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    EIAJ-4

    Abstract: 7 pin mini din sp9812 sa06n12 diode sod 106 6 pin mini din power din plug U587 ferrite R40 8P 63
    Text: EFD15 T2 L1 A +Vi T1 EE B 5 0504 C2 1812 C1 1812 D12 0805 SOD-106 C3 1812 3 -Vi R12 D1 UMD2 2 R6 1206 R9 0603 C4 1210 1206 R30 1206 8,9 D5 SOD-123 C35 U8 SOT-89 1 3 C20 C21 D4 D4 1210 1210 2 0805 C31 0805 D9DPAK DZ2 R59 1206 SOD-106/0805/1206 C32 0805 -Vo


    Original     		PDF EFD15 OD-106 OD-123 OT-89 OD-106/0805/1206 OT-23 EIAJ-4 7 pin mini din sp9812 sa06n12 diode sod 106 6 pin mini din power din plug U587 ferrite R40 8P 63

    mitac

    Abstract: fds6612 LI220 PC521 fds6690 PU501 PC505 Pt-211 PC502 PC503
    Text: PR1 1 2 PWR_ON 100K/NA 0603B PU1 HA178L12UA SOT89N PD1 2 2 PC2 1U 0805C 5% 1 PC4 0.1U 0603 50V 2 GND +12V 1 2 1 1 OUT PC3 1U 1206 25V PT1 1 2 18UH 5 6 7 8 2 1 1 1 1 + PC520 150U/NA 7343 6.3V 1 2 A 3 PC10 + 220U 6.3V 20% 2 PU501 SB3052P PC11 + 220U 6.3V 20%


    Original     		PDF 100K/NA 0603B HA178L12UA OT89N LI2207 PD503 BAS32L PC501 PC504 PD502 mitac fds6612 LI220 PC521 fds6690 PU501 PC505 Pt-211 PC502 PC503

    2n3906 sot23

    Abstract: 2N5551 SOT23 PMBT5551, PMST5551 PMBS3904, PMSS3904 PMBT5401, PMST5401 2n3904 sot23 philips 2n5401 2n3904 PMBT2222 PMBT3906 PMBS3906
    Text: Semiconductors Date of release: February 2005 Switching transistors portfolio Package SOT223 SC-73 SOT89 (SC-62) SOT23 1250 mW 1300 mW 250 mW Configuration IC (mA) VCEO (V) 100 hFE min. hFE max. fT min. (MHz) 12 40 120 400 20 BSV52 40 100 300 180 1200 PMBS3904


    Original     		PDF OT223 SC-73) SC-62) OT457 SC-74) PMBS3904 BSV52 OT323 SC-70) PMSS3904 2n3906 sot23 2N5551 SOT23 PMBT5551, PMST5551 PMBS3904, PMSS3904 PMBT5401, PMST5401 2n3904 sot23 philips 2n5401 2n3904 PMBT2222 PMBT3906 PMBS3906

    C4547

    Abstract: broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS
    Text: Si3232 DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <65 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude,


    Original     		PDF Si3232 GR-909 Hz/16 C4547 broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS

    SI3201-FS

    Abstract: transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Performs all BORSCHT functions  Software-programmable signal generation and audio processing Software-programmable internal balanced


    Original     		PDF Hz/16 Si3210) 16-bit SI3201-FS transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551

    sot-23 marking code 2fn

    Abstract: transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Si3210) 90VPK sot-23 marking code 2fn transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER

    transistor dtx 360 mosfet

    Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Hz/16 GR-909 transistor dtx 360 mosfet transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild

    Si3201-gs

    Abstract: transistor SMD 3906
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs transistor SMD 3906

    Untitled

    Abstract: No abstract text available
    Text: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:


    Original     		PDF Si3232

    Untitled

    Abstract: No abstract text available
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     100% programmable global solution Performs all BORSCHT functions DC-DC controller provides tracking battery from a 3.3–35V input Si3210


    Original     		PDF Si3210) 90VPK

    K934

    Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
    Text: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,


    Original     		PDF 950G/K 950GU 90/56Kbps K2934L UL1950 K2935U/ K2936U USB1300 220PF 73M2901 K934 CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR

    HEADER10X2

    Abstract: PE12864LRF PE12864 smd m7 PE12864LRF-018-H-Y1 M7 smd MC93CV402 SMD a5 p77 SMD d5 sot89 SMD a5 p80
    Text: 4 3 OnChip Debugger VDD 2 4 6 8 10 VDD VDD_CORE R33 0/3216 1 2 SPK- VDD_IO SPK2+ R34 0/3216 1 2 OCD_CONNECTOR PLLC GR5 GR6 SEG7 SEG6 SEG5 VDDIO9 44 43 42 41 40 39 38 37 36 35 34 1 VDD 2 VDD 33 32 31 30 29 28 27 26 25 24 23 SPKSPK+ VDD_PWM nMC93CV401_RESET0 2


    Original     		PDF MOLEX5267-2 20K/1608 P24/GR4 P23/GR3 P22/GR2 P21/GR1 P20/GR0 P01/SDO P02/SDI HEADER10X2 PE12864LRF PE12864 smd m7 PE12864LRF-018-H-Y1 M7 smd MC93CV402 SMD a5 p77 SMD d5 sot89 SMD a5 p80

    b17 c144

    Abstract: mitac mitac 6120 JT23
    Text: 5 3 G_ST0 3 G_ST1 3 G_ST2 3.3V FOR LR PRO 2.5V FOR MOBILITY +5V U13 VOUT TC55RP3302EMB SOT89N C97 3,20 3,20 3,20 3,20 3,20 C96 CHECK CURRENT 2 2 VIN GND 2 1 1 1 3 10U 1206 G_SBA[0.7] G_RBF# G_ADSTBA G_ADSTBB G_SBSTB 1 G_SBA[0.7] G_RBF# G_ADSTBA G_ADSTBB


