D 317 P 2N TRANSISTOR Search Results

D 317 P 2N TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

D 317 P 2N TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TFK 404 Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317	OCR Scan	20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09	PDF
transistor BC 310 Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor	PDF
Untitled Abstract: No abstract text available Text: • 43D2H71 0053722 bOfl HAS 2N 6759 2N 6760 fü HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistors A u g u st 1991 Features Package T 0 -2 0 4 A A B O T T O M VIEW • 4.5A and 5.5A, 350V - 400V • r0s on - 1-0 ^ and 1-Sfi SOURCE • SOA is Power-Dissipation Limited	OCR Scan	43D2H71 D05372S	PDF
BSY39 Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent Text: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A	OCR Scan	2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 BSY51 2N2218 BSY39 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent	PDF
equivalent transistor 2N1711 Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns	OCR Scan	2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708	PDF
3771- IC Abstract: 2N3772 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2N 3772 High Power NPN Silicon Power Transistors ‘Motorola Prefarrad Davie« . designed for linear amplifiers, series pass regulators, and inductive switching applications. • Forward Biased Second Breakdown Current Capability	OCR Scan	2N3771 2N3772 3771- IC 2N3772 motorola	PDF
transistor bc 488 Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B	PDF
2N1711 MOTOROLA Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency	OCR Scan	SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent	PDF
equivalent transistor 2N1711 Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF	OCR Scan	2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR	PDF
2N3442 Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20 Text: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«	OCR Scan	CB-19 2N3442 Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20	PDF
874-D20 Abstract: 874-LA 2N5179 874-WN3 16AWG wire Text: 2N 5179 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR , TR A N S IS T O R N P N S IL IC IU M P L A N A R E P IT A X IA L Low noise tuned amplifiers UHF converters Oscillators up to 500 MHz A m p lific a te u rs accordés fa ib le b r u it Convertisseurs U H F O scillateurs ju s q u 'à 5 0 0 M H z	OCR Scan	16AWG 874-LA 874-D20 874-LA 2N5179 874-WN3 16AWG wire	PDF
EQUIVALENT TRANSISTOR bc109c Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB	OCR Scan	2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 25E D -r r \ bfeS3131 0Q173T4 □ • ■ 2N2218 r - a v - i? SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-39 metal envelope w ith the collector connected to the case. They are primarily intended fo r high speed switching. The 2N2218 is especially suitable fo r DC and VHF/UHF	OCR Scan	bfeS3131 0Q173T4 2N2218 2N2218 00173Tb T-27-19	PDF
transistor 2n2218 Abstract: 2N2218 Text: ri N AMER PHILIPS/DISCRETE aSE D 1^53=131 G0173TM 0 • ■ 2N2218 T-27-J? SILICON PLANAR EPITAXIAL TRANSISTOR N PN transistors in a T O -3 9 metal envelope w ith the collector connected to the case. T hey are ampNfiersinterlded f° r h'9h SP6ed SWitchin9, T he	OCR Scan	GQ173T4 2N2218 T-27-1? T-27-19 transistor 2n2218	PDF

2N2369A Abstract: 2n4449 Text: SEMICONUUU I UK TECHNICAL DATA 2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications M A X IM U M R A T IN G S Rating Symbol	OCR Scan	2N2369AJAN, 2N3227JAN, 2N4449JAN, MIL-S-19500/317 2N2369A 2N3227 2N4449 2N4449JAN 2N2369A,	PDF
1N5411 Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal	OCR Scan	CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756	PDF
2N4150 Abstract: NS2N Text: General ^ ^ Semiconductor ^ Industries, Inc. 2N4150 NPN SILICON HIGH POWER T R A N SIST O R S D IFFU SED S ILIC O N PLANAR PA SSIVATED TR A N SISTO R S These devices are designed for use in high current sw itching applications. The latest technologies are used to offer the highest degree of re lia bility. JAN /JA N TX 2N4150	OCR Scan	2N4150 2N4150 MIL-S-19500/394 NS2N	PDF
Sick WL Abstract: transistor bc 132 PL plug diagram PI-35 TRANSISTOR BC 135 sick optic transistor bc 630 Text: WL 18-2 32.5 Scanning range 7m Features: # Red-light em itter LED as align-ment aid # Polarization filter allowing detec tion o f objects w ith reflective surfaces # . T l\|J 22 Contamination control and alignment aid by means o f flashing LED signal strength indicator	OCR Scan		PDF
2N5735 Abstract: 2sc113 BSW12 2N3400 2N2943 SFT713 u34c 2n1675 2n2718 2N5242 Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Typ e + — Revised Specifications # Non-JEDE C type m anufactured outside u :s . a . t Switching type, also listed in Section 12	OCR Scan	diff03# BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A 2N5735 2sc113 BSW12 2N3400 2N2943 SFT713 u34c 2n1675 2n2718 2N5242	PDF
2P430 Abstract: 2P43 Text: WT 18-2 32.5 Adjustable scanning distance 57.4 50 . 6 0 0 m m F e atu re s: • Red-light e m itter LED as align ment aid • Infinitely adjustable scanning distance • Background suppression • Contamination control and alignment aid by means o f flashing	OCR Scan	-2P430 2P430 2P43	PDF
FRF9450H Abstract: No abstract text available Text: HA RR IS SEF1IC0ND S E CT OR HARRIS S E M I C O N D U C T O R HARRIS RCA GE 40E D O BJECTIVE 4 3 Ü 2 2 7 1 0G3364fl T H I H A S 2 N 7 3 2 7 R , 2N 7327H REGISTRATION PENDING Available As FRF9450R, FRF9450H INTERSIL -r^ o ' “ O 'n - O 5A- - 500V RDS on =1.82n	OCR Scan	0G3364fl 7327H FRF9450R, FRF9450H FRF9450H	PDF
triac LT 5220 Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716 Text: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)	OCR Scan	041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716	PDF
2N2216 Abstract: 2N5735 BSW12 2n1675 2sc113 Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol	OCR Scan		PDF
dm-58 Abstract: 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226 Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	B170024 4000n dm-58 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226	PDF

D 317 P 2N TRANSISTOR Search Results

D 317 P 2N TRANSISTOR Result Highlights (5)

D 317 P 2N TRANSISTOR Datasheets Context Search

TFK 404

transistor BC 310

Untitled

BSY39

equivalent transistor 2N1711

3771- IC

transistor bc 488

2N1711 MOTOROLA

equivalent transistor 2N1711

2N3442

874-D20

EQUIVALENT TRANSISTOR bc109c

Untitled

transistor 2n2218

2N2369A

1N5411

2N4150

Sick WL

2N5735

2P430

FRF9450H

triac LT 5220

2N2216

dm-58