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    DARK DETECTOR PROJECT Search Results

    DARK DETECTOR PROJECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR4510UR-AZ Renesas Electronics Corporation Detectors, , / Visit Renesas Electronics Corporation
    YCB16RL78I1D001B Renesas Electronics Corporation Smoke Detector Visit Renesas Electronics Corporation
    EXE8602-DNT Renesas Electronics Corporation 71 – 86 GHz Power Detector Visit Renesas Electronics Corporation
    ICL7665SCPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation
    ICL7665SACPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation

    DARK DETECTOR PROJECT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AC Photonics

    Abstract: A348 GR 733 S6933 SE-171 telephone
    Text: SSD Si strip detector S6933 AC-coupled single-sided Si strip detector for particle tracking S6933 is SSD Si Strip Detector developed for WA89 project of CERN. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance


    Original     		S6933 S6933 SE-171 KSPD1046E01 AC Photonics A348 GR 733 telephone PDF

    UNITED DETECTOR

    Abstract: A342 S6935 SE-171
    Text: SSD Si strip detector S6935 AC-coupled double-sided Si strip detector for particle tracking S6935 is SSD Si Strip Detector developed for SDC experiment of SSC project. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance


    Original     		S6935 S6935 SE-171 KSPD1048E01 UNITED DETECTOR A342 PDF

    A368

    Abstract: S6936 S6936-01 SE-171
    Text: SSD Si strip detector S6936 series AC-coupled double-sided Si strip detector for particle tracking S6936 series is SSD Si Strip Detector developed for DELPHI project of CERN. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance


    Original     		S6936 SE-171 KSPD1049E01 A368 S6936-01 PDF

    Silicon Detector

    Abstract: No abstract text available
    Text: Si detectors for high energy particles CHAPTER 10 1 Characteristics 1-1 Active area 1-2 Dark current and junction capacitance 1-3 Response speed 2 Si detectors for scintillator coupling 3 Si direct detectors 3-1 3-2 3-3 3-4 3-5 Thickness of depletion layer


    Original     		KSPDC0073EA Silicon Detector PDF

    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original     		14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R PDF

    Measurement Techniques

    Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
    Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		31-Jul-12 Measurement Techniques measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note PDF

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector PDF

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
    Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		27-Aug-08 BPW34 application note APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram PDF

    near IR sensors with daylight filter

    Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
    Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		PDF

    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original     		TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF PDF

    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g PDF

    PHOTOTRANSISTOR 3 LEGS

    Abstract: military resistors catalog photoconductive cell cdse schematic retro reflective sensor "x-ray detector" VTR17D1 opamps catalog common cathode photodiode diodes catalog design opto interrupter
    Text: Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Optoswitches, Optical Hybrids, and Custom Optical Assemblies Specialty Lighting Digital Imaging Telecom Sensors . . Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR


    Original     		D-65199 CA-275 PHOTOTRANSISTOR 3 LEGS military resistors catalog photoconductive cell cdse schematic retro reflective sensor "x-ray detector" VTR17D1 opamps catalog common cathode photodiode diodes catalog design opto interrupter PDF

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original     		VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram PDF

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor PDF

    lux meter chip

    Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
    Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability


    Original     		VSMY1850 J-STD-020 2002/95/EC 2002/96/EC VSMY1850 2002/95/EC. 2011/65/EU. JS709A lux meter chip IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g PDF

    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original     		VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note PDF

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
    Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 lux meter calibration RB94 PDF

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter PDF

    pin configuration bpw34

    Abstract: APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control VSMY2850
    Text: VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG FEATURES VSMY2850G • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8


    Original     		VSMY2850RG, VSMY2850G VSMY2850RG VEMD2500X01 J-STD-020 VSMY2850 2002/95/EC. 2002/95/EC 2011/65/EU. pin configuration bpw34 APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control PDF

    BPW34 osram

    Abstract: wi41g BPW34 application note
    Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm


    Original     		VSMY1850X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC VSMY1850X01 2002/95/EC. 2011/65/EU. JS709A BPW34 osram wi41g BPW34 application note PDF

    BPW34 smd

    Abstract: smd resistor 8606 BPW34 application note
    Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		VSMF4710 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 smd smd resistor 8606 BPW34 application note PDF

    OSRAM IR emitter

    Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
    Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability


    Original     		VSMG2700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A OSRAM IR emitter BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter PDF

    Untitled

    Abstract: No abstract text available
    Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )


    OCR Scan     		D04b727 1100ction A23SbDS 0G4b72Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V


    OCR Scan     		0007fci40 --SFH233 aZ3b32b 0007fc PDF