D022257 Search Results

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Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P 1dB = 3 9 .5 dBm at 1.8 G H z • High gain - G 1dB = 10 .0 dB at 1.8 G H z • Herm etically sealed p ack ag e RF Performance Specifications (Ta = 25° C)