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    DATASHEET TRANSISTOR REPLACEMENT Search Results

    DATASHEET TRANSISTOR REPLACEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    DATASHEET TRANSISTOR REPLACEMENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRG4PC40S

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1465 IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    Original     		IRG4PC40S O-247AC O-247AC IRG4PC40S PDF

    IRG4BC40S

    Abstract: TO-220AB IRG4BC40S
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    Original     		IRG4BC40S O-220AB O-220AB IRG4BC40S TO-220AB IRG4BC40S PDF

    IGBT IRG4PC50UD

    Abstract: IRG4PC50UD
    Text: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		IRG4PC50UD O-247AC IGBT IRG4PC50UD IRG4PC50UD PDF

    IRG4PC30UD

    Abstract: 6000uf igbt 600V
    Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		IRG4PC30UD O-247AC IRG4PC30UD 6000uf igbt 600V PDF

    IRG4PC50FD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4PC50FD O-247AC IRG4PC50FD PDF

    IRG4BC30FD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4BC30FD O-220AB IRG4BC30FD PDF

    IRG4PC40UD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1467C IRG4PC40UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		1467C IRG4PC40UD O-247AC IRG4PC40UD PDF

    IRG4PC40FD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1464 IRG4PC40FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4PC40FD O-247AC IRG4PC40FD PDF

    IRG4BC30UD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		IRG4BC30UD O-220AB IRG4BC30UD PDF

    IRG4PC30FD

    Abstract: 5C100A
    Text: Previous Datasheet Index Next Data Sheet PD 9.1460 IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4PC30FD O-247AC IRG4PC30FD 5C100A PDF

    IRG4PC50F

    Abstract: 80UF
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1468A IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC50F O-247AC O-247AC IRG4PC50F 80UF PDF

    IRG4BC30U

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		1452C IRG4BC30U O-220AB O-220Alim IRG4BC30U PDF

    1461C

    Abstract: IRG4PC30U
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		1461C IRG4PC30U O-247AC O-247Am 1461C IRG4PC30U PDF

    IRG4PC50U

    Abstract: irg4pc50u equivalent
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1470D IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		1470D IRG4PC50U O-247AC O-247Am IRG4PC50U irg4pc50u equivalent PDF

    IRG4BC40F

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1454 IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC40F O-220AB O-220AB IRG4BC40F PDF

    IRG4BC20U

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20U O-220AB O-220Ai IRG4BC20U PDF

    IRG4PC40F

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1463 IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC40F O-247AC O-247AC IRG4PC40F PDF

    IRG4PC30F

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1459 IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC30F O-247AC O-247AC IRG4PC30F PDF

    IRG4BC30F

    Abstract: 555 triangular wave
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30F O-220AB O-220AB IRG4BC30F 555 triangular wave PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44164184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0015EJ0200 Rev.2.00 October 6, 2011 Description The μPD44164184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PD44164184B 18M-BIT PD44164184B 576-word 18-bit 165-pin R10DS0015EJ0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0120EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46184184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PD46184184B 18M-BIT PD46184184B 576-word 18-bit 165-pin R10DS0120EJ0200 PD46184184BF1-EQ1 PDF

    IRG4PC40U

    Abstract: S3000
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		1466C IRG4PC40U O-247AC IRG4PC40U S3000 PDF

    TRANSISTOR SMD 9bb

    Abstract: smd transistor 2f smd transistor 9BB smd transistor 2f x mosfet 4,5a 023 12v TRANSISTOR SMD 2F 2f smd transistor IRFN3710 smd transistor AR smd diode 2F
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary Ω , HEXFET 100 Volt, 0.028Ω Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve


    Original     		IRFN3710 TRANSISTOR SMD 9bb smd transistor 2f smd transistor 9BB smd transistor 2f x mosfet 4,5a 023 12v TRANSISTOR SMD 2F 2f smd transistor IRFN3710 smd transistor AR smd diode 2F PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44164184B-A 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0015EJ0100 Rev.1.00 Jan 5, 2011 Description The μPD44164184B-A is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PD44164184B-A 18M-BIT R10DS0015EJ0100 PD44164184B-A 576-word 18-bit 165-pin PDF