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    DARLINGTON TRANSISTOR ARRAYS Search Results

    DARLINGTON TRANSISTOR ARRAYS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR ARRAYS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uln2003r

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY  DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs


    Original     		PDF ULN2003R ULN2003R 500mA. OP-16 QW-R113-013

    ULN2003 RELAY DRIVER

    Abstract: No abstract text available
    Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode


    Original     		PDF ULN2003 ULN2003 500mA. DIP-16 ULN2003 RELAY DRIVER

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    M54523

    Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic

    M54583FP

    Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array

    IL500

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN IL500

    M54522

    Abstract: m54566 M54566WP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566WP 400mA M54566WP 400mA) M54522 m54566

    8 pin 4v power supply ic

    Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS

    18P4G

    Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP


    Original     		PDF M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"

    M54522

    Abstract: M54566DP Seven Transistor Array PNP m54566
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated


    Original     		PDF M54566DP 400mA M54566DP 400mA) Jul-2011 M54522 Seven Transistor Array PNP m54566

    M54523

    Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 18P4G 20P2N-A M54583 pnp 8 transistor array 8-channel PNP darlington array

    M63827DP

    Abstract: M63827WP 16PIN 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN

    8 pin 4v power supply ic

    Abstract: M54222 Seven Transistor Array PNP M54566FP pnp 8 transistor array M54566P transistor arrays 5v m54566 M5422 pnp darlington array
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic M54222 Seven Transistor Array PNP pnp 8 transistor array transistor arrays 5v m54566 M5422 pnp darlington array

    M54519P

    Abstract: M54519FP IC M54519P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


    Original     		PDF M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P

    ILN2003AD

    Abstract: ILN2003AN darlington pair transistor ILN2003A J 620 610 transistor seven transistor drivers
    Text: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The


    Original     		PDF ILN2003A 500-mA 012AC) ILN2003AD ILN2003AN darlington pair transistor J 620 610 transistor seven transistor drivers

    pnp darlington array

    Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54587P/FP 500mA M54587P M54587FP pnp darlington array PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M54561P 300mA M54561P 300mA)

    M54516P

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


    Original     		PDF M54516P 500mA M54516P 500mA)

    NPN DARLINGTON TRANSISTOR ARRAY

    Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


    Original     		PDF M54522WP 400mA M54522WP 400mA) Jul-2011 NPN DARLINGTON TRANSISTOR ARRAY 300 W npn darlington power transistors Transistor Array

    XR-2011

    Abstract: XR2011 XR2013CN XR2013 XR-2012
    Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


    OCR Scan     		PDF XR-2011/12/13/14 XR-2011/2012/2013/2014 XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2011 XR2011 XR2013CN XR2013 XR-2012

    Untitled

    Abstract: No abstract text available
    Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


    OCR Scan     		PDF XR-2001 XR-1568M XR-1568/XR-1468C XR-1468/1568

    2002cn

    Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
    Text: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


    OCR Scan     		PDF XR-2001/2/3/4 XR-2001 XR-1568M XR-1568/XR-1468C XR-1468/1568 2002cn XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN

    XR-2203

    Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
    Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­


    OCR Scan     		PDF XR-220172/3/4 XR-2201, XR-2202, XR-2203, XR-2204 500mA XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2203 XR-2203CP XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204