D 843 POWER TRANSISTOR Search Results

D 843 POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
BLF	Rochester Electronics	BLF278 - VHF Push-Pull Power VDMOS Transistor
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
ON5040	Rochester Electronics LLC	ON5040 - RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns

D 843 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CR21-103J-T Abstract: TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803 Text: DEMO MANUAL DC140 DESIGN-READY SWITCHERS LTC1436-PLL 2-Output Synchronous Buck Converter with Versatile Frequency Controller U DESCRIPTIO Demonstration circuit DC140 is a 2-output, general purpose evaluation platform intended to demonstrate the many functions of the LTC 1436-PLL and to make it easy	Original	DC140 LTC1436-PLL DC140 1436-PLL dc140f CR21-103J-T TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803	PDF
NTE58 Abstract: NTE59 Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE58 NTE59 NTE58 NTE59	PDF
63CV100BS Abstract: IPC-A-600E 63CV10 DC242 coiltron 2802S-02G2 TPSD107M010R0065 10BQ100 CTX200-4 LT1777 Text: DEMO MANUAL DC242 DC/DC CONVERTER LT1777 High Voltage, Low Noise Step-Down DC/DC Converter U DESCRIPTIO Demonstration Circuit DC242 is a high input voltage, low noise step-down buck regulator using the LT 1777 switching regulator IC. Typical applications are automotive cellular and GPS receivers, low noise telecom and	Original	DC242 LT1777 DC242 700mA IPC-A-600E dc242f 63CV100BS IPC-A-600E 63CV10 coiltron 2802S-02G2 TPSD107M010R0065 10BQ100 CTX200-4	PDF
p844m Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6 Text: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.	OCR Scan	MP843 10MI1 100Hz, 500/l/A 500//A 500//A p844m p845 P843M MP844 D 843 Transistor "micro power systems" mp845 dual fet L6	PDF
D 843 Transistor Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843 Text: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V	OCR Scan	840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843	PDF
D 843 Transistor Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840 Text: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842	OCR Scan	840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor 843FI e IRF 840 Application of irf840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840	PDF
D 843 Transistor Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843	OCR Scan	840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv	PDF
D 843 Transistor Abstract: 843 transistor Text: Central CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a	OCR Scan	CZT3120 OT-223 CP312 14-November OT-223 D 843 Transistor 843 transistor	PDF
UFN841 Abstract: UFN041 mosfet ir 840 features Hjc 22 Text: UNITRODE CORP 9347963 T2 UNITRODE DeT\| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown	OCR Scan	T347Tb3 D01D7Ô UFN842 UFN843 UFN841 UFN041 mosfet ir 840 features Hjc 22	PDF
Untitled Abstract: No abstract text available Text: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk	OCR Scan	SMBTA13 SMBTA14 Q68000-A4331 Q68000-A4332 Q6800Q-A6475 Q68000-A6476 23b320	PDF
f840 Abstract: IRF842R Text: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*	OCR Scan	F840/841/8 IRF840R/841R/842R/843R IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, IRF842R IRF843R f840	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2 S D 1 7 4 8 , 2SD1748, 2SD1748A 2 S D 1 7 4 8 A Package Dim ensions U n it ! mm Silicon NPN Triple-D iffused Planar D arlington Type 3.7m ax 7.3m ax. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B 1178A 3.2m ax. 0 .9 ± 0 . 1	OCR Scan	2SD1748, 2SD1748A 2SB1178, 2SB1748 2SB1748A 2SD1748 2SD1748A	PDF
Untitled Abstract: No abstract text available Text: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m	OCR Scan	BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40	PDF
MJE370 Abstract: MJE520 Text: r ^ z 7 7 S G # S - T H O M S O MJE370 MJE520 N M ^ Q 0 !y = © r a © R l g S COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene	OCR Scan	MJE370 MJE520 O-126 G-243S MJE370-MJE520 MJE370 MJE520	PDF

2SD1762 Abstract: No abstract text available Text: h ’7 > ' s Z . $ /Transistors 2SD1762 x t:$ y T J l'7 °ls -+ -B N P N h7 > y$ Epitaxial Planar NPN Silicon Transistor i& J ij& ll^ ^ llf f l /L o w F r e q . Power Amp. 2S D 17 6 2 • ^ J fiv H iE I/D im e n s io n s U n it: mm • 1) VcE(sat) V C E (s a t)= 0 .5 V (T y p .)	OCR Scan	2SD1762 2SB1185 2SB1185. 2SD1762	PDF
irf 1962 Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843 Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,	OCR Scan	IRF840 IRF841 IRF842 IRF843 irf 1962 irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843	PDF
MAX843 Abstract: No abstract text available Text: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.	OCR Scan	MAX840) MAX840 AX843/M AX844 MAX840 MAX843/MAX844 840/M 843/M MAX843/MAX844 MAX843	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ	OCR Scan	Q62702-C2254 OT-23 0535b05	PDF
TIP11s Abstract: TIP116 TIP110 TIP111 TIP112 TIP115 TIP117 USA060 Text: TIP115 TIP116 TIP117 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. N-P-N complements are	OCR Scan	TIP115 TIP116 TIP117 220AB TIP110, TIP111 TIP112. TIP116 TIP11s TIP110 TIP112 TIP117 USA060	PDF
Untitled Abstract: No abstract text available Text: TIP115 TIP116 TIP117 _ V PHILIPS INTERNATIONAL SbE ]> • V _ 711DûEb OÜ43S5b 742 ■ PHIN SILICON DARLINGTON POWER TRANSISTORS r -3 3 - 3 P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general	OCR Scan	TIP115 TIP116 TIP117 43S5b O-220AB TIP112. TIP117	PDF
2sb1748 Abstract: 2sb174 2SB1178 2SB1178A 2SD1748 2SD1748A Text: 2SD1748, 2SD1748A Power Transistors 2SD 1748, 2SD 1748A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3 . 7m a x 7.3max. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B1178A 0.9 :0.1 0.5max. I 3. 2m ax . • Features	OCR Scan	2SD1748, 2SD1748A 2SB1178, 2SB1178A 2SB1748 2SD1748 IH-25 2sb174 2SB1178 2SB1178A 2SD1748A	PDF
Untitled Abstract: No abstract text available Text: T IP 1 1 5 T IP 1 1 6 J _ T IP 1 1 7 V . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. N-P-N complements are	OCR Scan	O-220AB TIP110, TIP111 TIP112. TIP115 TIP116 TIP117 7Z82564	PDF
d844 Abstract: Transistors BD 330 Text: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and	OCR Scan	BD840 BD842 BD844 7110fl2b 00M303L. BD841 BD843. d844 Transistors BD 330	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 308 SIPMOS Power Transistor f • N channel • Enhancement mode • Avalanche-rated Type BUZ 308 ^DS 800 V ^DS on 4 Í2 2.6 A Package Ordering Code TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current Values	OCR Scan	O-218 C67078-S3109-A2 fl23SbÃ O-218AA	PDF

D 843 POWER TRANSISTOR Search Results

D 843 POWER TRANSISTOR Result Highlights (5)

D 843 POWER TRANSISTOR Datasheets Context Search

CR21-103J-T

NTE58

63CV100BS

p844m

D 843 Transistor

D 843 Transistor

D 843 Transistor

D 843 Transistor

UFN841

Untitled

f840

Untitled

Untitled

MJE370

2SD1762

irf 1962

MAX843

Untitled

TIP11s

Untitled

2sb1748

Untitled

d844

Untitled