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    DATA SHEET GERMANIUM DIODE Search Results

    DATA SHEET GERMANIUM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DATA SHEET GERMANIUM DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BGT24MTR12

    Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC PDF

    BGT24MTR11

    Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 B7HF200 sun resistor 400 mohm 24 GHz transceiver IFX VQFN32 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 PDF

    T0825

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825 PDF

    smd marking list infineon

    Abstract: No abstract text available
    Text: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 2.0, 2011-09-16 Preliminary RF & Protection Devices Edition 2011-09-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved.


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    BGA925L6 smd marking list infineon PDF

    Germanium Transistor

    Abstract: BFP842
    Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-04-11 RF & Protection Devices Edition 2013-04-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP Germanium Transistor BFP842 PDF

    BGA628L7

    Abstract: XPOSYS 628L C166 JESD22-A114 NF50
    Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


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    BGA628L7 BGA628L7 XPOSYS 628L C166 JESD22-A114 NF50 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGA231L7 PDF

    BGA915

    Abstract: No abstract text available
    Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGA915N7 BGA915 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BFP840FESD BFP840FESD: PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGA915N7 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG


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    BGA524N6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.


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    NDL5171P GI-50/125) NDL5171P NDL5171P1 NDL5171P2 b427525 PDF

    gi diode

    Abstract: diode gi GERMANIUM nec
    Text: DATA SHEET PHOTO DIODE NDL5151P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^50 /¿m GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5151P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems, and features small dark current and high speed response.


    OCR Scan
    NDL5151P GI-50/125) NDL5151P GI-50/125 NDL5151P1 NDL5151P2 b427525 gi diode diode gi GERMANIUM nec PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors


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    NDL5105P, NDL5105P1 NDL5105P NDL5105P1 NDL5106PI SI-10/125 NDL5100 NDL5100C NDL5100P NDL5104P PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NDL5131P Series 1 300 nm OPTICAL FIBER COMMUNICATIONS ^30 fim GERMANIUM AVALANCHE PHOTO DIODE MODULE WITH SMF DESCRIPTION NDL5131P Series is a Germanium avalanche photo diode module with singlemode fiber. It is designed for long wavelength transmission systems, and features small dark current and high speed response due to 30 //m detecting


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    NDL5131P SM-9/125) NDL5131P SM-9/125 NDL5131P1 NDL5131P2 SM-9/125 4E752S PDF

    dl520

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission


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    bM27SES NDL5102 L427SES NDL5102 NDL5102C DL5200 NDL5100 NDL5100C NDL5100P* dl520 PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b 2 E ]> • ^ 5 7 5 2 3 oo3fiotfl T 5 b HINECE DATA SHEET NEC PHOTO DIODE N D L 5 1 0 0 ELECTRON DEVíCE 1 300 nm OPTICAL FIBER COMM UNICATIONS 4> 100 //m GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5100 is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission


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    NDL5100 NDL5200 NDL5100C NDL5102C NDL5100P* NDL5102P* PDF

    NDL5200

    Abstract: 2c ti apd LD236
    Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5171P, NDL5171P1, NDL5171P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 100 ¡im GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P, NDL5171P1 and NDL5171P2 are G erm anium avalanche photo diode m odules w ith m ultim ode fiber.


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    NDL5171P, NDL5171P1, NDL5171P2 NDL5171P1 NDL5171P2 NDL5171PC, NDL5171P1C NDL5171P2C. GI-50/125) NDL5200 2c ti apd LD236 PDF

    Untitled

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS


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    G00G32fci 1N100A 250mA 400mA 10mW/10 --50uA PDF

    diode piv 100 500ma

    Abstract: G1594 gold bonded germanium diode
    Text: B K C INTERNATIONAL 30É D • llTTTfiB DQDDBS1 S ■ '~pO\-§-} BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 BKC ENGINEERING DATA SHEET FOR TYPE NUMBER G 1594 GOLD BONDED GERMANIUM DIODE ABSOLUTE MAXIMUM RATINGS


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    G1594 500mA diode piv 100 500ma G1594 gold bonded germanium diode PDF