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    D6 TYPE DIODE Search Results

    D6 TYPE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    D6 TYPE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D6 type diode

    Abstract: a2s130 diode d6 diode 1600 rectifier D6 DIODE DATASHEET Usha Rectifier diode
    Text: Rectifier Diode D6 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes. Type No. D6/02 D6/04 D6/08 D6/12 D6/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV)


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    D6/02 D6/04 D6/08 D6/12 D6/16 Ap6/16 D6 type diode a2s130 diode d6 diode 1600 rectifier D6 DIODE DATASHEET Usha Rectifier diode PDF

    MDD 500-22N1

    Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●


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    D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1 PDF

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


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    STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor PDF

    brake rectifier motor

    Abstract: dc chopper circuit ANS5 diode x18
    Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9


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    brake rectifier motor

    Abstract: DIODE N7
    Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features


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    diode ZENER C2 smd

    Abstract: capacitor 100nF capacitor 100nf 50v Diode zener smd d4 SMD ZENER DIODE d7 smd L2 diode 805 smd resistor SMD ZENER DIODE d4 Zener diode 18V SOD80 smd 1a 400v diode
    Text: STMicroelectronics: STEVAL-ISA005V1 QTY Reference 1 CON1 1 2 1 1 1 2 2 1 2 1 1 1 1 1 1 2 1 1 CON2 C1, C2 C3 C4 C6 C7, C8 D1, D2 D3 D4, D5 D6 D7 L1 L2 R1 R3 R5, R6 U1 U2 May-07 Part Description Mfg P/n Clamp, 2 pole, horizontal, type 94, 380V 15A connector


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    STEVAL-ISA005V1 May-07 940-T-DS/02 940-T-DS/03 TC04RKMG400VB4R7M TC04RLXY35VB56M TC04RKME50VB10M 100nF ZMM13 RGL34J diode ZENER C2 smd capacitor 100nF capacitor 100nf 50v Diode zener smd d4 SMD ZENER DIODE d7 smd L2 diode 805 smd resistor SMD ZENER DIODE d4 Zener diode 18V SOD80 smd 1a 400v diode PDF

    ups D6-11

    Abstract: MKI 50-06 A7 A7t diode 20 mki 5
    Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 T2 14 T6 D2 D6 11 T 3 12


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    MWI5006A7 20110119a ups D6-11 MKI 50-06 A7 A7t diode 20 mki 5 PDF

    Untitled

    Abstract: No abstract text available
    Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 14 T6 T2 D2 D6 11 T 3 12


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    MWI5006A7 20110119a PDF

    KDP620UL

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)


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    KDP620UL ULP-12 100MHz KDP620UL PDF

    diode D5 marking

    Abstract: KDP622UL marking d6 MARKING D6 diode IR 106 D1 D6 type diode
    Text: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage


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    KDP622UL ULP-12 100MHz diode D5 marking KDP622UL marking d6 MARKING D6 diode IR 106 D1 D6 type diode PDF

    KDP620UL

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage


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    KDP620UL ULP-12 100MHz KDP620UL PDF

    d3 marking

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 B E ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)


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    KDP622UL ULP-12 100MHz d3 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage


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    KDP620UL ULP-12 100MHz PDF

    marking d4

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDP630UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. TENTATIVE FEATURES ・Array type 6 Diode in one package ・Low Capacitance A ・Low Series resistance D 6 B E 1 12 TOP VIEW C 7 BOTTOM VIEW


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    KDP630UL ULP-12 100MHz marking d4 PDF

    CC25-12GWA

    Abstract: 140D7
    Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12GWA GREEN Features Description z0.25 INCH DIGIT HEIGHT The Green source color devices are made with Gallium zLOW CURRENT OPERATION. Phosphide Green Light Emitting Diode. zEXCELLENT CHARACTER APPEARANCE.


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    25INCH) CC25-12GWA DSAA5311 MAY/22/2007 CC25-12GWA 140D7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CA25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.


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    25INCH) CA25-12CGKWA DSAK2814 SEP/28/2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.


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    25INCH) CC25-12CGKWA DSAK2815 SEP/28/2010 PDF

    D6 type diode

    Abstract: D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26
    Text: Rectifier Diode Modules Contents Package style V rrm/V oRm V Type Page MDO 26 D6-2 MDD 44 D6-5 S Diode Modules 1999 IXYS All rights reserved MDD 56 D6-8 MDD 72 D6-11 MDD 95 D6-14 MDD 142 D6-17 MDD 172 D6-20 MDD 220 D6-23 MDD 250 D6-26 MDD 255 D6-29 MDD 310


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    D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 D6 type diode D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance


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    HN2D01F HN2D01F PDF

    Leistungsdiode

    Abstract: Diodes de redressement
    Text: Kleine Leistungsdioden Low power diodes Diodes de faible puissance Gleichrichterdioden Typ Rectifier diodes Type Vrrm I fa v m Ifs m V Outline Dimension A 160 O J ÎI *1200 D6 / ‘v Typ 1400 ' a ï i i f e . i r . If s m tA = 4 5 °C V A •• < 1600


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    74AC

    Abstract: TC74VHCT573A TC74VHCT573AF TC74VHCT573AFT TC74VHCT573AFW
    Text: TOSHIBA TC74VHCT573AF/AFW/AFT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74VHCT573AF, TC74VHCT573AFW, TC74VHCT573AFT OCTAL D-TYPE LATCH WITH 3 - STATE OUTPUT TRUTH TABLE [ [ C [ [ [ [ [ [ [ < OE 1 DO 2 D1 3 D2 4 D3 5 D4 6 D5 7 D6 8


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    TC74VHCT573AF/AFW/AFT TC74VHCT573AF, TC74VHCT573AFW, TC74VHCT573AFT TC74VHCT573A 20PIN 200mil OP20-P-300-1 685TYP 74AC TC74VHCT573AF TC74VHCT573AFT TC74VHCT573AFW PDF

    ZR500

    Abstract: zr2000 ZR12
    Text: Power S em icon du ctor Devices Soft Recovery Diodes—Disc Type Ip AV Model V rrm @Tc=1051C A IpSM V fm @50HZ V ta ­ Qrr Rtlyc Ty) it • PC V/W V 0.080 150 D6 0.040 150 D7 0.030 150 D9 0.021 150 D ll Outline @IpM kA V A ZR200/18 200 1800 2.5 2.0 600 1.0


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    ZR200/18 ZR300/25 ZR500/20 ZR600/16 ZR500/45 ZR800/36 ZR1000/25 ZR1000/45 ZR1200/36 ZR1500/25 ZR500 zr2000 ZR12 PDF

    Power Diodes

    Abstract: No abstract text available
    Text: Low power diodes Rectifier diodes Type O utline I favm trr tv, max A A US °C 400 800 160 3 - 150 112 400 • 800 1200 1400 1600 100 6 150 114 I favm tv j max O utline A °c If s m V rrm î = 10 ms tv] = tv j max V D 3 / ■ Controlled avalanche diodes D6/


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    D3S 50

    Abstract: OA61 AEG Diode
    Text: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal


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    005145b I-10m lF-lR-10mA -dlF/dt-15A/ns D3S 50 OA61 AEG Diode PDF