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    D45C6 TRANSISTOR Search Results

    D45C6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D45C6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    New Jersey Semiconductor

    Abstract: No abstract text available
    Text: Js.ii.EUu <^£.mi-L.onaactoi I/-TOaucti,LJna. C/ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors D45C6 DESCRIPTION • Low Saturation Voltage • Good Linearity of hFE


    Original     		D45C6 D44C6 O-220C -50mA -100mA -20mA New Jersey Semiconductor PDF

    tip420

    Abstract: BU522B tip420 transistor BD243 TIP41/TIP42 BD535 transistors d44c8 D44C6 B0243C BD53
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Switching lcCont V c E O (sus) Amps Max Volts Min 4 45 Device Type NPN D44C6 D45C6 2N6124 BD534 2N6121 BD533 60 PNP BD535 2N6122 D44C7 BD536 2N6125 D45C7 D44C8 D45C8


    OCR Scan     		O-220AB D44C6 2N6121 BD533 D45C6 2N6124 BD534 BD535 2N6122 D44C7 tip420 BU522B tip420 transistor BD243 TIP41/TIP42 transistors d44c8 B0243C BD53 PDF

    5P 5P

    Abstract: No abstract text available
    Text: NATL SEMICOND D IS C R E T E 1 1 E 5 | =501130 0 0 3 7 1 A S T I This Material Copyrighted By Its Respective Manufacturer 1 5 10* 55 10 25 TO-220 (37 45 5 10’ 55 20 40 D45C6 TO-220 (37) 45 5 10* 55 D45C7 60 5 10* Its TO-220 (37) D45C8 TO-220 (37) 60 5


    OCR Scan     		bSQ1130 T-33-01 5P 5P PDF

    B0415

    Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
    Text: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B


    OCR Scan     		BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 PDF

    D44C4

    Abstract: D45C4 D44C6 D44C5
    Text: Power Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A N N N P P BD240B BD241 BD241A BD241B BD242 H te VcEOoi Ic V Ceo W) (A) (V) TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 2 2 2 2 2 45 60 80 45 60 15 15 15 15


    OCR Scan     		BD239 BD239A BD239B BD240 BD240A BD240B BD241 BD241A BD241B BD242 D44C4 D45C4 D44C6 D44C5 PDF

    D45C5

    Abstract: D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR
    Text: Silicon Power Pac ELECTRONIC INACTIO N- smmomm Transistors “ Color Molded” The General Electric D45C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


    OCR Scan     		O-220 D45C5 D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR PDF

    d45c6 transistor

    Abstract: GE D45C2 d44c3 GE D45C5 transistor D45C5 D45C2 ge d45c8 D45C9 D45C4 08/bup 3110 transistor
    Text: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES GE Type NPN PNP D44C1 - - D45C1 D 44C 2 Pt T c = 25°C Max. W 311.0 30.0 V CEO Min. (V ) 30 - 30 h FE! 200 m A •c Cont. (A) @ IV, ¿.0 25 - 25 _ -¿.0 M in. M ax. hFE @ 1 V , 1A 30 4 .0 40 120 71)


    OCR Scan     		200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 d45c6 transistor GE D45C2 GE D45C5 transistor D45C5 ge d45c8 D45C9 08/bup 3110 transistor PDF

    d44c3

    Abstract: GE D44C9 D44C6 D44C5 D45C4 e 229 IC-229 D44C1 D44C2 D44C4
    Text: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES G E Type N PN PN P D44C1 - - D45C1 D44C3 - 311.0 30.0 V C EO Min. V 30 - 30 •c Cont. (A ) @ IV , ¿.0 -¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 25 _ 30 4.0 40 120 71) D45C2 30.0 -30


    OCR Scan     		200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 GE D44C9 D44C6 e 229 IC-229 PDF

    bd 241a transistor

    Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
    Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A


    OCR Scan     		T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11 PDF

    044H8

    Abstract: D44C5 D43C8 D44C6
    Text: , THOflSON/ D I S T R I B U T O R SflE D TCSK Bipolar Power Transistors General Purpose Continued v C E <sat)-V h FE T y p e N o. v CEO<s u s > v C E S (s u s ) V V Pt D 4 3 C FAM L Y ( p - n - p ) D43C1 D43C 2 D43C 3 D43C 4 D43C 5 D43C 6 D43C 7 D 43C 8


    OCR Scan     		D43C1 D43C2 D43C3 D43C4 D43C5 D43C6 O-202 D43C7 D43C8 D43C9 044H8 D44C5 D44C6 PDF

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan     		2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224 PDF

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan     		2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224 PDF

    D44C5

    Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
    Text: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0


    OCR Scan     		200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 ge d45c8 GE D44C9 D44C6 TL3019 D44* general electric npn to-220 d44c9 D44* npn PDF

    JE230

    Abstract: JE370
    Text: NATL SEI1IC0ND {DISCRETE} NATL SEMICOND, DE tSDllBD □□3S4bO 7 28C 3 5 4 6 0 (D ISCRETE 7 p g; o< « HI -s U< IU JCs : in to »-‘ do in in in in »- • r-' O T-’ o O in in in in *- I Wo t-* o o o in o in r i *-* CV T-’ 03 > i S-« r- ff> c*j O


    OCR Scan     		2N5193 2N5194 2N5195 2N6107 2N6109 2N6110 O-126 OE252 MJE253 MJE254 JE230 JE370 PDF

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement PDF

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


    Original     		MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139 PDF

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 PDF

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


    Original     		2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent PDF

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference PDF

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


    Original     		BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100 PDF

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100 PDF

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100 PDF

    BU108

    Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —


    Original     		MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100 PDF

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100 PDF