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    DARLINGTON TRANSISTOR SOT223 Search Results

    DARLINGTON TRANSISTOR SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W „ ORDERING INFORMATION


    Original     		PDF PZTA14 PZTA14 PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004,

    diode r207

    Abstract: PZTA14
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W Lead-free: PZTA14L


    Original     		PDF PZTA14 PZTA14 PZTA14L PZTA14G PZTA14-AA3-R PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004 diode r207

    Untitled

    Abstract: No abstract text available
    Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF PZTA14 PZTA14 OT-223 SYMBO1000 100mA 100mA 100MHz QW-R207-004

    dk sot223 pnp

    Abstract: PNP TRANSISTOR SOT223 BP317 PZTA14 PZTA64
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification PNP Darlington transistor


    Original     		PDF M3D087 PZTA64 OT223 PZTA14. MAM320 SCA54 117047/00/02/pp8 dk sot223 pnp PNP TRANSISTOR SOT223 BP317 PZTA14 PZTA64

    diode r207

    Abstract: "Darlington Transistor" PZTA14
    Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF PZTA14 PZTA14 OT-223 QW-R207-004 diode r207 "Darlington Transistor"

    PZT506

    Abstract: No abstract text available
    Text: PZT506 NPN Silicon Planar Elektronische Bauelemente Medium Power Darlington Transistor RoHS Compliant Product SOT-223 Description The PZT506 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Features * Fast Switching


    Original     		PDF PZT506 OT-223 PZT506 250mA 500mA 100mA, 20MHz 500mV 01-Jun-2002

    CZT2000

    Abstract: No abstract text available
    Text: Central CZT2000 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    Original     		PDF CZT2000 OT-223 160mA, 160mA CZT2000

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA14 NPN Darlington transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN Darlington transistor


    Original     		PDF M3D087 PZTA14 OT223 PZTA64. PZTA14 MAM319 OT223) SCA54 117047/00/03/pp8

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    Original     		PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    marking code 17 surface mount diode

    Abstract: TRANSISTOR L 287 A marking 009 CZTA28
    Text: Central CZTA28 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA28 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CZTA28 OT-223 17-June OT-223 marking code 17 surface mount diode TRANSISTOR L 287 A marking 009 CZTA28

    ON Semiconductor marking AN

    Abstract: transistor sot 223 CZT2000 darlington ic
    Text: Central CZT2000 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for


    Original     		PDF CZT2000 OT-223 160mA 160mA, 26-September ON Semiconductor marking AN transistor sot 223 CZT2000 darlington ic

    Untitled

    Abstract: No abstract text available
    Text: Central CZTA28 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA28 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CZTA28 OT-223 100mA, 100mA 100MHz 100kHz 14-November

    "Darlington Transistor"

    Abstract: CZTA77 15 A PNP POWER TRANSISTOR
    Text: CZTA77 Central TM Semiconductor Corp. SURFACE MOUNT PNP DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZTA77 OT-223 100mA, 100mA 100MHz 01-Feb "Darlington Transistor" CZTA77 15 A PNP POWER TRANSISTOR

    power darlington npn transistor

    Abstract: 7239 CZTA27 VEBo-10V
    Text: N EW Central CZTA27 TM Semiconductor Corp. NPN HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CZTA27 OT-223 100mA 100mA, 100MHz power darlington npn transistor 7239 CZTA27 VEBo-10V

    TRANSISTOR 023

    Abstract: CZTA77 PNP Epitaxial Silicon Transistor sot223
    Text: CZTA77 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZTA77 OT-223 100MHz 17-June OT-223 TRANSISTOR 023 CZTA77 PNP Epitaxial Silicon Transistor sot223

    Untitled

    Abstract: No abstract text available
    Text: CZTA77 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZTA77 OT-223 100mA, 100mA 100MHz 14-November

    "Darlington Transistor"

    Abstract: CZT250K
    Text: CZT250K SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT250K type is an NPN silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZT250K OT-223 100mA, 100mA 100MHz 01-Feb "Darlington Transistor" CZT250K

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTA14 NPN Darlington transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 14 Philips Semiconductors Product specification NPN Darlington transistor PZTA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D087 PZTA14 OT223 PZTA64. MAM319 OT223) SCA63 115002/00/04/pp8

    Untitled

    Abstract: No abstract text available
    Text: Central“ CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICC NDUCTORCZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		PDF CZT2000 NDUCTORCZT2000 OT-223 CHARACTERISTICS00 160mA, 100hA 160mA

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		PDF CZT2000 OT-223 160mA, 160mA 100hA

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2000 Sam lcoitductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		PDF CZT2000 OT-223 25piA 16OmA, 160mA 100nA 160mA

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PZTA14 NPN Darlington transistor 1999 Apr 14 Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor PZTA14 FEATURES


    OCR Scan     		PDF PZTA14 PZTA14 OT223 PZTA64. 115002/00/04/pp8

    TE 2161 motorola

    Abstract: transistor TE 2162 0/TE 2161 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    OCR Scan     		PDF OT-223 BSP62T1 inch/1000 BSP62T3 inch/4000 BSP52T1 BSP62T1 TE 2161 motorola transistor TE 2162 0/TE 2161 motorola

    TRANSISTOR AS3

    Abstract: motorola darlington power transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP52T1 NPN Sm all-Signal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    OCR Scan     		PDF OT-223 BSP52T1 inch/1000 BSP52T3 inch/4000 BSP62T1 BSP52T1 TRANSISTOR AS3 motorola darlington power transistor