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    DARLINGTON NPN HIGH POWER Search Results

    DARLINGTON NPN HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON NPN HIGH POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


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    2N6388 O-220 O-220 P011C 2N6388 PDF

    2N6388

    Abstract: No abstract text available
    Text: 2N6388  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original
    2N6388 O-220 O-220 2N6388 PDF

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    Original
    2N6388 O-220 O-220 2N6388 PDF

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


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    2N6388 O-220 O-220 2N6388 PDF

    2SD418

    Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


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    MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 PDF

    BU941

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T BU941ZL-TQ2-T BU941ZG-TQ2-T BU941ZL-TQ2-R BU941ZG-TQ2-R O-220 PDF

    BU806 MOTOROLA

    Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


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    BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127 PDF

    BU806

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


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    220AB BU806 PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


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    BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 BU941ZL-TQ2-T BU941ZG-TQ2-T O-263 BU941ZL-TQ2-R PDF

    ignition coil bu941l

    Abstract: hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER „ FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode „ APPLICATIONS * High ruggedness electric ignitions „ INTERNAL SCHEMATIC DIAGRAM


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    BU941 BU941L BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-R BU941L-TQ2-R BU941-TQ2-T BU941L-TQ2-T ignition coil bu941l hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor PDF

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


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    220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 PDF

    NPN Transistor 10A 24V

    Abstract: No abstract text available
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 O-220 QW-R203-025 NPN Transistor 10A 24V PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


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    BU941 O-220 QW-R203-025 hFE-100 NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100 PDF

    2N6059

    Abstract: No abstract text available
    Text: 1165895 Silicon NPN power darlington transistor. Features: • • • • • High gain. NPN darlington. High current. High dissipation. Integrated antiparallel collector-emitter diode. Applications: Linear and switching industrial equipment. TO-3 Description:


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    2N6059 PDF

    MJ10000

    Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
    Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


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    MJ10000/D* MJ10000/D MJ10000 MJ10001 1N4937 voltage regulators 6 amp to3 PDF

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


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    BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    OCR Scan
    2N6388 O-220 PDF

    mj10000

    Abstract: MJ10001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,


    OCR Scan
    MJ10000 MJ10000 MJ10001 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan
    BU806/D BU806 -220A 21A-06 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . HIGH DC CURRENT GAIN . U.L. RECOGNISED ISOWATT218 PACKAGE


    OCR Scan
    BU808DFI ISOWATT218 SOWATT218 P025C PDF

    npn darlington transistor 200 watts

    Abstract: Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    OCR Scan
    BU806 O-220AB 21A-06 O-220AB npn darlington transistor 200 watts Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250 PDF