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    DARLINGTON COMPLEMENTARY 120V Search Results

    DARLINGTON COMPLEMENTARY 120V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ML6431CH Rochester Electronics LLC ML6431 - Consumer Circuit, BICMOS, PQFP32 Visit Rochester Electronics LLC Buy
    4007A/BCA Rochester Electronics LLC 4007A - Dual Complementary Pair Plus Inverter - Dual marked (M38510/05301BCA) Visit Rochester Electronics LLC Buy
    ML6430CH Rochester Electronics LLC ML6430 - Consumer Circuit, BICMOS, PQFP32 Visit Rochester Electronics LLC Buy

    DARLINGTON COMPLEMENTARY 120V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
    Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.


    Original     		MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


    Original     		MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent PDF

    Complementary Darlington Audio Power Amplifier

    Abstract: audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v
    Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT−82 type package designed for use in audio output stages and general amplifier and switching


    Original     		NTE2345 NTE2346 OT-82 Complementary Darlington Audio Power Amplifier audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v PDF

    audio Darlington 6A

    Abstract: No abstract text available
    Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching


    Original     		NTE2345 NTE2346 audio Darlington 6A PDF

    NTE2344

    Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V


    Original     		NTE2343 NTE2344 100mA, NTE2344 nte2343 SILICON COMPLEMENTARY transistors darlington PDF

    NTE2560

    Abstract: RBE 215 RELAY SILICON COMPLEMENTARY transistors darlington darlington complementary 120v NTE2559
    Text: NTE2559 NPN & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V


    Original     		NTE2559 NTE2560 NTE2560, NTE2560 RBE 215 RELAY SILICON COMPLEMENTARY transistors darlington darlington complementary 120v NTE2559 PDF

    Darlington 40A

    Abstract: NTE2542 darlington complementary 120v NTE2541 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2541 NPN & NTE2542 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V


    Original     		NTE2541 NTE2542 NTE2542, Darlington 40A NTE2542 darlington complementary 120v NTE2541 SILICON COMPLEMENTARY transistors darlington PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 PDF

    marking 1F7

    Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 marking 1F7 ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA PDF

    TS16949

    Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


    Original     		ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 TS16949 ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


    Original     		ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 PDF

    NTE2349

    Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA NTE2349 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350 PDF

    300w power amplifier circuit diagram

    Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA 300w power amplifier circuit diagram complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234 PDF

    Untitled

    Abstract: No abstract text available
    Text: T64 T65 MAGNA TEC MECHANICAL DATA Dimensions in mm 15.2 max SILICON DARLINGTON POWER TRANSISTORS 4.6 max 14 2.0 4.4 21.0 max 4.25 Dia. 4.15 12.7 max 1 2 3 Complementary epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching


    Original     		300ms PDF

    2596

    Abstract: BDS29A BDS29B BDS29C
    Text: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)


    Original     		BDS29A BDS29B BDS29C 2596 BDS29A BDS29B BDS29C PDF

    Untitled

    Abstract: No abstract text available
    Text: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)


    Original     		BDS29A BDS29B BDS29C PDF

    npn C 1740

    Abstract: No abstract text available
    Text: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)


    Original     		BDS29A BDS29B BDS29C BDS29ASMD BDS29ASMD-JQR-B BDS29BSMD BDS29BSMD-JQR-B BDS29C npn C 1740 PDF

    darlington complementary 120v

    Abstract: FZT605 FZT604 FZT704 FZT705 dc1s VCES10
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705


    Original     		OT223 FZT604 FZT605 FZT604 FZT704 FZT605 FZT705 100ms darlington complementary 120v FZT704 FZT705 dc1s VCES10 PDF

    FZT605

    Abstract: FZT604 FZT705
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		OT223 FZT605 FZT705 100ms FZT605 FZT604 FZT705 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		OT223 FZT605 FZT705 100ms FZT604 FZT605 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705


    Original     		OT223 FZT604 FZT605 FZT604 FZT704 FZT605 FZT705 100ms PDF

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


    Original     		2SD2275 2SB1502 2SB1502 2SD2275 PDF

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge PDF

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


    Original     		2SD2275 2SB1502 2SB1502 2SD2275 PDF