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    D64DV6 Search Results

    D64DV6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D64DV6 General Electric Power Transistor Data Book 1985 Scan PDF

    D64DV6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    GaN 20A

    Abstract: No abstract text available
    Text: D64DV5,6,7 D64EV5,6,7 File Number 2361 50-Ampere N-P-N Darlington Power T ransistors TERMINAL DESIGNATIONS c FLANGE Features: • High speed t$ < 5.0 /jsec., tr < 3.0 Aisec. ■ High voltage: 400-500 Vq ^q POWER TRANSISTORS ■ High gain: 50 minimum @ 50 amperes, I q


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    D64DV5 D64EV5 50-Ampere D64DV D64EV T0-204AE GaN 20A PDF

    D64DV5

    Abstract: D64EV tf 115 250v 2a xc50
    Text: HIGH SPEED D64DV5L6.7 D64EV56.7 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 50 AMP, 180 WATTS These devices are designed for use in high-speed switching applications, such as off-line switching power supplies, PWM D C & A C motor control, U P S systems, ultrasonic equipm ent


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    D64DV5L6 D64EV56 D64DV D64EV T0-204AE EMI01 D64DV5 D64EV tf 115 250v 2a xc50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICONÎ SECTOR SbE D • File Number 2361 M3DBB71 DGMGÛH? «HAS D64DV5j6,7 D64EV5,6,7 “ 50-Ampere N-P-N Darlington Power Transistors 3 5 - Z ^ TERMINAL DESIGNATIONS c E FLANGE Features: ■ High speed ts < 5.0 //sec., tr < 3.0 fjsec, ■ High voltage: 400-500 Vq ^ q


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    M3DBB71 D64DV5j6 D64EV5 50-Ampere D64DV D64EV D64DV5 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    d64dv

    Abstract: D64EV6
    Text: _ TH OM SON / D I S T R I B UT OR SflE D Bipolar Power Transistors Darlington Power Transistors • ^05^073 0005735 0T3 TCSK Continued hFE IH o> > TO-220AB -10 -10 -10 -40 -60 -80 1000 min. 1000 min. 1000 min. -5 -5 -5 -5 -5 -5 50 50 50 50 50 50 400


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    Ljfl73 D45E1 D45E2 O-220AB D45E3 D64DV D64DV5 D64DV6 O-204AE/ D64DV7 D64EV6 PDF