054n40
Abstract: KMB054N40 semiconductor 054n40 kmb054n40da semiconductor KMB 054N40 marking DA DA DPAK kmb 054n40
Text: SEMICONDUCTOR KMB054N40DA 1 MARKING SPECIFICATION DPAK(1) PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. 2007. 4. 18 KMB 054N40 DA 709 1 3 Item Marking Description Device Name KMB054N40DA(1) KMB054N40DA(1) Revision - - Lot No. 709 Revision No : 0
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KMB054N40DA
054N40
054n40
KMB054N40
semiconductor 054n40
semiconductor KMB 054N40
marking DA
DA DPAK
kmb 054n40
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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I-20089
tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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R5C485-LQFP144
Abstract: bc725 BC698 BC236 BC709 bc711 BC717 BC683 RC300MB SMD RA3 PNP
Text: 8 Part List 8-1 Exploded View 8-1-1 System Exploded Housing Bottom P28 8-1 This Document can not be used without Samsung’s authorization. 8 Part List No Part Name Code No Q’ty Specification Vendor 1 UNIT/HOUSING-BOTTOM BA75-01374A 1 SON & ARRK 2 FAN BA31-00018A
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BA75-01374A
BA31-00018A
BA92-02744A
BA75-01375A
BA59-01294A
BA61-00910A
BA43-00134A
BA75-01376A
BA59-01052A
BA75-01377A
R5C485-LQFP144
bc725
BC698
BC236
BC709
bc711
BC717
BC683
RC300MB
SMD RA3 PNP
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PDF
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3528 SMD Samsung LED
Abstract: c828* npn TC513 PIO500 NPN c823 10W 0.1OHM isl6247 2012 B 100NF samsung 7sz125 10nF 50V Y5V samsung
Text: This Document can not be used without Samsung’s authorization. 3 System Schematic Diagrams 3-1 Main Board 3-1-1 Schematic Diagrams Sens V 30 3-1 3 System Schematic Diagrams This Document can not be used without Samsung’s authorization. 3-1-1 a System Main Board Schematic Sheet 2 of 48(BLOCK DIAGRAM)
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022nF
1/16W
470ohm
150ohm
220OHM
1/10W
KST3904
350mW
3528 SMD Samsung LED
c828* npn
TC513
PIO500
NPN c823
10W 0.1OHM
isl6247
2012 B 100NF samsung
7sz125
10nF 50V Y5V samsung
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PDF
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30b1 diode
Abstract: ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d
Text: This Document can not be used without Samsung’s authorization. 5 Schematic Diagrams and PCB Silkscreen 5-1 MAIN BOARD 5-1-1 Schematic Diagrams M30 5-1 5 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.
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100nF,
1/16W
30b1 diode
ntc 10d-7
DIODE G7.9
27B2 diode
45x1
diode M30 c300
811324
q515
11F4
smd diode f4 4d
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PDF
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BC249
Abstract: BC248 BC246 bc711 bc725 bc732 BC247 BC217 samsung R519 BC735
Text: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nF
100nF,
2K/33OHM
220PF
10000NF,
BC249
BC248
BC246
bc711
bc725
bc732
BC247
BC217
samsung R519
BC735
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PDF
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bc725
Abstract: BC248 BC249 BC195 BC105* BC106* BC107* BC108* BC109* BC110 bc711 BC710 bc188 BC712 BC246
Text: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nF
100nF,
2K/33OHM
220PF
10000NF,
bc725
BC248
BC249
BC195
BC105* BC106* BC107* BC108* BC109* BC110
bc711
BC710
bc188
BC712
BC246
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PDF
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369-41
Abstract: SMB34 smb340 MARK G17 SOT-89 sot-89 ldo 3.3v cb CMSH3-40
Text: LT3694/LT3694-1 36V, 2.6A Monolithic Buck Regulator With Dual LDO DESCRIPTION FEATURES Wide Input Range: 4V to 36V n Overvoltage Shutdown Protects Circuit Through 70V Transients n 2.6A Output Switching Regulator with Internal Power Switch n Dual, Low Dropout, Linear Regulator Controllers
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250kHz
LT3694)
LT3694-1)
28-Lead
20-Lead
DFN-10
MSOP-10E
QFN-38
369-41
SMB34
smb340
MARK G17 SOT-89
sot-89 ldo 3.3v cb
CMSH3-40
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PDF
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D-PAK B340
Abstract: 369-41 smb34 23v transformer LT3694 smb340 CMSH3-40 36941 B340A
Text: LT3694/LT3694-1 36V, 2.6A Monolithic Buck Regulator With Dual LDO DESCRIPTION FEATURES Wide Input Range: 4V to 36V n Overvoltage Shutdown Protects Circuit Through 70V Transients n 2.6A Output Switching Regulator with Internal Power Switch n Dual, Low Dropout, Linear Regulator Controllers
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LT3694/LT3694-1
250kHz
LT3694)
DFN-10
MSOP-10E
LT3970
350mA,
MSOP-10
LT3980
D-PAK B340
369-41
smb34
23v transformer
LT3694
smb340
CMSH3-40
36941
B340A
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTD2N40E/D
TD2N40E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD1N50E/D
TD1N50E
MTD1N50E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD6N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD6N20E/D
TD6N20E
MTD6N20E/D
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PDF
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d2955
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD2955E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2955E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e P-Channel Enhancement-Mode Silicon Gate
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TD2955E/D
MTD2955E/D
d2955
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD1N60E/D
TD1N60E
MTD1N60E/D
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PDF
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TD4N20E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD4N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD4N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 4.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD4N20E/D
TD4N20E
MTD4N20E/D
TD4N20E
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PDF
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MTD6N10E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N10E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM
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MTD6N10E/D
TD6N10E
MTD6N10E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD9N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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TD9N10E/D
MTD9N10E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD14N10E TMOS E-FET Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T his ad van ced T M O S po w e r FET is d e sig ned to w ith sta nd high
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MTD14N10E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD1N80E/D
TD1N80E
MTD1N80E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD5P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5P06V TMOS V™ Power Field Effect Transistor DPAK for S urface Mount M otorola Preferred Device TM O S POWER FET 5 AMPERES 60 VOLTS RDS on = 0.450 OHM
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TD5P06V/D
MTD5P06V/D
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PDF
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MOTOROLA 3055V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTD3055V/D
TD3055V
MOTOROLA 3055V
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD15N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TM OS V Pow er Field E ffect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 15 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTD15N06V/D
MTD15N06V
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PDF
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3055vl
Abstract: Motorola 3055vl 3055vl motorola
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This
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MTD3055VL/D
3055VL
3055vl
Motorola 3055vl
3055vl motorola
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transistor T2S
Abstract: l5 transistor PNP KSH350
Text: PNP EPITAXIAL SILICON TRANSISTOR KSH350 HIGH VOLTAG E POWER TRANSISTORS DPAK FOR SURFACE MOUNT A PPLICATIO NS D -P A K • Le a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix • S tra ig h t L e a d (“ -I “ S u ffix ) ABSOLUTE M AXIMUM RATINGS
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KSH350
300nA,
CURKSJ41
-100G
transistor T2S
l5 transistor PNP
KSH350
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