9N20
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPD-D5 1. Scope The present specifications shall apply to an SJPD-D5. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 091120 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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UL94V-0
10msec.
1msect10msec
9N20
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IXYS DSA 1-16D
Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
Text: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9
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D5-10
D5-14
IXYS DSA 1-16D
DIODE DSA 1-16D
DO-205ACDO-30
pwm INVERTER welder
diode avalanche DSA VRRM 2300
1718a
110-12F
IXYS DSA
DSI 35-08A 117 L
DS35Q
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Untitled
Abstract: No abstract text available
Text: SO D5 23 PESD5V0X1UAB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a
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OD523
SC-79)
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advantage of fm transmitter two stage
Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
Text: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by
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AN277,
AN277
advantage of fm transmitter two stage
audio bluetooth transmitter 3.5mm
AN277
ESD Diodes
Mifare* capacitor inductor
epcos mip i
mobile 3.5mm jack
ESD3V3S
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STM5-1-2008
Abstract: No abstract text available
Text: SO D5 23 PESD5V0X1UB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a
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OD523
SC-79)
STM5-1-2008
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Offline Buck Converter with Tapped Inductor Offers Improved Performance
Abstract: AND8226 AND8318 tapped inductor high voltage buck converter DN06002 Choke Coil Winding buck freewheeling diode 5A offline switchmode -flyback 1N4007 MUR160
Text: AND8318/D Offline Buck Converter with Tapped Inductor Offers Improved Performance Prepared by: Frank Cathell http://onsemi.com APPLICATION NOTE Introduction pulse width modulation in U1. Freewheeling diode D5 provides for current continuity in L2 when the MOSFET in
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AND8318/D
Offline Buck Converter with Tapped Inductor Offers Improved Performance
AND8226
AND8318
tapped inductor high voltage buck converter
DN06002
Choke Coil Winding buck
freewheeling diode 5A
offline switchmode -flyback
1N4007
MUR160
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"ESD Protection"
Abstract: AN192 ESD protection symbian C166 ESD5V3S1B-02LS TVS 0201 Diode latest gadgets smd 02l
Text: ES D5 V3 S 1B - 02L R H / -02 LS ES D5 V3 S 1U - 02L R H / -02 LS Effici ent a nd cos t ef fec ti ve E S D prot ectio n for elec t r onic in ter f ac es ES D pro te ction for Audi o s ys te ms and f or ge neral int er fac es Applic atio n N ote A N 192 Revision: 1.0, 2010-02-10
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ESD5v3s1b-02ls
AN192,
AN192
"ESD Protection"
AN192
ESD protection
symbian
C166
TVS 0201 Diode
latest gadgets
smd 02l
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M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
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MC14030
Abstract: 10k trimpot 240v n-channel depletion mosfet DIODE in4005 01UF 10k trimpot resistor in4005 IN4005 diode data sheet Depletion-Mode MOSFET IN4005 diode
Text: AN-D10 Application Note Off-Line Compact Universal Linear Regulator Introduction the 120VAC input line. D5 does not conduct during normal operation. An off-line compact universal linear regulator is shown in Figure 1. The regulating device is the Supertex LND150N3.
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AN-D10
120VAC
LND150N3.
170VDC
MC14030
10k trimpot
240v n-channel depletion mosfet
DIODE in4005
01UF
10k trimpot resistor
in4005
IN4005 diode data sheet
Depletion-Mode MOSFET
IN4005 diode
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ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
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ixys dsei
Abstract: IRM 1200 80D-5
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-12P
31-12P
ixys dsei
IRM 1200
80D-5
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apm28
Abstract: A104 diode
Text: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2804QA
-20V/-2
500mA.
