Untitled
Abstract: No abstract text available
Text: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1005UK
175MHz
16swg
18swg
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D1005UK
Abstract: No abstract text available
Text: TetraFET D1005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1005UK
175MHz
16swg
18swg
D1005UK
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PDF
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D1005UK
Abstract: No abstract text available
Text: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1005UK
175MHz
5-57pF
D1005UK
175MHz
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D1005UK
Abstract: D1005
Text: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1005UK
175MHz
D1005UK
D1005
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: bDE D M 6133107 OODOTlfl blû • S M L B - 'T-1>\-ZS SEMELAB SEMELAB PLC D1005UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RFFET 80W -28V -175M H z SINGLE ENDED MECHANICAL DATA Dim ensions FEATURES
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OCR Scan
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D1005UK
-175M
17DIA
300/iS,
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Untitled
Abstract: No abstract text available
Text: II I TetraFET itti SEME il D1005UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED *• F 4 FEATURES t H y • SIMPLIFIED AMPLIFIER DESIGN . K i J • SUITABLE FOR BROAD BAND APPLICATIONS
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OCR Scan
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D1005UK
175MHz
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BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db
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OCR Scan
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BFM12
BFM21
BFM22
BFM23
BFM32
BFM33
BFM34
BFM35
D1001UK
D1002UK
BFM33
BFM34
BFM-12
BFM32
D1022UK
D1053UK
D1015UK
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