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    D03FU Search Results

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    D03FU Price and Stock

    Toshiba America Electronic Components HN1D03FU,LF

    Diode Switching 85V 0.08A 6 SOT-363 - Tape and Reel (Alt: HN1D03FU,LF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HN1D03FU,LF Reel 20 Weeks 3,000
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    • 10000 $0.04917
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    Mouser Electronics HN1D03FU,LF 5,553
    • 1 $0.32
    • 10 $0.192
    • 100 $0.09
    • 1000 $0.08
    • 10000 $0.049
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    Toshiba America Electronic Components HN1D03FU,LF(T

    Switching Diode, 1.2V, 2A, Sot-363 Rohs Compliant: Yes |Toshiba HN1D03FU, LF(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark HN1D03FU,LF(T Reel 3,000
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    • 10000 $0.053
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    HN1D03FU,LF(T Cut Tape 5
    • 1 $0.355
    • 10 $0.272
    • 100 $0.129
    • 1000 $0.086
    • 10000 $0.086
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    Chip1Stop HN1D03FU,LF(T Cut Tape 2,775
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    • 100 $0.0861
    • 1000 $0.0639
    • 10000 $0.0597
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    EBV Elektronik HN1D03FU,LF(T 13 Weeks 3,000
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    Toshiba America Electronic Components HN1D03FU TE85R

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1D03FU TE85R 6,000
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    Toshiba America Electronic Components HN1D03FU(T5LFT)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1D03FU(T5LFT) 1,966
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    Toshiba America Electronic Components HN1D03FUTE85R

    Rectifier Diode, 4 Element, 0.08A, Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HN1D03FUTE85R 45,000
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    D03FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 1.25±0.1 Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		PDF HN1D03FU D03FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 db0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D03FU N1D03FU 100UG

    HN1D03FU

    Abstract: No abstract text available
    Text: TOSHIBA D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. 2.1 db0.1 U n it 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		PDF HN1D03FU N1D03FU HN1D03FU

    Untitled

    Abstract: No abstract text available
    Text: D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.Ü0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		PDF HN1D03FU D03FU