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    DARLIGTON POWER TRANSISTOR Search Results

    DARLIGTON POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLIGTON POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD680

    Abstract: BD678 BD676 ic 313 BD678 equivalent to126 bd680
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION •With TO-126 package ·Complement to type BD675/BD677/BD679 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in


    Original     		PDF BD676/BD678/BD680 O-126 BD675/BD677/BD679 BD676 BD678 BD680 BD680 BD678 BD676 ic 313 BD678 equivalent to126 bd680

    bd677 datasheet

    Abstract: BD679 BD677 BD675 NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 ・ DESCRIPTION ・With TO-126 package ・Complement to type BD676/678/680 ・DARLINGTON ・High DC current gain APPLICATIONS ・For use as output devices in


    Original     		PDF BD675/BD677/BD679 O-126 BD676/678/680 BD675 BD677 BD679 bd677 datasheet BD679 BD677 BD675 NPN POWER DARLINGTON TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD426302 TECHNICAL DATA DATA SHEET, 968 REV. – Formerly part number SHD4262 BIPOLAR POWER TRANSISTOR DARLIGTON CONFIGURATION DESCRIPTION: A DARLINGTON NPN POWER TRANSISTOR IN A TO-257 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .


    Original     		PDF SHD4262 SHD426302 O-257

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419302 TECHNICAL DATA DATA SHEET, 970, REV. – Formerly part number SHD4192 BIPOLAR POWER TRANSISTOR DARLIGTON CONFIGURATION DESCRIPTION: A DARLINGTON NPN POWER TRANSISTOR IN AN LCC-3P PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .


    Original     		PDF SHD4192 SHD419302

    BD679

    Abstract: BD677 BD675 bd677 datasheet darligton power bd679 NPN
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 DESCRIPTION •With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose


    Original     		PDF BD675/BD677/BD679 O-126 BD676/678/680 BD675 BD677 BD679 collec75 BD679 BD677 BD675 bd677 datasheet darligton power bd679 NPN

    1902 transistor

    Abstract: darligton power transistor darligton transistor HMPSA26
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6308-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/3 HMPSA26 NPN SILICON TRANSISTOR Description The HMPSA26 is designed for using in darligton transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6308-B HMPSA26 HMPSA26 1902 transistor darligton power transistor darligton transistor

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    AQS210PS

    Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
    Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of


    Original     		PDF I-37012 CH-6343 ACG-C0274-E-1 AQS210PS AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S

    210EH

    Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
    Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of


    Original     		PDF