Untitled
Abstract: No abstract text available
Text: bOE D SEMELAB • Ô1331Ô7 GDDD'ìPfl PLC Sb? «S flL B SEMELAB D1010UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 125W -28V-400M HZ PUSH-PULL M E C H A N IC A L D A TA Dimensions FEATURES • EXTRA LOW PIN1 SOURCE COMMON
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D1010UK
-28V-400M
300/iS,
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D1010UK
Abstract: No abstract text available
Text: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1010UK
500MHz
D1010UK
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Untitled
Abstract: No abstract text available
Text: D1010UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)70 V(BR)GSS (V)20.0 I(D) Max. (A)20 P(D) Max. (W)350 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)4.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.3.2
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D1010UK
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D1010UK
Abstract: 064R UT85 UT85-15
Text: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1010UK
500MHz
25swg
FT50B-43
D1010UK
064R
UT85
UT85-15
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Untitled
Abstract: No abstract text available
Text: mi TetraFET itti Nil SEM E D1010UK LAB METAL GATE RF SILICON FET MECHANICAL DATA G c 2 pis (typ) * p H D i (2 pis) !A T ▼ GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W - 28V -500MHz PUSH-PULL (4 pis) FEATURES T . T • SIMPLIFIED AMPLIFIER DESIGN
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D1010UK
-500MHz
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Untitled
Abstract: No abstract text available
Text: Illl TetraFET E^E mi D1010UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 5 W - 28V -500 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON
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D1010UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1010UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1010UK
500MHz
25swg
FT50B-43
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET SEM E D1010UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 5 W -2 8 V -5 0 0 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR
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D1010UK
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D1010UK
Abstract: No abstract text available
Text: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1010UK
500MHz
D1010UK
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064R
Abstract: D1010UK UT85 UT85-15
Text: TetraFET D1010UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1010UK
500MHz
25swg
FT50B-43
064R
D1010UK
UT85
UT85-15
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UT85 50
Abstract: UT85 coax 064R D1009UK D1010UK UT85 UT85-15
Text: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1010UK
500MHz
2-18pF
680pF
D1009UK
D1010UK
UT85 50
UT85 coax
064R
D1009UK
UT85
UT85-15
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D1009UK
Abstract: D1010UK UT85 UT85-15 UT85 coax
Text: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1010UK
500MHz
091pF
D1009UK
2-18pF
680pF
D1009UK
D1010UK
UT85
UT85-15
UT85 coax
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BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db
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BFM12
BFM21
BFM22
BFM23
BFM32
BFM33
BFM34
BFM35
D1001UK
D1002UK
BFM33
BFM34
BFM-12
BFM32
D1022UK
D1053UK
D1015UK
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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