Untitled
Abstract: No abstract text available
Text: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage
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4148SE
4148CC
MMBD4148CA
MMBD4148
MMBD4148CC
MMBD4148SE
OT-23
4148CA
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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79Cxxx
BZX79Cxxets.
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Untitled
Abstract: No abstract text available
Text: Li cen sed b y O N Se m i co n d u ct o r , A t r adem ar k of se m icon d u ct or Co m p o n e n t s I n du st r ies, LLC for Z e n e r Te ch n olog y and Pr od u ct s. TAK CHEONG 1 .3 W a t t D O- 4 1 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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85Cxxx
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IRG4BC20U
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20U
O-220AB
O-220Ai
IRG4BC20U
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IRGPF50F
Abstract: al c269
Text: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF50F
10kHz)
O-247AC
C-272
IRGPF50F
al c269
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IRLIZ34N
Abstract: MOSFET IRF 630
Text: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ34N
IRLIZ34N
MOSFET IRF 630
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zener diode, zl 33
Abstract: 20v surface mount zener
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range
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200mW
OD-323
zener diode, zl 33
20v surface mount zener
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sod-323 Marking ZD
Abstract: No abstract text available
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range
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200mW
OD-323
sod-323 Marking ZD
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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52xxB
1N52xxB
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IRG4BC30UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4BC30UD
O-220AB
IRG4BC30UD
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IRLZ24N
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V
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IRLZ24N
O-220Y
IRLZ24N
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irl3803 equivalent
Abstract: 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF
Text: Previous Datasheet Index Next Data Sheet PD - 9.1320A IRLI3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
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IRLI3803
irl3803 equivalent
71A marking
IRL3803
IRLI3803
irf 680
MOSFET 150 N IRF
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ICE2AS01 equivalent
Abstract: ICE2AS01 CoolMOS Power Transistor E2AS01 ICE2AS01G ICE2AS01 power 65VP
Text: at a Da ta sheet, Version 2.1, F ebruary 2001 D ICE2AS01 re li m in ar y Off-Line SMPS Current Mode Controller P P o w e r M a n a g em e n t & S u p p l y N e v e r s t o p t h i n k i n g . ICE2AS01 Revision History: 2001-02-28 Previous Version: First One
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ICE2AS01
ICE2AS01 equivalent
ICE2AS01
CoolMOS Power Transistor
E2AS01
ICE2AS01G
ICE2AS01 power
65VP
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IRG4PC30UD
Abstract: 6000uf igbt 600V
Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
6000uf
igbt 600V
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f1010e
Abstract: IRL2203S AN-994 IRL2203N 42-A60
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1091A IRL2203S HEXFET Power MOSFET Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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IRL2203S
f1010e
IRL2203S
AN-994
IRL2203N
42-A60
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AN-994
Abstract: IRF1010N IRF1010NS IRF530S
Text: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω
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IRF1010NS
AN-994
IRF1010N
IRF1010NS
IRF530S
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Untitled
Abstract: No abstract text available
Text: AN 522: Implementing Bus LVDS Interface in Supported Altera Device Families AN-522-2.2 Application Note This application note describes how to implement the Bus LVDS BLVDS interface in the supported Altera device families for high-performance multipoint
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AN-522-2
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T6718
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 Cl I -I C- I I C2 L I. c2 L I- - 1—1 Bi —I—I NPN I - I Ei — LI ZO B2 E2 pnp PARTMARKING DETAIL - T6718 ABSOLUTE MAXIMUM RATINGS.
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ZDT6718
T6718
-100m
FMMT718
T6718
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2757T, ¿¿PC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR MOBILE COMMUNICATIONS DESCRIPTION T he ^¡PC 2757T and ^¡PC 2758T are silicon m o n o lith ic in te g ra te d circu its d e sig n e d as 1st d o w n -co n ve rte rs fo r L
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uPC2757T
PC2758T
2757T
2758T
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Untitled
Abstract: No abstract text available
Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD439 Rating VcBO BD441 Collector Emitter Voltage
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BD439/441
BD440,
BD442
BD439
BD441
BD441
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irfp45
Abstract: No abstract text available
Text: IRFP450 Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance ♦ lD = 0 .4 Q 14 A Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a
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IRFP450
irfp45
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Untitled
Abstract: No abstract text available
Text: IRFP450A Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance lD = ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a
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IRFP450A
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Untitled
Abstract: No abstract text available
Text: EM ICO N D U CTD R i MBR2535CT - MBR2560CT 0.185 4.70 0.175(4.44) 0.055(1.40) 0.045(1.14) • Low pow er loss, high efficiency. • High surge capacity. 0.27(6.86) 0.23(5.84) • For use in low voltage, high frequency inverters, free wheeling, and polarity
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MBR2535CT
MBR2535CT
MBR2560CT
O-220AB
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Untitled
Abstract: No abstract text available
Text: KSE44H SERIES NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER APPLICATION AND SWITCHING • Low Col lector-Emitter Saturation Voltage: VCE sat = 1V (MAX)@8A • Fast Switching Speeds ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : KSE44H 1,2
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KSE44H
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