SK80MBBB055
Abstract: No abstract text available
Text: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ## (2## 5 5 % , 1. /* , 1. -4 /6 7 : 7 6 , 1. -4 /6 = Values Units . 3 14 778 -8 1;< 78< ( ( 9 9 ! <4 >>> ? 7.4 / 778 -8
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SK80MBBB055
tp055
SK80MBBB055
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mosfet transistor
Abstract: specifications of MOSFET
Text: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ## (2## 5 5 % , 1. /* , 1. -4 /6 7 : 7 6 , 1. -4 /6 = Values Units . 3 14 778 -8 1;< 78< ( ( 9 9 ! <4 >>> ? 7.4 / 778 -8
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SK80MBBB055
mosfet transistor
specifications of MOSFET
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optocoupler P 521
Abstract: T1027 K927 VIPER50AII 63GM fs 10tm automatic transfer switch 400v circuit diagram 1N5388 4N25 BYW98-200
Text: VIPer50AIIFP / VIPer50AIISP VIPer50AIIDIP / VIPer50AII 022Y OFF LINE SMPS PRIMARY SWITCH TARGET SPECIFICATION TYPICAL POWER CAPABILITY Mains type DIP8 PowerSO-10 European 40 W (195 - 265 Vac) PENTAWATT TO-220FP 5L 50 W 10 70 W 1 US / Wide range 25 W
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VIPer50AIIFP
VIPer50AIISP
VIPer50AIIDIP
VIPer50AII
PowerSO-10TM
O-220FP
optocoupler P 521
T1027
K927
63GM
fs 10tm
automatic transfer switch 400v circuit diagram
1N5388
4N25
BYW98-200
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RV03
Abstract: SCHEMATIC DIAGRAM OF POWER factor controller DEVI A46 1336 Motorola phone schematic diagram q11 835L DIODE 100UF IRF7811 SC1144 diode u2 a97 diode u2 a54
Text: SC1144 Programmable, High Performance Multi-Phase PWM Controller POWER MANAGEMENT Description PRELIMINARY Features u Allows use of small surface mount components u Ultra fast transient recovery time u Wide frequency operating range,200Khz-2Mhz per The SC1144 is a high performance, multi-phase PWM
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SC1144
200Khz-2Mhz
SC1144
SC1144EVB
RV03
SCHEMATIC DIAGRAM OF POWER factor controller DEVI
A46 1336
Motorola phone schematic diagram q11
835L DIODE
100UF
IRF7811
diode u2 a97
diode u2 a54
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IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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16mb HIGH-SPEED ASYNCHRONOUS SRAM
Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
Text: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation
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IBM043616CHLBC
IBM041816CHLBC
16mb HIGH-SPEED ASYNCHRONOUS SRAM
IBM041816CHLBC
IBM043616CHLBC
SA37T
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16mb HIGH-SPEED ASYNCHRONOUS SRAM
Abstract: IBM041816CXLBC IBM043616CXLBC
Text: . IBM043616CXLBC IBM041816CXLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • 2.5V power supply, 1.5 VDDQ • CMOS technology • Registered addresses, controls, and data-ins • Double-data-rate and single-data-rate synchronous modes of operation
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IBM043616CXLBC
IBM041816CXLBC
16mb HIGH-SPEED ASYNCHRONOUS SRAM
IBM041816CXLBC
IBM043616CXLBC
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IBM04368CBLBC-25
Abstract: IBM04368CBLBC
Text: . IBM04368CBLBC IBM04188CBLBC 8Mb 256K x 36 & 512K x 18 SRAM Features • 256K x 36 or 512K x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate (DDR) and single-data-rate
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IBM04368CBLBC
IBM04188CBLBC
IBM04368CBLBC-25
IBM04368CBLBC
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IBM04188CXLBC-25
Abstract: IBM04368CXLBC
Text: . IBM04368CXLBC IBM04188CXLBC 8Mb 256K x 36 & 512K x 18 SRAM Features • 256K x 36 or 512K x 18 organization • Registered addresses, controls and data-ins • CMOS technology • Burst mode of operation • Double-data-rate (DDR) and single-data-rate
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IBM04368CXLBC
IBM04188CXLBC
IBM04188CXLBC-25
IBM04368CXLBC
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SA37T
Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
Text: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation
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IBM043616CBLBC
IBM041816CBLBC
SA37T
cq 721
IBM041816CBLBC
IBM043616CBLBC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74ACT563, 573 Octal D-Type Latch with 3-State Output 563: Inverting 573: Non-Inverting Features: • High Speed: tpd = 5.5ns typ. at Vcc = 5V • Low Power Dissipation: lcc = 8|iA (max.) at Ta : 25°C • Compatible with TTL Outputs: V !L = 0.8V (max.);
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TC74ACT563,
TC74ACT563
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Untitled
Abstract: No abstract text available
Text: MC74BC563 DC CHARACTERISTICS unless otherwise specified, T /\ = - 40 to + 85°C, V c c = 4.5 to 5.5 V Parameter S ym bol V CC (V) Test C ondition M in T yp* M ax U n it High Level Input Voltage V|H 2.0 — — V Low Level Input Voltage V|L - - 0.8 V Input Clamp Diode Voltage
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MC74BC563
I5-54
MC74BC564
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5ch0
Abstract: No abstract text available
Text: TOSHIBA TC74ACT564, 574 Octal D-Type Flip-Flop with 3-State Output 564: Inverting 574: Non-Inverting F e a tu r e s : • High Speed: fMAX= 180M Hz typ. at Vcc = 5V Low Power Dissipation: lcc = 8|iA (max.) at Ta = 25°C Compatible with TTL Outputs: V,L = 0.8V;
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TC74ACT564,
74F564/574
ACT564
ACT574
TC74ACT564
5ch0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMO RY IME 0 § 10T721Ä QGlôBlâ b | TC74HCT373P/F TC74HCT373P/F OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT 'T '- a t - o 7 - n The TC74HCT373 is a high speed CMOS OCTAL LATCH wi th 3-STATE OUTPUT fabricated with silicon gate C 2MOS technology.
