Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D2386 TOSHIBA Search Results

    D2386 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    D2386 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2386 TOSHIBA

    Abstract: No abstract text available
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SD2386 2SB1557 2-16C1A D2386 TOSHIBA PDF

    D2386

    Abstract: D2386 TOSHIBA 2SB1557 2SD2386
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386 PDF

    D2386

    Abstract: 2SB1557 2SD2386
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SD2386 2SB1557 2-16C1A D2386 2SB1557 2SD2386 PDF