HUF75307D
Abstract: No abstract text available
Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology
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5V/75A/0
OT-223
O-251AA/252AA
O-220AB
HUF75345P3
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
O-262AA/263AB
HUF75307D
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d3s diode
Abstract: DIODE D3S 90 DIODE d3s D3S 50 D3SB10 D3SB10 20 Diode B60 d3s 04 diode d3s 15 D3SB80
Text: High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique
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UL94V-O
MIL-STD-202,
d3s diode
DIODE D3S 90
DIODE d3s
D3S 50
D3SB10
D3SB10 20
Diode B60
d3s 04 diode
d3s 15
D3SB80
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d3s 05 diode
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,
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bbS3T31
02570A
BYV40
OT223
BYV40
Q025712
0D35713
d3s 05 diode
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Untitled
Abstract: No abstract text available
Text: LVQ02 fciME ]> bSüllEE DG7b374 D3S « N S C l Semiconductor 54LVQ/74LVQ02 Low Voltage Quad 2-Input NOR Gate General Description Features The ’LVQ02 contains four, 2-input NOR gates. • Ideal for low power/low noise 3.3V applications ■ Guaranteed simultaneous switching noise level and
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LVQ02
DG7b374
54LVQ/74LVQ02
LVQ02
TL/F/11342-1
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Sharp IIS
Abstract: C31A SHARP ORDERING INFORMATION
Text: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •
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LH5P8512
32-pin,
600-mil
525-mil
400-mil
LH5P8512
Sharp IIS
C31A
SHARP ORDERING INFORMATION
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Untitled
Abstract: No abstract text available
Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR
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01N80
01N100
O-251
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D3S 50
Abstract: OA61 AEG Diode
Text: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal
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005145b
I-10m
lF-lR-10mA
-dlF/dt-15A/ns
D3S 50
OA61
AEG Diode
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Untitled
Abstract: No abstract text available
Text: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming
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DG01SM7
WS57C71C
WS57C71C
MIL-STD-883C
MIL-STD-883C
WS57C71C-35J
WS57C71C-35L
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75w 50
Abstract: VP1106N1 VP1106N2 VP1106N5 VP1106ND VP1110N1 VP1110N2 VP1110N5 VP1110ND VP11A
Text: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PE RT EX INC 01E 01731 D VP11A Supertex inc. T -3Ï-I? /1g\ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rd e r N um b e r / P ackage b v D3S/ ^DS ON ^D(ON) bvms
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773ETS
VP11A
O-220
VP1106N1
VP1106N2
VP1106N5
VP1106ND
VP1110N1
VP1110N2
VP1110N5
75w 50
VP1106ND
VP1110ND
VP11A
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Untitled
Abstract: No abstract text available
Text: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)
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VP11A
VP1106N1
VP1110N1
VP1106N2
VP1110N2
O-220
VP1106N5
VP1110N5
VP1106ND
VP1110ND
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BLX94C
Abstract: BLX94A BLX94
Text: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested
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BLX94A
D021b3E
BLX94C
BLX94C
---BLX94A
-BLX94C.
BLX94
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d3s diode
Abstract: No abstract text available
Text: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1906
apacit63
51193TH
X-8377
Na4225-l/3
d3s diode
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d3s diode
Abstract: DIODE d3s 2092A
Text: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage
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2SK1471
A2092A
71993TH
d3s diode
DIODE d3s
2092A
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m 43171
Abstract: 2sj307 43171
Text: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C
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2SJ307
10//S
53093TH
AX-9094
m 43171
2sj307
43171
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d3s diode
Abstract: d3s4m diode DIODE d3s
Text: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity
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J515-5
d3s diode
d3s4m diode
DIODE d3s
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"digital to synchro"
Abstract: digital to synchro converter DSL416 DSL412 DSL410 DSL60-H-1 Scans-001802 synchro to digital converter 11 bits synchro computer conversions
Text: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W
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2310fl0D
DSL60-H-1
DSL412
DSL410)
DSL416)
-15VO
"digital to synchro"
digital to synchro converter
DSL416
DSL410
Scans-001802
synchro to digital converter 11 bits
synchro computer conversions
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"digital to synchro"
Abstract: digital to synchro converter DSL60-H-1 DSL40 DSL410 DSL416 DSL412 synchro to digital converter 11 bits DSL40-LorH-1
Text: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W
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2310fl0D
DSL60-H-1
DSL412
DSL410)
DSL416)
-15VO
"digital to synchro"
digital to synchro converter
DSL40
DSL410
DSL416
synchro to digital converter 11 bits
DSL40-LorH-1
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2SK941
Abstract: transistor 2SK941 za sot89 d3s diode
Text: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .
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2SK941
20kfl)
O-220FL
00E3b43
O-220SM
002Bb44
2SK941
transistor 2SK941
za sot89
d3s diode
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2SK941
Abstract: transistor 2SK941
Text: TO S H IB A 2SK941 T G T T S S D 0 Q 2 3 2 7 cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .
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2SK941
20kfl)
50URCE
O-220FL
0023b43
O-220SM
TDT725Q
0EBb44
2SK941
transistor 2SK941
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d3s diode
Abstract: d3s schottky Ic d3s DIODE D3S 90
Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies
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22kHz
HUF75345P3
HUF75344P3
HRF3205
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
HUF75329P3
HUF75345S3/S3S
d3s diode
d3s schottky
Ic d3s
DIODE D3S 90
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SEGA
Abstract: 100PF NJU6415 SEG40
Text: NJU6415 Y .y h V h IJ y ? X L C D 151- •m s NJU6415 l ì , -tzi’V K ' y h v h U i ^ i S â i S i y ' J T A A A , > h K 7 - f A 'T , fi 80 H r f * Î È * f f l K 7 -î/n*t L T S i â T - f o r t S R 80 tC "j Y =7-y^-t 4 U ^ J L - K 7 - 1 ' ^ \ ' * ' i b * S $ n T l ' i ' r o
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NJU6415
VDD-13
100/f
SEG45
SEG41
SEG40
SEG35
100PF
SEGA
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D3S 50
Abstract: d3s 15
Text: Low power diodes Rectifier diodes Type V rrm O u tlin e If a v m t Ir A A MS °c 160 3 - 150 97 100 6 150 98 V br If s m tv j r'lax O u tlin e If s m 1= tv, m ax 10 ms tv. = tv, max V 200 • 03/ 800 06/ 1200 1400 1600 Controlled avalanche diodes Type V rrm
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D2S 56
Abstract: OA61 S1600 sj51
Text: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175
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DGDT33S
-62J5
S1600
D2S 56
OA61
sj51
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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