APM2804
JESD-22,
apm28
A104 diode
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4148CA
Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Text: Connection Diagrams 3 4148 3 3 3 4148SE 5H 1 2 1 2 1 4148CC3 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 SOT-23 1 1 2NC 2 1 2 3 4148CA 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM
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4148SE
4148CC3
MMBD4148
MMBD4148CA
MMBD4148CC
MMBD4148SE
OT-23
4148CA
4148CA
4148SE
MMBD4148
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Untitled
Abstract: No abstract text available
Text: LSM-10A D5 Models www.murata-ps.com Single Output, Non-Isolated, 5VIN, 0.8-3.3VOUT, 10A, DC/DC's in SMT Packages NOT RECOMMENDED FOR NEW DESIGNS Typical Unit Features • Step-down buck regulators with industry-standard SMT footprint ■ 5V input 4.5-5.5V range
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LSM-10A
30mVp-p
LSM10A-D5
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Amp. mosfet 1000 watt
Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
Text: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi michele.sclocchi@nsc.com Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T
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LM5000-3
1000p
LM5000
50kHz
Amp. mosfet 1000 watt
transformer less power supply 12 volt 3A
1000 watt ferrite transformer
mathcad flyback design
Amp. mosfet 500 watt
mosfet 1000 amper
transistor m 9587
Diode fast 8 amper
RM6S/CSVS-RM6S/LP-1S-8P
Switchmode power supply handbook
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2x101-06 200A
Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-06P
Con1000
2x101-06
2x101-06 200A
2x101-06
DSEI 2X101-06
ixys dsei 2x101
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Untitled
Abstract: No abstract text available
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-12P
2x101-12
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QR200
Abstract: No abstract text available
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-06P
2x101-06
QR200
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D517
Abstract: 3D-53 Discrete Rectifier 2X28 d519 D565
Text: QIXYS Discrete Rectifier and Avalanche Diodes1 Contents Package style 1 I 1200 A • 2.3 • 2 3.6 Page 3 4 2x11 • • • • 5 11 • • • 5 25 6 7 2x28 10 11 30 5 49 1 • • DS 1 DSA 1 D5-2 DS 2 DSA 2 D5-3 • DSP 8.A DSP 8.AS D5-5 DS 9 DSA 9
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DSI17
DSAI17
DSI30-
DS1110
DSA1110
D5-10
D5-11
D5-12
D5-14
D5-15
D517
3D-53
Discrete Rectifier
2X28
d519
D565
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ir d10
Abstract: AMA780 ir d10 d10 D10D26
Text: Diodes • Schottky Barrier Diodes SBD (For Small Current) (continued) Application <M ) 30 VF max. (V) 0.55 15 Mini (3 pins) D10 AMA791 * 30 0.55 15 Mini (3 pins) D10 AMA792 * 30 0.55 15 S Mini (3 pins) D5 A M A792W A * 30 0.55 15 S Mini (3 pins) D5 A M A792W K *
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AMA786WK
AMA791
AMA792
A792W
AMA793
MA774
MA775
AMA785
AMA787
ir d10
AMA780
ir d10 d10
D10D26
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DO-34
Abstract: MA723 MA782 ma10701 AMA785 AMA786WK AMA787 AMA791 AMA792 AMA792WA
Text: Diodes • Schottky Barrier Diodes SBD (For Small Current) (continued) Application (mA) 0.55 15 Mini (3 pins) D10 A M A 791 * 0.55 15 Mini (3 pins) D10 S Mini (3 pins) D5 AM A792 * 30 0.55 15 A M A 792W A *• 30 0.55 15 S Mini (3 pins) D5 A M A 792W K 30
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AMA786WK
AMA791
AMA792
AMA792WA
AMA792WK
AMA793
MA774
DO-34
MA775
MA723
MA782
ma10701
AMA785
AMA786WK
AMA787
AMA791
AMA792
AMA792WA
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IEC-1000-4-2
Abstract: diode 6e
Text: FTZ5.6E Zener diode FTZ5.6E •Applications • External dimensions Units: mm Noise suppression on signal line Constant voltage control •Features 1) Small surface m ounting type.(SM D5) 2) High reliability.
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SC-74A
002452b
IEC-1000-4-2
D05H527
71CH1
IEC-1000-4-2
diode 6e
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1AV Series
Abstract: ACT374
Text: _ Technical Data CD54/74AC374, CD54/74AC534 CD54/74ACT374, CD54/74ACT534 Advance Information o - 02 - 03 - 04 - OS - 06 -07 15 0E - 1 CP - 374 534 — 00 00 1 0 0 -D1 -0 2 -D3 -0 4 -D5-0 6 -D7 -
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CD54/74AC374,
CD54/74AC534
CD54/74ACT374,
CD54/74ACT534
CD54/74AC/ACT374
CD54/74AC/ACT534
54/74A
54/74AC
CD54/74ACT374
CD54/74ACT534
1AV Series
ACT374
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l2501
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDS166U TECHNI CAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Small package : USV. • Low forward voltage. D5 • Fast reverse recovery time. • Small total capacitance. DIM M ILL IM E T E R S
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KDS166U
l2501
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