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10T721Ã
TC74HCT373P/F
TC74HCT373P/F
TC74HCT373
o4HCT373P/F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC175F/FN/FS/FT T O SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC175F, TC74VHC175FN, TC74VHC175FS, TC74VHC175FT QUAD D-TYPE FLIP-FLOP WITH CLEAR The TC74VHC175 is an advanced high speed CMOS QUAD D-TYPE FLIP PLOP fabricated with silicon gate C2MOS
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TC74VHC175F/FN/FS/FT
TC74VHC175F,
TC74VHC175FN,
TC74VHC175FS,
TC74VHC175FT
TC74VHC175
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74ALS175
Abstract: TC74VHC175 TC74VHC175F TC74VHC175FN TC74VHC175FT TSSOP16-P-0044
Text: T O S H IB A TC74VHC175F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC175F, TC74VHC175FN, TC74VHC175FT QUAD D-TYPE FLIP-FLOP WITH Note The JEDEC SOP (FN) is not available in Japan. CLEAR The TC74VHC175 is an advanced high speed CMOS QUAD
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TC74VHC175F/FN/FT
TC74VHC175F,
TC74VHC175FN,
TC74VHC175FT
TC74VHC175
74ALS175
TC74VHC175F
TC74VHC175FN
TC74VHC175FT
TSSOP16-P-0044
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Untitled
Abstract: No abstract text available
Text: & LOW POWER HEX TTL-to-ECL TRANSLATOR SYNERGY SEMICONDUCTOR FEATU R ES SY100S324 SY101S324 D E S C R IP TIO N Max. Propagation Delay o f 1.5ns. The SY100/101S324 is a hex translator, designed to convert TTL logic levels to 100K ECL levels. The inputs are TTL
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SY100S324
SY101S324
-55mA.
SY100S324:
SY101S324:
SY100/101S324
SY100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74HCT273AP/AF/AFW Octal D-Type Flip-Flop With Clear The TC74HCT273A is a high speed CMOS OCTAL D-TYPE FLIP-FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HCT273AP/AF/AFW
TC74HCT273A
90MHz
TC74HC/HCT
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Untitled
Abstract: No abstract text available
Text: M m o to r o la M ilitary 54F534 O ctal D-Type Positive Edge-Triggered Flip-Flop With 3-State Inverted O utputs ELECTRICALLY TESTED PER: MIL-M-38510/34106 A V AILA BLE A S: The 54F534 is a high-speed, low -pow er octal D-type flip-flop featuring separate D-type inputs for each flip-flop and 3-state outputs for bus ori
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54F534
MIL-M-38510/34106
54F534
JM38510/34106BXA
54F534/BXAJC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74LVQ374F/FW/FS C 2M O S L o g ic Octal D - Type Flip Flop With 3-State Output The TC74LVQ374 is a high speed CMOS OCTAL FLIP FLOP with 3-STATE OUTPUT fabricated with silicon gate and dou ble-layer metal wiring C2MOS technology. Designed for use in 3.3 Volt systems, it achieves high
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TC74LVQ374F/FW/FS
TC74LVQ374
LG12740896
DD30241
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42-pin D 1989
Abstract: No abstract text available
Text: 1 ADC-32/ADC-33 □ M n 8-Bit, 150 MHz Flash A/D Converter PRODUCT DATA FEATURES 8-Bit resolution 1/2 LSB Integral non-linearity 150 MHz conversion rate 100 MHz input bandwidth Low power consumption <2.7W Output latch and buffer APPLICATIONS High speed data acquisition
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ADC-32
ADC-33
ADC-32/-33
ADC-32/ADC-33
DS-0199
42-pin D 1989
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 16-BIT REGISTER 3-STATE IDT54/74FCT16374T/AT/CT IDT54/74FCT162374T/AT/CT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Common features: The ID T 5 4 /7 4 F C T 16 3 7 4 T /A T /C T and ID T 54/ 74FCT162374T/AT/CT16-bit edge-triggered D-type registers
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16-BIT
IDT54/74FCT16374T/AT/CT
IDT54/74FCT162374T/AT/CT
74FCT162374T/AT/CT16-bit
16-bit
IDT54/74FCT16374T/AT/CT,
162374T/AT/CT
MIL-STD-883,
16374T
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Untitled
Abstract: No abstract text available
Text: cP August 1990 Edition 1.0 FUJI' - DATA SHEET = ' MB40568 1-CHANNEL 8-BITA/D CONVERTER 1-CHANNEL 8-BIT LOW POWER VIDEO A/D CONVERTER ON-CHIP CLAMP CIRCUIT The Fujitsu MB40568 is a low power ultra-high speed video A/D converter fabri cated with Fujitsu Advanced Bipolar Technology. The MB40568 also adopts the
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MB40568
MB40568
D-6000
AV0040-908A
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