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    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1307014 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1307014 PDF