component data
Abstract: smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards
Text: VT-WIN PRINTED CIRCUIT BOARD INSPECTION SYSTEM Fully Automated And Integrated High-Speed, In-Line PCB Inspection and Verification System The increasing density and quality requirements of PCBs and intense manufacturing competition leave little room for error.To stay ahead of competition, maximize your resources
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9/98/10M
component data
smema
smema specifications
automatic room light control with program
QFP lead pitch 0.3mm
Ricoh 2205
ups 3KVA boards
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16c72a
Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
16c72a
5v power supply using lm7805 with bridge rectifier
393f
AN701
A 393F
inductor 100uH
p16c72a
28E8
1uf/35v
3C50
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16c72a
Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
DS00701A-page
16c72a
P16C72A
1F04
AN701
5v power supply using lm7805 with bridge rectifier
5V power supply using LM7805 and bridge rectifier
scl 1003
28E4
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AO4490
Abstract: TA10S
Text: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)
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AO4490
AO4490/L
AO4490L
-AO4490L
AO4490
TA10S
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Untitled
Abstract: No abstract text available
Text: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)
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AO4490
AO4490
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16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
D-81739
16c72a
DS275
P16C72A
16C72
1uf/35v
A 393F
buck converter with dsPIC
KI 78L05
PID control dsPIC
PID control dsPIC DC motor
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AOL1424
Abstract: No abstract text available
Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD
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AOL1424
AOL1424
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radiator
Abstract: RCA1C09
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575
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2N5578
2N5575
2N5578*
2N5786
O-39/TO-205MD
O-5/TO-205MA
2N5785
2N5784
2ISI6103
radiator
RCA1C09
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AOL1424
Abstract: No abstract text available
Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD
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AOL1424
AOL1424
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Untitled
Abstract: No abstract text available
Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD
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AOL1424
AOL1424
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rca1a10
Abstract: 2N3439 complementary BFT28B RCS88 2N5415
Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E
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O-204M
2N5840
BUX16C
RCA413
RCA1B04
RCA1B05
2N5415
2N3439
rca1a10
2N3439 complementary
BFT28B
RCS88
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RCA1E02
Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Text: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«
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10Wma:
2N3440«
2N406440390"
2N3439*
2N406340385AUDIO
RCA1A15
RCA1A09
RCA1A11
RCA1E02
40327
205MD
2N406
RCA 40313
40318 RCA
rca+40412
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PC9203
Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439
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PC44E
PC44H
PC2102
PC3439
PC3442
PC3585
PC3879
PC4036*
PC5038
PC5240
PC9203
PC638
PC6079
PC5671
PC160-1
PC9166
PC5303
C6650
PC9202
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bta 05
Abstract: BTA05
Text: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05
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Q68000-A3430
Q68000-A3428
OT-23
EHP00816
bta 05
BTA05
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm PO W ER AM PLIFIER APPLICATIONS I 15.8 + 0.5 i • C o m plem entary to 2SA 1803 • Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. M A XIM U M RATINGS Ta = 25°C
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2SC4688
961001EAA2'
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2SC2021
Abstract: No abstract text available
Text: h ~ 7 > y X £ /T ran sisto rs 2SC2021 2SC4038 2SC2021 /2SC4038 H K 'M W M W B / G e n e r a l Small Signal Amp. Epitaxial Planar NPN Silicon Transistors i ÿJ.Jg Tj-^ @ /D im en sio n s Unit : mm • 1) V ce (satj^O.CMV (at 10mA) £•(S .l,'0 2) C o b = 2 .0 p F t ^ 'o
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2SC2021
/2SC4038
2SC4038
2SA937,
2SA1561
2SA1561.
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D1226M
Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1
Text: h - 7 > p ' Z £ /Transistors ROHM CO 2SD1226M/2SD1859 LT» MQE D • 7 ö 2 ß ci*:J c] 0 D G S 0 3 Ö 3 H R HM 2SD1226M Xt°^df-vT;U70U-^NPN yU3>h7>y'X^ Power Amp. 2SD1359 Epitaxial Planar NPN Silicon Transistors 7 ^ 2 7 -2 .1 • $ Ä • W F i't'sÉ E i/D im e n sio n s Unit : mm
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2SD1226M/2SD1859
D1226M
700mA
2SB910M/2SB12381
2SD1226M
2SD1859
700mA
2SB910M,
2SB1238.
D1226
T2721
2SD1226M
2SB1238
2SD1859
251C
2SB910M
L0oa
80-V1
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b0615
Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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--25C
BD618,
Q62702-D946
Q62702-D948
Q62702-D950
Q62702-D952
Q62702-D954
611/BD
613/BD
S250C
b0615
b0613
bo 615
8 HJC
bd 426
BD 615 transistors
q62702
BD PNP
siemens 611
b0617
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2SA1803
Abstract: 2SC4688
Text: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -
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2SC4688
2SA1803
2-16F1A
961001EAA2'
2SA1803
2SC4688
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX4ND40E
PHX4ND40E
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D1803
Abstract: transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 2SB1203 NPN S2e d1803 transistor
Text: SA NY O S E M I C O N D U C T O R 2SB1203, 2SD1803 CORP TWOTb SSE D OdOTnG 3 T - 3 3 -IR T -3 3 • ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2 04 4 High-Current Switching Applications 2085B A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications
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2SB1203,
2SD1803
T-33-O^
20S5B
2SB1203/2SD1803-applied
2SB1203
D1803
transistor d1803
Transistor 2SB1203
IC D1803
pa 2030a
CAW 04 22E
SD1803
NPN S2e
d1803 transistor
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service-mitteilungen
Abstract: elektronik DDR rema- radio sowjetische transistoren rema andante T8924 ddr veb servicemitteilungen Sonneberg GER-A
Text: SERVICE-MITTEILUNGEN V E B IN DUSTRIEVERTRIEB R U ND FU NK UND F E RN SE H EN I Ir a d i o -television AUSGABE: DEZEMBER t iW ir Noah bl« Sud« 1974- wird der neu« sowjetische yarbfernsehempfänger "Raduga 706" in den Handel kommen. Dieser Empfänger Belohnet siob duroh zahlreiohe Verbesserungen
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II1/18/379
service-mitteilungen
elektronik DDR
rema- radio
sowjetische transistoren
rema andante
T8924
ddr veb
servicemitteilungen
Sonneberg
GER-A
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BLX91A
Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Text: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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tbS3T31
001403t.
BLX91A
BLX91A
BLX91
R33F
0180
capacitor de polyester MHA
IEC134
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26-13 transistor sot-23
Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages
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MA4T6365XX
MA4T636535
MA4T636539
OT-143
26-13 transistor sot-23
micro X
Silicon Bipolar Transistor Micro-X Ceramic
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