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    D 1803 TRANSISTOR Search Results

    D 1803 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 1803 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    component data

    Abstract: smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards
    Text: VT-WIN PRINTED CIRCUIT BOARD INSPECTION SYSTEM Fully Automated And Integrated High-Speed, In-Line PCB Inspection and Verification System The increasing density and quality requirements of PCBs and intense manufacturing competition leave little room for error.To stay ahead of competition, maximize your resources


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    PDF 9/98/10M component data smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards

    16c72a

    Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
    Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:


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    PDF AN701 PIC16C72A PIC16C72A PIC16C72 16c72a 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50

    16c72a

    Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
    Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:


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    PDF AN701 PIC16C72A PIC16C72A PIC16C72 DS00701A-page 16c72a P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4

    AO4490

    Abstract: TA10S
    Text: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)


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    PDF AO4490 AO4490/L AO4490L -AO4490L AO4490 TA10S

    Untitled

    Abstract: No abstract text available
    Text: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX)


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    PDF AO4490 AO4490

    16c72a

    Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
    Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:


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    PDF AN701 PIC16C72A PIC16C72A PIC16C72 D-81739 16c72a DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor

    AOL1424

    Abstract: No abstract text available
    Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


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    PDF AOL1424 AOL1424

    radiator

    Abstract: RCA1C09
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575


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    PDF 2N5578 2N5575 2N5578* 2N5786 O-39/TO-205MD O-5/TO-205MA 2N5785 2N5784 2ISI6103 radiator RCA1C09

    AOL1424

    Abstract: No abstract text available
    Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


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    PDF AOL1424 AOL1424

    Untitled

    Abstract: No abstract text available
    Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


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    PDF AOL1424 AOL1424

    rca1a10

    Abstract: 2N3439 complementary BFT28B RCS88 2N5415
    Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E


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    PDF O-204M 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 2N5415 2N3439 rca1a10 2N3439 complementary BFT28B RCS88

    RCA1E02

    Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
    Text: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«


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    PDF 10Wma: 2N3440« 2N406440390" 2N3439* 2N406340385AUDIO RCA1A15 RCA1A09 RCA1A11 RCA1E02 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412

    PC9203

    Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
    Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439


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    PDF PC44E PC44H PC2102 PC3439 PC3442 PC3585 PC3879 PC4036* PC5038 PC5240 PC9203 PC638 PC6079 PC5671 PC160-1 PC9166 PC5303 C6650 PC9202

    bta 05

    Abstract: BTA05
    Text: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05


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    PDF Q68000-A3430 Q68000-A3428 OT-23 EHP00816 bta 05 BTA05

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm PO W ER AM PLIFIER APPLICATIONS I 15.8 + 0.5 i • C o m plem entary to 2SA 1803 • Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. M A XIM U M RATINGS Ta = 25°C


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    PDF 2SC4688 961001EAA2'

    2SC2021

    Abstract: No abstract text available
    Text: h ~ 7 > y X £ /T ran sisto rs 2SC2021 2SC4038 2SC2021 /2SC4038 H K 'M W M W B / G e n e r a l Small Signal Amp. Epitaxial Planar NPN Silicon Transistors i ÿJ.Jg Tj-^ @ /D im en sio n s Unit : mm • 1) V ce (satj^O.CMV (at 10mA) £•(S .l,'0 2) C o b = 2 .0 p F t ^ 'o


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    PDF 2SC2021 /2SC4038 2SC4038 2SA937, 2SA1561 2SA1561.

    D1226M

    Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1
    Text: h - 7 > p ' Z £ /Transistors ROHM CO 2SD1226M/2SD1859 LT» MQE D • 7 ö 2 ß ci*:J c] 0 D G S 0 3 Ö 3 H R HM 2SD1226M Xt°^df-vT;U70U-^NPN yU3>h7>y'X^ Power Amp. 2SD1359 Epitaxial Planar NPN Silicon Transistors 7 ^ 2 7 -2 .1 • $ Ä • W F i't'sÉ E i/D im e n sio n s Unit : mm


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    PDF 2SD1226M/2SD1859 D1226M 700mA 2SB910M/2SB12381 2SD1226M 2SD1859 700mA 2SB910M, 2SB1238. D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1

    b0615

    Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


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    PDF --25C BD618, Q62702-D946 Q62702-D948 Q62702-D950 Q62702-D952 Q62702-D954 611/BD 613/BD S250C b0615 b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617

    2SA1803

    Abstract: 2SC4688
    Text: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -


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    PDF 2SC4688 2SA1803 2-16F1A 961001EAA2' 2SA1803 2SC4688

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


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    PDF PHX4ND40E PHX4ND40E

    D1803

    Abstract: transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 2SB1203 NPN S2e d1803 transistor
    Text: SA NY O S E M I C O N D U C T O R 2SB1203, 2SD1803 CORP TWOTb SSE D OdOTnG 3 T - 3 3 -IR T -3 3 • ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2 04 4 High-Current Switching Applications 2085B A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications


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    PDF 2SB1203, 2SD1803 T-33-O^ 20S5B 2SB1203/2SD1803-applied 2SB1203 D1803 transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 NPN S2e d1803 transistor

    service-mitteilungen

    Abstract: elektronik DDR rema- radio sowjetische transistoren rema andante T8924 ddr veb servicemitteilungen Sonneberg GER-A
    Text: SERVICE-MITTEILUNGEN V E B IN DUSTRIEVERTRIEB R U ND FU NK UND F E RN SE H EN I Ir a d i o -television AUSGABE: DEZEMBER t iW ir Noah bl« Sud« 1974- wird der neu« sowjetische yarbfernsehempfänger "Raduga 706" in den Handel kommen. Dieser Empfänger Belohnet siob duroh zahlreiohe Verbesserungen


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    PDF II1/18/379 service-mitteilungen elektronik DDR rema- radio sowjetische transistoren rema andante T8924 ddr veb servicemitteilungen Sonneberg GER-A

    BLX91A

    Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
    Text: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    PDF tbS3T31 001403t. BLX91A BLX91A BLX91 R33F 0180 capacitor de polyester MHA IEC134

    26-13 transistor sot-23

    Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
    Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages


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    PDF MA4T6365XX MA4T636535 MA4T636539 OT-143 26-13 transistor sot-23 micro X Silicon Bipolar Transistor Micro-X Ceramic