2n222 TRANSISTOR
Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
2n222 TRANSISTOR
Ferroxcube core
MR826 equivalent
1N493
transistor 2n222
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1N493
Abstract: transistor 2N222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
1N493
transistor 2N222
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Untitled
Abstract: No abstract text available
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
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B5742G
Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
B5742G
high voltage fast switching transistor for ignition coil drivers application
of diode 2n222
2n222 TRANSISTOR
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MJE5740
Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G
Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON
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MJE5740,
MJE5742
MJE5742
MJE5740
MJE5740
MJE-5740
MJE5740G
MJE5742G
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2N6038
Abstract: to225a 2N6034 2N6034G 2N6038G 2N6039 2N6035G 2N6036G to225aa 2N6035
Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features
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2N6034,
2N6035,
2N6036;
2N6038,
2N6039
2N6034
2N6038
2N6036,
2N6038
to225a
2N6034
2N6034G
2N6038G
2N6039
2N6035G
2N6036G
to225aa
2N6035
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Untitled
Abstract: No abstract text available
Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching
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2N6034,
2N6035,
2N6036;
2N6038,
2N6039
2N6034
2N6038
2N6036,
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Untitled
Abstract: No abstract text available
Text: 2N6034G, 2N6035G, 2N6036G PNP , 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching
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2N6034G,
2N6035G,
2N6036G
2N6038G,
2N6039G
2N6034G
2N6035G
2N6035/D
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MJ11022
Abstract: marking code to3 diode 1N5825 MJ11021 MJ11021G MJ11022G MSD6100 darlington power transistor mj11021
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
MJ11021/D
MJ11022
marking code to3 diode
1N5825
MJ11021G
MJ11022G
MSD6100
darlington power transistor mj11021
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MJ11021
Abstract: 1N5825 MJ11021G MJ11022 MJ11022G MSD6100 marking code to3 diode
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
O-204AA
1N5825
MJ11021G
MJ11022
MJ11022G
MSD6100
marking code to3 diode
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Untitled
Abstract: No abstract text available
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
MJ11021/D
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2N6034G
Abstract: 2N6039 2N6036G 1N5825 2N6034 2N6035 2N6036 2N6038 MSD6100
Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching
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2N6034,
2N6035,
2N6036;
2N6038,
2N6039
O-225AA
2N6034
2N6038
2N6036,
2N6034G
2N6039
2N6036G
1N5825
2N6034
2N6035
2N6036
2N6038
MSD6100
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2N6038
Abstract: 2N6034G 2n6038g 2N6036G 2N6034 1N5825 2N6035 2N6036 2N6039 MSD6100
Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching
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2N6034,
2N6035,
2N6036;
2N6038,
2N6039
2N6034
2N6038
2N6036,
2N6038
2N6034G
2n6038g
2N6036G
2N6034
1N5825
2N6035
2N6036
2N6039
MSD6100
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TIP132
Abstract: TIP131G TIP131 TIP132G TIP137 TIP137G
Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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TIP131,
TIP132
TIP137
TIP131
TIP132,
TIP131/D
TIP132
TIP131G
TIP131
TIP132G
TIP137
TIP137G
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35N04G
Abstract: NJD35N04G
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features •
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
NJD35N04G
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35N04G
Abstract: NJD35N04G NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
NJD35N04/D
35N04G
NJD35N04G
NJD35N04T4G
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DARLINGTON MANUAL
Abstract: 100 amp npn darlington power transistors NJD35N04G NJD35N04T4G d marking code dpak transistor
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
NJD35N04/D
DARLINGTON MANUAL
100 amp npn darlington power transistors
NJD35N04G
NJD35N04T4G
d marking code dpak transistor
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Untitled
Abstract: No abstract text available
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
NJD35N04/D
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NJD35N04G
Abstract: NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
35N04G
NJD35N04/D
NJD35N04G
NJD35N04T4G
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tip137
Abstract: tip13 TIP13x tip131
Text: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS
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TIP131,
TIP132
TIP137
TIP131
TIP132,
TIP137
O-220AB
TIP131/D
tip13
TIP13x
tip131
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Untitled
Abstract: No abstract text available
Text: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS
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TIP131,
TIP132
TIP137
TIP131
TIP132,
TIP131/D
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35N04G
Abstract: schematic diagram electrical motor control
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
schematic diagram electrical motor control
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NJD35N04G
Abstract: NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
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NJD35N04G
35N04G
NJD35N04/D
NJD35N04G
NJD35N04T4G
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transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
PZTA14T1
inch/1000
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor BF245
BC237
transistor motorola 2n3053
MMBF5486
TRANSISTOR REPLACEMENT FOR 2N3053
855 sot363
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