A TRANSISTOR equivalent
4229P-L00-3C8
BU508A
BU508 CIRCUITS
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QRB1113
Abstract: QRB1114
Text: [*Q REFLECTIVE OBJECT SENSOR! QPTOELECTRQHICS QRB1113/11K DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared em itting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/11K
QRB1113
QRB1114
ST2179
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