"1 watt led"
Abstract: IN421 N102N "3 watt led" Energizer aaa Push button flashlight tail N526-ND HDL33A2 TUF4D1 6v lantern battery
Text: Industrial Alkaline and Silver Oxide Batteries Average Cut-Off Size V Capacity (mAh) Voltage (V) Rated Dimensions — Inch (mm) Drain/Load Diameter Height Weight oz. (g) Digi-Key Part No. Each D C AA AAA N 9V 6V Lantern D C AA 1.5 20,500 0.8 25mA 1.346 (34.2)
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4250IND:
N320-ND
N321-ND
N322-ND
N323-ND
"1 watt led"
IN421
N102N
"3 watt led"
Energizer aaa
Push button flashlight tail
N526-ND
HDL33A2
TUF4D1
6v lantern battery
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B6-4805S3
Abstract: No abstract text available
Text: B6 LF - Series 1.5 to 3 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features λ Wide 2 : 1 or 4 : 1 Input Range λ Low Ripple and Noise λ Input / Output Isolation 1.5K Vdc λ 100% Burn-In λ Input p - Filter λ Custom Design Available λ Net Weight : 12 g / 14 g
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Spec-061003
B6-4805S3
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b6 lf series
Abstract: B6-125/165-40SI
Text: B6 LF Series 1.5~3W Isolated DC/DC Converter Features: zWide 2 : 1 Input Range zInput π- Filter zInput / Output Isolation 1.5K Vdc zLow Ripple And Noise z100% Burn-In zRegulated type zNet Weight : 12 g / 14 g Typical z24 Pin DIL Package zCustom Design Available
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B6-123R3S1
B6-1205S1
B6-4805S1
B6-1205S2P
18Vdc
b6 lf series
B6-125/165-40SI
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LF 833
Abstract: Enterprise 1500 lf 1250 B7-1205S10 B7-1205S15 B7-1212S15 B7-123R3S10 B7-2405S10 B7-2405S15 B7-2412S10
Text: B7 LF Series 10 to 15 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features λ λ λ λ λ λ λ λ Wide 2 : 1 Input Range Low Ripple and Noise Input / Output Isolation 1.5K Vdc or 3K Vdc 100% Burn-In Input p - Filter Custom Design Available Net Weight : 24 g / 36.5 g Typical
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B7-123R3S10
Spec-061003
LF 833
Enterprise 1500
lf 1250
B7-1205S10
B7-1205S15
B7-1212S15
B7-2405S10
B7-2405S15
B7-2412S10
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Untitled
Abstract: No abstract text available
Text: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers
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C/400V
Mil-HB-217F)
11mm/min.
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Untitled
Abstract: No abstract text available
Text: Preliminary datasheet FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state of the art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers
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C/400V
Mil-HB-217F)
ISO2768
EN22768
11mm/min.
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Dc servo motor
Abstract: 3 phase 200 VAC servo drive schematic EN 133200 ISO 2768 ISO 2768 c rfi filter
Text: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers
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Original
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C/400V
Mil-HB-217F)
11mm/min.
