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    D3A TRANSISTOR Search Results

    D3A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D3A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX11855

    Abstract: MAX11856
    Text: 19-2175; Rev 0; 10/01 Dual 10-Bit, 20Msps, +3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs Ordering Information PART TEMP. RANGE MAX1185ECM PIN-PACKAGE -40°C to +85°C 48 TQFP-EP D3A/B D2A/B 38 37 D5A/B D4A/B 40 39 D7A/B D6A/B


    Original     		PDF 10-Bit, 20Msps, MAX1185 10-bit 105mW 20Msps. MAX1185 MAX11855 MAX11856

    MAX11855

    Abstract: MAX1185ECM MAX4108 MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 bd-9a
    Text: 19-2175; Rev 0; 10/01 Dual 10-Bit, 20Msps, +3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs Video Application Ultrasound 48 TQFP-EP 37 38 39 40 41 42 43 44 45 46 47 48 REFN REFP REFIN REFOUT D9A/B D8A/B D7A/B D6A/B D5A/B D4A/B D3A/B


    Original     		PDF 10-Bit, 20Msps, MAX1185 MAX11855 MAX1185ECM MAX4108 MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 bd-9a

    2-bit flash adc

    Abstract: No abstract text available
    Text: 19-2263; Rev 0; 12/01 Dual 10-Bit, 40Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs MAX1186ECM -40°C to +85°C 48 TQFP-EP D3A/B D2A/B 38 37 D5A/B D4A/B 40 39 D7A/B D6A/B 42 41 D9A/B D8A/B 44 43 REFIN REFOUT 45 46 Pin Configuration


    Original     		PDF 10-Bit, 40Msps, MAX1186 10-bit 105mW 20MHz 40Msps. 2-bit flash adc

    D3A transistor

    Abstract: No abstract text available
    Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper


    Original     		PDF MC10E404, MC100E404 MC10E404/100E404 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568 D3A transistor

    c2021 transistor

    Abstract: transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551
    Text: SPT AN7852 EVALUATION BOARD SIGNAL PROCESSING TECHNOLOGIES APPLICATION NOTE FEATURES • • • • • • • • APPLICATIONS Dual Channel Analog Input 10-Bit Resolution Up to 20 MSPS Conversion Rate On-Board Clock Drivers On-Board Adjustable References


    Original     		PDF AN7852 10-Bit SPT7852 SPT7852 EB7852 1N5712 2N2222A OP291 LTC1152 c2021 transistor transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551

    marking CODE D2B

    Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
    Text: MC10EP105 Product Preview Quad 2-Input Differential AND/NAND The MC10EP105 is a 2–input differential AND/NAND gate. Each gate is functionally equivalent to a EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the EP105 is ideal for applications requiring the fastest AC performance available.


    Original     		PDF MC10EP105 MC10EP105 LVEL05 EP105 190ps r14525 MC10EP105/D marking CODE D2B MARKING CODE D3B MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code

    EP105

    Abstract: MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint
    Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 LQFP-32 MC10EP105/D MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint

    Untitled

    Abstract: No abstract text available
    Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 MC10EP105/D

    MC100E404

    Abstract: MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND
    Text: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper


    Original     		PDF MC10E404, MC100E404 MC10E404/100E404 r14525 MC10E404/D MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND

    LQFP-32 footprint

    Abstract: No abstract text available
    Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 MC10EP105/D LQFP-32 footprint

    ECL IC NAND

    Abstract: No abstract text available
    Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be


    Original     		PDF MC10E104, MC100E104 MC10E/100E104 MC10E104FN PLCC-28 AND8020 AN1404 AN1405 AN1406 AN1503 ECL IC NAND

    Untitled

    Abstract: No abstract text available
    Text: MC10E157, MC100E157 5 V ECL Quad 2:1 Multiplexer The MC10E/100E157 contains four 2:1 multiplexers with differential outputs. The output data are controlled by the individual Select SEL inputs. The individual select control makes the devices well suited for random logic designs.


    Original     		PDF MC10E157, MC100E157 MC10E/100E157 MC10E157FN PLCC-28 AND8020 AN1404 AN1405 AN1406 AN1503

    ECL IC NAND

    Abstract: H 3355 MC10E404 MC10E404FN MC10E404FNR2 MC100E404 MC100E404FN MC100E404FNR2
    Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper


    Original     		PDF MC10E404, MC100E404 MC10E404/100E404 MC10E404/D ECL IC NAND H 3355 MC10E404 MC10E404FN MC10E404FNR2 MC100E404 MC100E404FN MC100E404FNR2

    marking CODE D2B

    Abstract: MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2
    Text: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper


    Original     		PDF MC10E404, MC100E404 MC10E404/100E404 r14525 MC10E404/D marking CODE D2B MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2

    32 TQFP test socket

    Abstract: marking CODE D2B EP105 MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 MARKING CODE D3B
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 r14525 MC10EP105/D 32 TQFP test socket marking CODE D2B MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 MARKING CODE D3B

    tqfp 64 thermal resistance

    Abstract: marking CODE D2B
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 r14525 MC10EP105/D tqfp 64 thermal resistance marking CODE D2B

    EP105

    Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2

    Untitled

    Abstract: No abstract text available
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 r14525 MC10EP105/D

    Untitled

    Abstract: No abstract text available
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D

    EP105

    Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 marking CODE D2B
    Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,


    Original     		PDF MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 marking CODE D2B

    MC100E107

    Abstract: MC100E107FN MC100E107FNR2 MC10E107 MC10E107FN MC10E107FNR2 marking CODE D2B
    Text: MC10E107, MC100E107 5VĄECL Quint 2ĆInput XOR/XNOR Gate The MC10E/100E107 is a quint 2-input XOR/XNOR gate. The function output F is the OR of all five XOR outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be used.


    Original     		PDF MC10E107, MC100E107 MC10E/100E107 MC10E107FN EIA/JESD78 r14525 MC10E107/D MC100E107 MC100E107FN MC100E107FNR2 MC10E107 MC10E107FN MC10E107FNR2 marking CODE D2B

    DUAL DIODE

    Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE
    Text: SOT-23 TRANSISTORS & DIODES SILICON ABRIJPT TUNER D ODES Type FM M V2101 F M M V 2 10 2 FM M V 2 1 0 3 FM M V 2 1 0 4 FM M V2105 FM M V 2 1 0 6 FM M V 2 1 07 FM M V 2 1 0 8 FM M V 2 1 0 9 max. Capacitance ratio f=1M Hz C 2/C 20 min. Q at V „ = 3V f = 50MHz


    OCR Scan     		PDF OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 DUAL DIODE g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE

    marking z7

    Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4


    OCR Scan     		PDF OT-23 BAV70 BZX84-C43 BZX84-C47 BAV99 FMMD109 BAW56 FMMD914 BZX84 FMMD3102 marking z7 Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914

    301 marking code PNP transistor

    Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
    Text: UMD3N D3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP


    OCR Scan     		PDF SC-74) DTA114EKA) DTC114EKA) SC-70) SC-59) 301 marking code PNP transistor Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74