Transistor hFE CLASSIFICATION Marking CE
Abstract: KTX111T
Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name
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KTX111T
600mm
Transistor hFE CLASSIFICATION Marking CE
KTX111T
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BCR169
Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
Text: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see
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BCR169.
BCR169S
BCR169/F/L3
BCR169T/W
BCR169S/U
EHA07180
EHA07266
BCR169
BCR169F
BCR169
BCR169F
BCR169L3
BCR169T
SOt323 marking code 6X
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Untitled
Abstract: No abstract text available
Text: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package
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BCR185.
BCR185S
BCR185/F/L3
BCR185T/W
BCR185S/U
EHA07183
EHA07173
BCR185
BCR185F
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183/F/L3
BCR183T/W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
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BCR198W
Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package
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BCR198.
BCR198S:
BCR198/F/L3
BCR198T/W
BCR198S
EHA07183
EHA07173
BCR198
BCR198F
BCR198W
BCR198
BCR198F
BCR198L3
BCR198S
BCR198T
SCD80
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Untitled
Abstract: No abstract text available
Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • BCR192U: Two internally isolated transistors with good matching in one multichip package
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BCR192.
BCR192U:
BCR192/F/L3
BCR192T/W
BCR192U
EHA07183
EHA07173
BCR192
BCR192F
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
SMBT3906U
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transistor marking s2a
Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
transistor marking s2a
SMBT3906U
MMBT3904
MMBT3906
SMBT3904
SMBT3906
s2A SOT23
infineon marking code B2 SOT23
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183/F
BCR183W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3906S/
SMBT3906/
MMBT3906
SMBT3906U
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TRANSISTOR S2A
Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
TRANSISTOR S2A
SMBT3906U
transistor marking s2a
s2A SOT23
MMBT3906 TP
MMBT3904
MMBT3906
SMBT3904
SMBT3906
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BCR183
Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183/F
BCR183W
BCR183S/U
EHA07183
EHA07173
BCR183
BCR183F
BCR183
BCR183F
BCR183U
BCR183W
marking WMs
infineon marking code B2 SOT23
transistor marking 6c1
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s2A SOT23
Abstract: marking s2A sot23 SMBT3906U
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3906S/
SMBT3906/
MMBT3906
s2A SOT23
marking s2A sot23
SMBT3906U
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Untitled
Abstract: No abstract text available
Text: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package
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BCR183.
BCR183S
BCR183
BCR183W
BCR183S
BCR183U
EHA07183
EHA07173
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D marking PNP
Abstract: MARKING IC RP 6 PR63
Text: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
150mA,
300mA,
100kHz
100MHz
D marking PNP
MARKING IC RP 6
PR63
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transistor Y4
Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
complementary npn-pnp power transistors
marking A1 TRANSISTOR
marking 004
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marking Y1 transistor
Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Text: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
300mA
150mA,
300mA,
100kHz
100MHz
marking Y1 transistor
y1 transistor
complementary npn-pnp power transistors
y1 npn
transistor marking y1
FMB2227A
Supersot 6
transistor y1
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TMPT404
Abstract: No abstract text available
Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A
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H119
Abstract: TK71 T092-3
Text: TK71150N SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline D i mensions/Marking
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TK71150N
DB3-H119
TK71150N
QH7-B014.
DP2-K005
DB5-H119
H119
TK71
T092-3
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supersot 6 TE
Abstract: Supersot 6
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor
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FMB1020
300mA.
100uA
100mA
150mA
100MHz
100uA,
200mA,
supersot 6 TE
Supersot 6
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ITK71120N
Abstract: TK71 TK71120N
Text: TK71120N TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline Dimensions/Marking
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ITK71120N
/T/11
DB3-I008
TK71120N
TK71120N
QH7-B014.
DP2-K005.
ITK71120N
TK71
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TK71
Abstract: TK71220M 1220M
Text: TK71220M' TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5. Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking
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1220M'
TK71220M
TK71220M
QH7-B008.
DP3-G014.
TK71
1220M
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Low Drop Low Power Voltage Regulator
Abstract: TK71 TK71328M
Text: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking
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DB3-I103
TK71328M
TK71328M
QH7-B012.
DP3-G014.
Low Drop Low Power Voltage Regulator
TK71
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supersot 6 TE
Abstract: No abstract text available
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor
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FMB3946
100mA
100MHz
100uA,
supersot 6 TE
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