LT1693
Abstract: CTX02 FMMT3904TA D914 diode 410EL linear 2110 so8 CR16-2052FM diode zener c29 LT1693-1B Thermalloy
Text: DC259 DESCRIPTION Demo Board DC259A provides an isolated 3.3V or 5Vout at 10A from a 36 to 72VDC source. The DC259A’s small size 2.4in x 2.3in x 0.5in and industry standard pin-out allows rapid evaluation in new or existing designs. Gerber files are available upon request. Synchronous output rectifiers result in high-efficiency
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DC259
DC259A
72VDC
636-440-A-0
P6515B
LT1693-1B
LT1693
CTX02
FMMT3904TA
D914 diode
410EL
linear 2110 so8
CR16-2052FM
diode zener c29
LT1693-1B
Thermalloy
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HVR 2-12
Abstract: HV9805 samsung 10K 2015
Text: HV9805 230VAC SEPIC Evaluation Board User’s Guide 2015 Microchip Technology Inc. DS50002362A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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HV9805
230VAC
DS50002362A
Sheets2-818-7423
DS50002362A-page
HVR 2-12
HV9805
samsung 10K 2015
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Untitled
Abstract: No abstract text available
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
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ad918
Abstract: No abstract text available
Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MPP-65PLL
ad918
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BUK9MJJ-65PLL
Abstract: TOPFET high side switch MS-013 SO20 d65003
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
BUK9MJJ-65PLL
TOPFET high side switch
MS-013
SO20
d65003
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Untitled
Abstract: No abstract text available
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 02 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
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Untitled
Abstract: No abstract text available
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
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transistor D919
Abstract: d918 D919 MS-013 SO20 D913
Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MPP-65PLL
transistor D919
d918
D919
MS-013
SO20
D913
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transistor D919
Abstract: No abstract text available
Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MPP-65PLL
transistor D919
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transistor C9012
Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 QuvyvÃTr vpqp
The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.
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GTV1000
AN98051
GTV1000
TDA884X
C9029
220uF
C6004
transistor C9012
transistor c9018
dc05 7 segments
TDA7075AQ
UV1315
tda8842 circuit diagram
transistor c9014
c9015 transistor
c9018 transistor
transistor C9015
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1-450-358-11
Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.
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TA-VE150
RM-U150)
1-450-358-11
SI-18752
si18752
schematic diagram surround sony
ry901
t1al fuse
M5F79M07L
T902 transformer
11ES2-NTA2B
2SA1175-HFE
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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hitachi transistor fn651
Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
Text: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.
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35TX10B/CZ41
31UX5B/CY45
31CX4B/CY44
27UX5B/C745
27CX4B/C744
27CX3B/C743
Q0501
Q3801
Q3802
hitachi transistor fn651
fn651
thyristor Q406
C745 TRANSISTOR
ST C744
c311c
c744 diodes
ld 33 c744
A68KSA30X
TELEVISION EHT TRANSFORMERS
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MC 1047P
Abstract: MC7410L MC478 MFC4000 C9719F 9722P Transistor C3153 germanium transistor 725P SPRAGUE schematic of mc1466
Text: LINEAR CIRCUITS Linear Application Selector Guide Operational Amplifiers Regulators Microwave Devices Special-Purpose Circuits Consumer Products MICROCIRCUIT COMPONENTS GENERAL INFORMATION Index D IG ITA L CIRCUITS MECL MECL II MC1000/MC1200 Series MHTL MC660 Series
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MC1000/MC1200
MC660
MC7400P,
MC5400L/MC7400L
MC5400F/MC7400F
MC5400/MC7400
MC500/MC400
MC2100/MC2000
MC3100/MC3000
MC 1047P
MC7410L
MC478
MFC4000
C9719F
9722P
Transistor C3153
germanium transistor
725P SPRAGUE
schematic of mc1466
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