Dc servo motor
3 phase 200 VAC servo drive schematic
EN 133200
ISO 2768
ISO 2768 c
rfi filter
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Untitled
Abstract: No abstract text available
Text: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current n n n n n n n n Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers Revolutionary embedded filter terminals
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C/400V
Mil-HB-217F)
10mm2
20mm2
496-405B
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Untitled
Abstract: No abstract text available
Text: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current n n n n n n n n Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers Revolutionary embedded filter terminals
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C/400V
10mm2
20mm2
496-405B
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5B05
Abstract: 62901-B11-A buw70
Text: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 SIEMENS AKTIEN6ESELLSCHAF BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high
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235b05
BUW71
62702-U
62901-B11-A
62901-B50
5B05
buw70
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U296
Abstract: BUW71 Q62702-U297 BUW72 BUW70 D-12 Q62702-U295 Q62901-B11-A Q62901-B50 fl23SbQS
Text: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high
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BUW71
Q62702-U295
62702-U296
Q62702-U297
Q62901-B11-A
Q62901-B50
U296
Q62702-U297
BUW72
BUW70
D-12
Q62702-U295
Q62901-B11-A
Q62901-B50
fl23SbQS
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BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
2JS41W
BFX89
Transistor BFX 90
BFX 514
Q62702-F296
Q 371 Transistor
2sc 684
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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AFY12
Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
Text: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator
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AFY12
Q60106
120mmho
AFY12
OC 140 germanium transistor
103MHZ
Germanium Transistor
FLR12
611b transistor
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E225703
Abstract: ITE Tech M-87 SPEC
Text: Adapter Technology CoLt d 1 et 1. Feature : ♦ Input ♦ Output ♦ Case Dimension : 72 L * 34 (W) * 69 (H) mm ♦ Efficiency : E ff(av) ^ 76.87 % . ♦ Safety : U L /C U L /P S E /B S M I ♦ EMI : Meet FCC Protection : OVP (Over Voltage Protection) ' SCP (Short Circuit Protection) '
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240Vac
115Vac
230Vac
240Vac
E225703
ITE Tech
M-87 SPEC
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AF 239 S
Abstract: AF 239 af239 Germanium power S 239 L siemens
Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbQS
Q62701-F51
oro-20
F--05
AF239S
AF 239 S
AF 239
af239
Germanium power
S 239 L siemens
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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2n3824
Abstract: transistor a effet de champ 3824
Text: 2I\I 3824 F IE L D E FF E C T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E F FE T DE CHAMP, SILICIUM , CANAL N Chopper Découpeur Maximum power dissipation Case TO -72 — See outline drawing CB-4 on last pages Dissipation aepuissance maximale
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Untitled
Abstract: No abstract text available
Text: Weinschel Model 72 New Product dc to 4.0 GHz MEDIUM POWER COAXIAL ATTENUATOR 50 WATTS Type N C onnectors C onduction C ooled TEM PERATURE RANGE: -55 °C to 100 °C case . CONNECTORS: T yp e N c o n n e c to rs per M IL-S T D -3 4 8 interface dim ensions - mate n o n d e s tru c tiv e ^ with
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MIL-C-39012
Maryland21703-7362
g/28/98
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Untitled
Abstract: No abstract text available
Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers
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S35bOS
Q0Q47SÔ
Q62702-F320
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transistor a750
Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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AF240
TambS45
0004Q7A
transistor a750
F240 transistor
TIC 122 Transistor
Germanium power
tic 122
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R836
Abstract: m 7401
Text: MICROWAVE ISOLATOR-SURFACE MOUNT muffata CE072 Series f FEATURES • ■ ■ ■ ■ Surface mount Reflow soldering capability Miniature size 7.0 x 7.0 x 3.0mm Light weight (0.8g) High reliability APPLICATIONS ■ Hand Held Telephone ■ Cordless Telephone
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CE072
R836
m 7401
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FSS-1200
Abstract: FSS1412P 1432h FSS-1412P FRS1412P FRS1154P FSS OPTREX 1412 FSS1432PH ic 8035 FSS-1432P
Text: OPTREX CORP 3bE D • bflD2ô2,ï D0001Q3 T « O P C J "T q|-3,g LCD PANEL 1. Light weight and thin structure. 2. Low driving voltage and low power consumption l~10^w/cm! , which easily enable by battery driving in combinations with C-MOS LSI. 3. Pattern graphics can be designed rather freely.
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D0001Q3
FSS-1200
FSS1412P
1432h
FSS-1412P
FRS1412P
FRS1154P
FSS OPTREX 1412
FSS1432PH
ic 8035
FSS-1432P
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TI159
Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
Text: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d
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TI159,
TI162
TI161,
TI159
TI-162
AF267
Germanium Transistor
Texas Germanium
160 germanium transistor
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