D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400HG-130H IC ……………………… 400 A
|
Original
|
PDF
|
CM400HG-130H
HVM-1045-A
000A/Â
D 400 F 6 F BIPOLAR TRANSISTOR
|
MT 2800 N
Abstract: D 1062 transistor CM800HG-90R
Text: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………
|
Original
|
PDF
|
CM800HG-90R
HVM-1062
MT 2800 N
D 1062 transistor
CM800HG-90R
|
D 1062 transistor
Abstract: HVM-1062
Text: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY
|
Original
|
PDF
|
CM800HG-90R
HVM-1062
D 1062 transistor
HVM-1062
|
BUK854-800 applications
Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
|
Original
|
PDF
|
O220AB
BUK854-800 applications
BUK854-800 datasheet
BUK854-800
BUK854-800A
transistor igbt
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………
|
Original
|
PDF
|
24-Feb
CM400E2G-130H
HVM-1048-B
000A/Â
|
CM400E4G-130H
Abstract: cm400e2
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………
|
Original
|
PDF
|
24-Feb
CM400E4G-130H
HVM-1049-B
CM400E4G-130H
cm400e2
|
BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
|
OCR Scan
|
PDF
|
OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
|
10N50A
Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Text: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode
|
OCR Scan
|
PDF
|
IGTH10N40D,
IGTH10N40AD,
IGTH10N50D,
IGTH10N50AD
IGTH10N50AD
2CS-42
10N50A
10n400
10N40
AN7264
10N50AD
20n50
10N50D
10n5
IGTH10N50D
IGTH10N40D
|
20/IGBT FF 450
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in
|
OCR Scan
|
PDF
|
O220AB
BUK856-450IX
20/IGBT FF 450
|
LN-200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork The BUD44D2 is state-of-art High Speed High gain BIPolar transistor H2BIP .
|
OCR Scan
|
PDF
|
BUD44D2
BUD44D2
L-200
LN-200
|
BUK856-450IX
Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j
Text: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _
|
OCR Scan
|
PDF
|
0D3CH11
BUK856-450IX
T0220AB
BUK856-450IX
zener diode f7
BUK856
transistor r 606 j
|
transistor bh ra
Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
Text: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a
|
OCR Scan
|
PDF
|
BUK856-800A
T0220AB
transistor bh ra
WE VQE 24 E
D 400 F 6 F BIPOLAR TRANSISTOR
WE VQE 11 E
BUK856-800A
M 615 transistor
|
MRF660
Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Text: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor
|
OCR Scan
|
PDF
|
i0fi70
O-254AA
MHM5N100HX,
MHM12N50HX,
MHM25N20HX,
MHM25N10HX,
MHQ3468HX,
MQ3468HX,
MHQ4261HX,
MQ4261HX,
MRF660
MHQ6002HX
MHM25N20HX
MBR5825
MRF5160
MM3227H
MHM12N50HX
MBR5825H
MM3227
mrf522
|
5N602
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
|
OCR Scan
|
PDF
|
BUK856-400IZ
T0220AB
BUK856-400IZ
5N602
|
|
|
BUK854-800A
Abstract: T0220AB
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
BUK854-800A
T0220AB
T0220AB;
T0220
BUK854-800A
T0220AB
|
PJ 986
Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
Text: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs
|
OCR Scan
|
PDF
|
IGTH20N4QD,
IGTH20N40AD,
IGTH20N50D,
IGTH20N50AD
IGTH20N40D,
IGTH20N50AD
PJ 986
pj 986 diode
20N50A
pj 809
20n50
IGTH20N40D
20N40
20N50D
IGTH20N40AD
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
|
OCR Scan
|
PDF
|
BUK866-400
|
D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
|
OCR Scan
|
PDF
|
BUK866-400IZ
300us)
D 400 F 6 F BIPOLAR TRANSISTOR
|
TRANSISTOR 434
Abstract: BUK856-450IX mj power transistor IEC134 T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)
|
OCR Scan
|
PDF
|
7110fiSt.
BUK856-450IX
T0220AB
TRANSISTOR 434
mj power transistor
IEC134
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
htjS3T31
O220AB
BUK854-800A
bbS3831
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk
|
OCR Scan
|
PDF
|
BUL45D2/D
BUL45D2
21A-06
O-220AB
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .
|
OCR Scan
|
PDF
|
BUD44D2
St254
MTP8P10
500nH
|
OL35
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork
|
OCR Scan
|
PDF
|
MJE18004D2
MJE18004D2
OL35
|
BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
|
OCR Scan
|
PDF
|
BUK856-450IX
T0220AB
BUK856-450IX
|
