powertrain controller
Abstract: ecu sensors capacitor 685 35K MC33394 SW11 capacitor chip 685 35K
Text: MOTOROLA Order Number: MC33394/D Rev. 0, 06/2001 SEMICONDUCTOR TECHNICAL DATA Advance Information PowerOak MC33394 MCU Companion — Voltage Regulators + CAN Transceiver + Reset 44–Lead HSOP Plastic Package 1291–01 44–Lead QFN Plastic Package 1310–01
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MC33394/D
MC33394
powertrain controller
ecu sensors
capacitor 685 35K
MC33394
SW11
capacitor chip 685 35K
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Untitled
Abstract: No abstract text available
Text: Si4840/44-DEMO Si4840/44 D EMO B OARD U SER ’ S G UIDE 1. Features ATDD analog tune and digital display FM/AM/SW radio Worldwide FM band support from 64 to 109 MHz with 5 default sub-bands: FM1 FM2 FM3 FM4 FM5
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Si4840/44-DEMO
Si4840/44
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NCP4115
Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
Text: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W
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SGD503/D
NCP1450
NCP1550
CS5211
CS5212
NCP1570
NCP1571
200ve
r14525
ONS80126-10
NCP4115
NCP4100
200v npn 3a d2pak
Bipolar Power Transistor Data
400V igbt dc to dc buck converter
12V to 300V dc dc converter step-up
NCP1650
NCP1204
DL135
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74C10
Abstract: 7107 SC7107 SC7106 VSC7107 CD4023 9a240
Text: SC7106/7107 33/4 SC7106 LCD 3620- SC7107 A/D A/D SC7106 LCD SC7107 SC7106 DIP-40-600-2.54 LED SC7107 10µV 1µV/°C 10pA QFP-44-10 x10-0.8 LCD SC7106 * * 1pA * LCD SC7106 LED * SC7107 15µVp-p * * 10mW * °C SC7106CPL 0~70 DIP-40-600-2.54 SC7106RCPL 0~70
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SC7106/7107
SC7106
SC7107
DIP-40-600-2
QFP-44-10
x10-0
74C10
7107
SC7107
SC7106
VSC7107
CD4023
9a240
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diode zener c25
Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32
Text: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to
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Si3034/38/44
Si3034/
IEC1000-4
diode zener c25
diode zener c29
zener DIODE C25
transistor c323
zener diode c18 st
ST transistor c322
z5 zener diode
diode zener c23
diode zener c26
zener diode c32
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES
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BUL44/D
BUL44F*
BUL44/BUL44F
BUL44F
221D-02
O-220
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NPN Transistor isolated T0-220
Abstract: No abstract text available
Text: Order this data sheet by BUL44/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U L 44 B U L 44F Designer’s Data Sheet SW ITCHMODE™ M o to ro la P referre d D e vices NPN Bipolar Power TVansistor For Sw itching Pow er Supply Applications POWER TRANSISTOR 2.0 AMPERES
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BUL44/D
BUL44/BUL44F
T0-220
T0-220
BUL44
21A-06
O-220AB
221D-01
221D-02.
BUL44F
NPN Transistor isolated T0-220
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VTT0842
Abstract: VTT0843 VTT0844
Text: SbE J> 3 D 3D b O *î ÜO D 117b .040" NPN Phototransistors & G VACTEC I VCT V T T 0 8 4 2 , 43, 44 Low Cost Hermetic TO-18 Lensed Pkg E 6 fi'ìS . - 1 PACKAGE DIMENSIONS inch mm 0 $ ( 5 .2 3 )
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OD117b
VTT0842,
VTT0842
VTT0843
VTT0844
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a 933 transistor
Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Text: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •
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BFR90A
711062Li
ON4184)
BFQ51.