    Original     		PDF 0603B SD411666500001 b17 c144 mitac mitac 6120 JT23

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    DN82

    Abstract: FZT493 start up circuit ZXMN0545G4 zetex transistors MOSFET 4446 FMMT459 ZVN2120G ZXMN10A07F switch mode supply controller bipolar
    Text: DN82 Start up switches for switch mode power supplies Andy Aspinall, Systems Engineer, Zetex Semiconductors The use of Zetex medium voltage MOSFETS for switch mode power supplies High voltage start up Many topologies of switching power supplies power the control circuits from an auxiliary tap on


    Original     		PDF

    Generator 12V 220V 50Hz

    Abstract: capacitor 100nf 250v polyester 39NF CSB400J capacitor 152j capacitor 100nf 250v aluminum TP2524N8 TN2524 BAV99 PLCC-44 molex
    Text: 20 REN Ring Generator 20 REN Ring Generator HV441DB2 Introduction Specifications The Supertex HV441 is a power-efficient, switch-mode ring generator IC requiring minimal external components. 20Hz ±2Hz Ringing Frequency 58VRMS ±5% Ringing Amplitude The HV441DB2 demo board contains all the circuitry necessary to drive a 20 REN North American ringer load. Simply


    Original     		PDF HV441DB2 HV441 58VRMS HV441DB2 HV441, AN-H35. 24AWG, HV441PJ TP2524N8 TP2522N8 Generator 12V 220V 50Hz capacitor 100nf 250v polyester 39NF CSB400J capacitor 152j capacitor 100nf 250v aluminum TP2524N8 TN2524 BAV99 PLCC-44 molex

    lm324 applications

    Abstract: Absolute Value Circuit lm324 data sheet LM324 LND150N8 two transistors
    Text: LND1 Series Applications LND1 Series Application Note AN–D11 3 ± 500 Volt Protection Circuit Introduction Circuit Description A ±500V protection circuit for low voltage high impedance measuring instruments is shown in Figure 1. The protection is accomplished by limiting the amount of current going into the


    Original     		PDF 500VDC LND150N8, OT-89 600mW. 600mW lm324 applications Absolute Value Circuit lm324 data sheet LM324 LND150N8 two transistors

    Si3215-FM

    Abstract: 31353R-02 SO16E Package Silabs CMR1U-02M fsync in PCM js1 sot23 SO16E DB15F JS3 SOT23
    Text: Si321xPPQx-EVB EVALUATION BOARD FOR THE Description S i 3 2 1 0 / 1 5 / 1 6 P RO SLIC  This document describes the operation of the Silicon Laboratories ProSLIC® device evaluation platform. The devices supported by this document are the Si3210/15/ 16 and Si3210M/15M/16M; both Si3201 and discrete


    Original     		PDF Si321xPPQx-EVB Si3210/15/ Si3210M/15M/16M Si3201 25-pin Si3215-FM 31353R-02 SO16E Package Silabs CMR1U-02M fsync in PCM js1 sot23 SO16E DB15F JS3 SOT23

    an-D11

    Abstract: LM324 LND150N8 two transistors
    Text: AN-D11 Application Note ±500 Volt Protection Circuit 100K Introduction 100K A ±500V protection circuit for low voltage high impedance measuring instruments is shown in Figure 1. The protection is accomplished by limiting the amount of current going into


    Original     		PDF AN-D11 500VDC LND150N8 LND150N8, OT-89 an-D11 LM324 LND150N8 two transistors

    Si3215-FM

    Abstract: si3201-FS SI3210M-FM 31353R-02 TDK NLC322522T-470K si3210-fm Si3216-FM intl PC MOTHERBOARD CIRCUIT diagram CMR1U-02M Si3216
    Text: Si321xPPQx-EVB EVALUATION BOARD FOR THE Description S i 3 2 1 0 / 1 5 / 1 6 P RO SLIC „ This document describes the operation of the Silicon Laboratories ProSLIC® device evaluation platform. The devices supported by this document are the Si3210/15/ 16 and Si3210M/15M/16M; both Si3201 and discrete


    Original     		PDF Si321xPPQx-EVB Si3210/15/ Si3210M/15M/16M Si3201 Si3215-FM si3201-FS SI3210M-FM 31353R-02 TDK NLC322522T-470K si3210-fm Si3216-FM intl PC MOTHERBOARD CIRCUIT diagram CMR1U-02M Si3216

    1N4148 SMD PACKAGE

    Abstract: 1N4148 sod123 100uH SMD 105k 250v capacitor film 105k 250v 1N4148 DL-35 PNP 200V 2A SOT89 Diode Equivalent 1n4148 TVS DIODE 6K 1N4148_SOD-123
    Text: HV9906DB4 Off-Line Current Source Controller Introduction The HV9906DB4 provides a constant current of 750mA. It contains all circuitry necessary to demonstrate the features of the HV9906 second order power supply controller. The power converter topology of the demo board consists of an input buckboost stage and an output buck stage. The output


    Original     		PDF HV9906DB4 HV9906DB4 750mA. HV9906 SMD0805 1N4148 SMD PACKAGE 1N4148 sod123 100uH SMD 105k 250v capacitor film 105k 250v 1N4148 DL-35 PNP 200V 2A SOT89 Diode Equivalent 1n4148 TVS DIODE 6K 1N4148_SOD-123

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    TN0602N3

    Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"

    TN0602N3

    Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
    Text: TN06 Series Application Note AN–D9 3 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001