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    Abstract: No abstract text available
    Text: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils


    OCR Scan     		PDF D0301SD SGSP477 18x18