a 933 transistor
BFR90A
2912 TRANSISTOR PNP
bfr90A philips
BFQ51
3FR90
mcd001
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XR-M100
Abstract: XR-1488 XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Text: EXAR 3422618 EXAR CORP Tl dË CORP XR-M100 Master-Chip NPN Transistors Chip Size: 176 x 121 mils Small Signal: 137 Total Components: 840 Low Noise: 4 Bonding Pads: 28 Max. Operating Voltage: 20V Medium: 4 Large: 4 PNP Transistors Lateral: 44 Quad Collector: 8
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XR-M100
60kil:
200ii:
450fi:
900fl:
712kfl
XR-1488/1489A
XR-1488
designed568M
XR-1568/XR-1468C
XR-494
XR-1488N
XR-1488P
XR-1489A
XR-1489AN
XR-1489AP
EXAR XR
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Untitled
Abstract: No abstract text available
Text: EXAR 3422618 EXAR CORP Tl dË CORP 91D XR-M100 Master-Chip Chip Size: 176 x 121 mils Total Components: 840 Bonding Pads: 28 Max. Operating Voltage: 20V J BMEEbia NPN Transistors Small Signal: 137 Low Noise: 4 Medium: 4 Large: 4 PNP Transistors Lateral: 44
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XR-M100
XR-1488/1489A
CR-1468/1568
XR-1468/1568
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2N6078
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of
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b3b7255
PL500
2N6077
2N6078
2N6233
2N6234
2N6235
2C6235
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ge d44h11
Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2
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D44H1
D45H1
D44H2
D45H2
D44H4
D45H4
D44H5
D45H5
D44H7
D45H7
ge d44h11
D44* general electric npn to-220
D44Hll
D44H1
D44H2
D44H4
D44H7
D44H8
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LP319
Abstract: IC 74LS00
Text: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA
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1987-REVISED
LM239,
LM339,
LM2901
LP319
IC 74LS00
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BD934
Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.
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BD933;
BD937
BD941
7110fl2b
0043D44
BD934;
BD933
T-33-09
BD937;
BD934
B0937
B0941
B0939
BD941
BD934 philips
IEC134
c 939
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VTT0942
Abstract: VTT0943 VTT0944
Text: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION
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3G30b
VTT0942,
T-41-61
VTT0942
VTT0943
VTT0944
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2SD1322
Abstract: 010of
Text: Power Transistors ^ 3 2 0 5 2 0 0 1 L7 0 0 2 SD1322 b 44 2S D 1322 Package D im ensions S ilicon NPN Triple-D iffused Planar Darlington Type M edium Speed Power S w itching • Features • 3 0 V Z e n e r d io d e b u ilt-in b e t w e e n C a n d B • V e r y s m a ll f lu c t u a t io n in b r e a k d o w n v o l t a g e s
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001L700
2SD1322
001b701
2SD1322
010of
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VTT0942
Abstract: VTT0943 VTT0944
Text: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53
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3G30b0T
GGD1177
VTT0942,
100/iA
50/1A
VTT0942
VTT0943
VTT0944
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2SD1322
Abstract: No abstract text available
Text: P o w e r T ra n s is to rs b T B2 f l 5 2 2SD1322 Q01b700 2SD1322 fc>44 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching • Features • 3 0V Z e n e r d io d e built-in b e tw e e n C and B • V e r y sm a ll flu c tu a tio n in b r e a k d o w n v o lt a g e s
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bTB2fl52
Q01b700
2SD1322
01b701
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buw46
Abstract: BUW45 buw44
Text: 7^2^53? DoaaaMa T • ¡¡fi S C S -T H O M S O N S G S- THOMSON T 3 3-iS BUW 44/B U W 45 BUW46 3QE D HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTION The BUW44, BUW45 and BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high
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BUW46
BUW44,
BUW45
BUW46
45/BU
44/BUW
45/BUW
buw44
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure
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AT-60111
AT-60211
AT-60111:
AT-60211:
OT-143
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44E SOT-23
Abstract: SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp BC846 marking 1Gp BC846B BC847 BC847B
Text: •I b bS 3 lì31 GQ24M53 *44^ HIAPX N AUER PHILIPS/DISCRETE B C 846 BC847 BC848 fc.7E 1> 7 V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A Collector-emitter voltage {V g g = 0
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GQ24453
BC846
BC847
BC848
OT-23
BC846
BC847
35MHz
44E SOT-23
SOT-23 MARKING 1DP
1dp sot-23
SOT-23 MARKING 1GP
code 1gp
marking 1Gp
BC846B
BC847B
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RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
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/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
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Untitled
Abstract: No abstract text available
Text: M ay 1997 MgLMicro Linear ML65T244 3.3V High Speed Dual Quad Buffer/Line Driver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 44 is a non-inverting dual quad buffer/line driver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal
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ML65T244
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