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    D2D DIODE Search Results

    D2D DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    D2D DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Crydom

    Abstract: D2D DIODE Crouzet d2d40 Kavlico Crouzet motor CRYDOM D40-1
    Text: CRYDOM ANNOUNCES THE ADDITION OF 4 NEW HIGH POWER DC OUTPUT SSRs New D1D and D2D series solid state relays add to Crydom’s already extensive offer for high-current DC applications such as heater, lighting and motor control Crydom’s D1D and D2D series of FET output


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    vde 5e4 t85

    Abstract: T85 1e4 Switch D2D-1000 D2D-1002 T85 DOOR INTERLOCK
    Text: Door Interlock Switch D2D Power Switch with Minimum Contact Gap of 3 mm Offers the minimum contact gap of 3 mm required for power switches as standard equipment. Highly reliable design conforms to European safety standards. Safety considerations include a double return


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    RB491D

    Abstract: No abstract text available
    Text: SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D2D 2. 92¡ À0. 05 RB491D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃


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    PDF OT-23-3L RB491D RB491D

    RB491D

    Abstract: No abstract text available
    Text: RB491D SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D2D 2. 92¡ À0. 05 RB491D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃


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    PDF RB491D OT-23-3L RB491D

    D3G 21

    Abstract: RF Product Device Data t8 ballast circuits MC33170 MRFIC1859 MRFIC1859R2 B2B diode motorola ic inv buffer transistor d 1710
    Text: MRFIC1859 Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


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    PDF MRFIC1859 MRFIC1859 GSM900/DCS1800 04JUL02 04JAN02 MRFIC1859/D D3G 21 RF Product Device Data t8 ballast circuits MC33170 MRFIC1859R2 B2B diode motorola ic inv buffer transistor d 1710

    DIODE d1d

    Abstract: diode d3d 25C5250 B23G diode D2B
    Text: MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


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    PDF MRFIC1859 GSM900/DCS1800 MRFIC1859 AN1599 MRFIC0913 MC33169 AN1697 DIODE d1d diode d3d 25C5250 B23G diode D2B

    kt812

    Abstract: No abstract text available
    Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


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    PDF MRFIC1859/D MRFIC1859 GSM900/DCS1800 MRFIC1859 kt812

    TQFP-32EP

    Abstract: transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME
    Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


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    PDF MRFIC1859/D MRFIC1859 MRFIC1859 GSM900/DCS1800 TQFP-32EP transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME

    kt812

    Abstract: TQFP-32EP transistor D 1710
    Text: Order this document by MRFIC1859/D MRFIC1859 Advance Information Dual-Band/GSM 3.6 V Integrated Power Amplifier DUAL–BAND GSM 3.6 V IPA The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage


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    PDF MRFIC1859/D MRFIC1859 MRFIC1859 GSM900/DCS1800 kt812 TQFP-32EP transistor D 1710

    Untitled

    Abstract: No abstract text available
    Text: TC7USB221FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7USB221FT Dual SPDT USB Switch TC7USB221 is high-speed CMOS dual 1-2 multiplexer /demultiplexer. The low on resistance and the low capacitance of the switch allow connections to USB application.


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    PDF TC7USB221FT TC7USB221

    Untitled

    Abstract: No abstract text available
    Text: MRFIC1859 DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


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    PDF MRFIC1859 MRFIC1859 GSM900/DCS1800 IP405, MRFIC1859/D 04JUL02 04JAN02

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.


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    PDF 1N6642D2A 1N6642D2B 1N6642D2C 1N6642D2D 63Sn/37Pb) 300mA 1N6642D2D-JQRS

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.


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    PDF 1N6642D2A 1N6642D2B 1N6642D2C 1N6642D2D 63Sn/37Pb) 300mA 1N6642D2D-JQRS

    D2D DIODE

    Abstract: RB491D
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage


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    PDF OT-23-3L OT-23-3L RB491D D2D DIODE RB491D

    TC7USB221

    Abstract: D2D marking code TC7USB221WBG toshiba trace code
    Text: TC7USB221WBG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7USB221WBG Dual SPDT USB Switch TC7USB221 is high-speed CMOS dual 1-2 multiplexer /demultiplexer. The low ON-resistance and the low capacitance of the switch allow connections to USB application.


