d3s diode
Abstract: DIODE D3S 90 DIODE d3s D3S 50 D3SB10 D3SB10 20 Diode B60 d3s 04 diode d3s 15 D3SB80
Text: High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique
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UL94V-O
MIL-STD-202,
d3s diode
DIODE D3S 90
DIODE d3s
D3S 50
D3SB10
D3SB10 20
Diode B60
d3s 04 diode
d3s 15
D3SB80
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DIODE D3S 90
Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16
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O-252-2L)
O-252-3L)
O-263/D2PAK
O-263/D2PAK
O-268
DIODE D3S 90
BC 247 sot-23
d2s diode
DIODE d3s
TRAY DIMENSIONS SOIC16
tape & reel
d3s diode
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d3s 05 diode
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,
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bbS3T31
02570A
BYV40
OT223
BYV40
Q025712
0D35713
d3s 05 diode
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Untitled
Abstract: No abstract text available
Text: LVQ02 fciME ]> bSüllEE DG7b374 D3S « N S C l Semiconductor 54LVQ/74LVQ02 Low Voltage Quad 2-Input NOR Gate General Description Features The ’LVQ02 contains four, 2-input NOR gates. • Ideal for low power/low noise 3.3V applications ■ Guaranteed simultaneous switching noise level and
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LVQ02
DG7b374
54LVQ/74LVQ02
LVQ02
TL/F/11342-1
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D3S 50
Abstract: OA61 AEG Diode
Text: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal
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005145b
I-10m
lF-lR-10mA
-dlF/dt-15A/ns
D3S 50
OA61
AEG Diode
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75w 50
Abstract: VP1106N1 VP1106N2 VP1106N5 VP1106ND VP1110N1 VP1110N2 VP1110N5 VP1110ND VP11A
Text: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PE RT EX INC 01E 01731 D VP11A Supertex inc. T -3Ï-I? /1g\ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rd e r N um b e r / P ackage b v D3S/ ^DS ON ^D(ON) bvms
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773ETS
VP11A
O-220
VP1106N1
VP1106N2
VP1106N5
VP1106ND
VP1110N1
VP1110N2
VP1110N5
75w 50
VP1106ND
VP1110ND
VP11A
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Untitled
Abstract: No abstract text available
Text: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)
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VP11A
VP1106N1
VP1110N1
VP1106N2
VP1110N2
O-220
VP1106N5
VP1110N5
VP1106ND
VP1110ND
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Untitled
Abstract: No abstract text available
Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR
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01N80
01N100
O-251
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d3s diode
Abstract: d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6
Text: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M Package I AX14 60V 3A CD 1 •Tjl50°C • P rrsm 26.5±2 I7 ffiiE U> t w Í7+0.5 7-0 26.5±2 W °@ • 1.40 U - K m D3S 1D • S R S ÎÜ •D C /D C n y j K — P •W M , tf- h s
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Tjl50
d3s diode
d3s 57 diode
6562s
DIODE d3s
d3s schottky
d3s 05 diode
DIODE d3s 57
D3S6
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d3s diode
Abstract: No abstract text available
Text: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1906
apacit63
51193TH
X-8377
Na4225-l/3
d3s diode
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d3s diode
Abstract: DIODE d3s 2092A
Text: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage
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2SK1471
A2092A
71993TH
d3s diode
DIODE d3s
2092A
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m 43171
Abstract: 2sj307 43171
Text: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C
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2SJ307
10//S
53093TH
AX-9094
m 43171
2sj307
43171
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d3s diode
Abstract: d3s4m diode DIODE d3s
Text: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity
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J515-5
d3s diode
d3s4m diode
DIODE d3s
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2SK941
Abstract: transistor 2SK941 za sot89 d3s diode
Text: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .
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2SK941
20kfl)
O-220FL
00E3b43
O-220SM
002Bb44
2SK941
transistor 2SK941
za sot89
d3s diode
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d3s diode
Abstract: d3s schottky Ic d3s DIODE D3S 90
Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies
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22kHz
HUF75345P3
HUF75344P3
HRF3205
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
HUF75329P3
HUF75345S3/S3S
d3s diode
d3s schottky
Ic d3s
DIODE D3S 90
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D3S 50
Abstract: d3s 15
Text: Low power diodes Rectifier diodes Type V rrm O u tlin e If a v m t Ir A A MS °c 160 3 - 150 97 100 6 150 98 V br If s m tv j r'lax O u tlin e If s m 1= tv, m ax 10 ms tv. = tv, max V 200 • 03/ 800 06/ 1200 1400 1600 Controlled avalanche diodes Type V rrm
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D2S 56
Abstract: OA61 S1600 sj51
Text: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175
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DGDT33S
-62J5
S1600
D2S 56
OA61
sj51
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s
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J533-1
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diode d3s6m
Abstract: 251C
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX14 D3S6M U nit : m m W eight 1.06g Typ 60V 3A @ T Feature Z I 26.5 • T j= 1 5 C fC • Tj=150°C • P rrsm P K ^ V î/x (S ü E • P r r s m Rating 26.5 M Main Use * g m m iH N H M arking • Switching Regulator
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15ffC
J533-1)
diode d3s6m
251C
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d3s marking
Abstract: d3s diode DIODE marking S6 89
Text: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking
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Untitled
Abstract: No abstract text available
Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET L ow on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain
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PM4550J
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diode D3s
Abstract: wwS marking d3s marking d3s diode
Text: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S6M Unit-mm Weight 1.06g Typ 60V 3A cl) Feature • Tj=150°C • P rr s m T ’A ' ^ V ì ' I ' K •^ ì E 26.5 26.5 • Tj=150°C • P r r s m Rating 0> H 4- Main Use " j^ -y ^ w s ä
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SFS9634
Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
Text: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V
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-250V
SFS9634
SFS9634
p-channel 250V power mosfet
DIODE D3S 90
Power MOSFET P-Channel 250V 50A
d3s diode
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