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    DATA SHEET TRANSISTOR 2030 Search Results

    DATA SHEET TRANSISTOR 2030 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DATA SHEET TRANSISTOR 2030 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC1275

    Abstract: 2sc1927
    Text: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.


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    2SC1927 2SC1275, 2SC1927 2SC1275 PDF

    AN569

    Abstract: MTP4N80E MTP4N80
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


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    MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E MTP4N80 PDF

    AN569

    Abstract: MTP4N80E
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


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    MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E PDF

    Untitled

    Abstract: No abstract text available
    Text: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    10aucti, MTP4N80E PDF

    j497

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    SL-1020 SL-1020 SLD-10201 SLD-10202 SiDVB56l j497 PDF

    LDMOS

    Abstract: SL-10202 J436 SL1020
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    SL-1020 SL-1020 SLD-10202 SLD-10201 SL-10202 SL-10201 LDMOS SL-10202 J436 SL1020 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    SL-1020 SL-1020 SLD-10201 SL-10202 SL-10201 PDF

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP mosfet b4
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


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    MAX1864/MAX1865 MAX1864 MAX1865 blo-543-7100 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP mosfet b4 PDF

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP 15DL20
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


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    MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP 15DL20 PDF

    2W3905

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


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    MAX1864/MAX1865 MAX1864 MAX1865 blo6-543-7100 MAX1864/MAX1865 2W3905 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


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    MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865 PDF

    MTB4N80E

    Abstract: AN569 SMD310 824 mosfet
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


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    MTB4N80E/D MTB4N80E MTB4N80E/D* MTB4N80E AN569 SMD310 824 mosfet PDF

    motorola an569 thermal

    Abstract: mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


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    MTB4N80E/D MTB4N80E/D MTB4N80E/D* motorola an569 thermal mosfet transistor 400 volts.100 amperes PDF

    G4IDC5D

    Abstract: OPTO 22 g4idc5 G4IDC5G IEEE-472 G4IDC5K G4IDC24
    Text: I/O MODULE G4 DIGITAL DC INPUT DATA SHEET Form 253-990215 Description page 1/4 Part Number Description G4IDC5 G4 DC Input 10-32 VDC, 5 VDC Logic G4IDC5B G4 DC Input 4-16 VDC, 5 VDC Logic High Speed G4 DC Input 2.5-28 VDC, 5 VDC Logic Opto 22’s G4 DC input modules are used to detect


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    G4IDC15 opto22 474-OPTO 321-OPTO 452-OPTO G4IDC5D OPTO 22 g4idc5 G4IDC5G IEEE-472 G4IDC5K G4IDC24 PDF

    nt 101 MICROWAVE thermostat

    Abstract: BC transistor series catalog refrigerator PTC relay nt 101 thermostat PTRL posistor PTH7M BF transistor series catalog Electronic IH rice cooker PTH6M murata
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    R16E-4 nt 101 MICROWAVE thermostat BC transistor series catalog refrigerator PTC relay nt 101 thermostat PTRL posistor PTH7M BF transistor series catalog Electronic IH rice cooker PTH6M murata PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 2, 2009 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)


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    20-30Vdc 2002/95/EC 2002/95/EC 30Vdc 15Vdc 24Vdc) 12Vdc DS06-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 16, 2007 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)


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    20-30Vdc 2002/95/EC 2002/95/EC 30Vdc 15Vdc 24Vdc) 12Vdc x3001 DS06-002 PDF

    axb0

    Abstract: configuration of ic 7819 AXB070X AXB070X43
    Text: Data Sheet March 31, 2008 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)


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    20-30Vdc 2002/95/EC 2002/95/EC 30Vdc 15Vdc 24Vdc) 12Vdc DS06-002 axb0 configuration of ic 7819 AXB070X AXB070X43 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet February 15, 2007 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)


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    20-30Vdc 2002/95/EC 2002/95/EC 30Vdc 15Vdc 24Vdc) 12Vdc x3001 DS06-002 PDF

    DK-7575

    Abstract: 02ATEX
    Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.


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    UL508 CSA22 E175199, UL1604/ E198726 EN50021 DK-7575 10-way d670800e 02ATEX PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N80E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    TP4N80E/D TP4N80E 21A-06 PDF

    mj16010

    Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r


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    J16010 J16012* MJ16012 MJ16010 J16012 MJW16012 AM503 P6302 MJ16012 MOTOROLA MJ16012 equivalent PDF

    P4n80e

    Abstract: 4n80e 557 b
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 4N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high vo lta g e M O S F E T uses an ad vanced te rm inatio n


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    MTP4N80E 0E-05 P4n80e 4n80e 557 b PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    MTB4N80E/D MTB4N80E PDF