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    PDF TC7USB221WBG TC7USB221 D2D marking code TC7USB221WBG toshiba trace code

    isp2032

    Abstract: pci slot pinout sy8009 STK 1000 watt power amp circuit diagram TRANSISTOR A107 stk 411 5.1 Amp Block Diagram lattice isp2032 tm 48f 038 transformer S870BN4 BMC MOUNTING RING
    Text: Intel Server Board S870BN4 Board Set Technical Product Specification Revision 2.5 June, 2003 Enterprise Platforms and Services Division Revision History Intel® Server Board S870BN4 Board Set TPS Revision History Date June, 2003 Revision Number 2.5 Modifications


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    PDF S870BN4 S870BN4 E8870 82802AC isp2032 pci slot pinout sy8009 STK 1000 watt power amp circuit diagram TRANSISTOR A107 stk 411 5.1 Amp Block Diagram lattice isp2032 tm 48f 038 transformer BMC MOUNTING RING

    410 hall

    Abstract: ADR620 MC34xx vJ26 ctr32 ctr31 MARKING C3F 334 te 2395 TC2120 437324
    Text: Freescale Semiconductor Advanced Information Document Number: MM912F634 Rev. 6.0, 9/2012 Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 HCS12 16-Bit 10-Bit, 410 hall ADR620 MC34xx vJ26 ctr32 ctr31 MARKING C3F 334 te 2395 TC2120 437324

    ctr32

    Abstract: sensor interfacing with hcs12 microcontroller 0X0109 SSF20 M68HCS12
    Text: Freescale Semiconductor Advanced Information Document Number: MM912F634 Rev. 5.0, 11/2010 Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 HCS12 16-Bit 10-Bit, ctr32 sensor interfacing with hcs12 microcontroller 0X0109 SSF20 M68HCS12

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advanced Information Document Number: MM912F634 Rev. 7.0, 5/2013 Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 48-PIN MM912F634 HCS12 16-Bit

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advanced Information Document Number: MM912F634 Rev. 5.0, 11/2010 Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 48-PIN MM912F634 HCS12 16-Bit

    MC9S12I32

    Abstract: 43561 43461 0X0103 CTR30 CSE06 micro HCS12 NV 15F HCS12 HS21
    Text: Document Number: MM912F634 Rev. 4.0, 10/2010 Freescale Semiconductor Advanced Information Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 48-PIN MM912F634 HCS12 16-Bit MC9S12I32 43561 43461 0X0103 CTR30 CSE06 micro HCS12 NV 15F HS21

    MM912F634

    Abstract: S12SPIV4 lift control ISO7637-2 NV 15F relay 5v to 12v pin connections hcs12 S08 CRG 48-PIN HCS12 HS21
    Text: Document Number: MM912F634 Rev. 5.0, 11/2010 Freescale Semiconductor Advanced Information Integrated S12 Based Relay Driver with LIN MM912F634 48-PIN LQFP-EP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option The MM912F634 is an integrated single package solution that


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    PDF MM912F634 48-PIN MM912F634 HCS12 16-Bit S12SPIV4 lift control ISO7637-2 NV 15F relay 5v to 12v pin connections hcs12 S08 CRG HS21

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MM912_634D1 Rev. 11.0, 4/2014 Integrated S12 Based Relay Driver with LIN 912_634 The MM912G634 48 kB and MM912H634 (64 kB) are integrated, MagniV, single package solutions that integrate an HCS12 microcontroller with a SMARTMOS analog control IC.


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    PDF 634D1 MM912G634 MM912H634 HCS12 16-Bit

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS CBL1 Double diode output pentode Duodiode-penthode de sortie Doppeldiode-Endpentode Heating : indirect by A.C. or D.C.; series supply Chauffage: indirect par C.A. ou C.C.; alimentation en série Heizung : indirekt durch Wechsel­ oder Gleichstrom;


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