APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
|
Original
|
PDF
|
MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
|
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
|
Original
|
PDF
|
MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
|
DIM1600FSS17-A000
Abstract: No abstract text available
Text: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)
|
Original
|
PDF
|
DIM1600FSS17-A000
DS5833-1
LN23957)
DIM1600FSS17-A000
|
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
|
Original
|
PDF
|
MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
|
data sheet IC 7400
Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon
|
Original
|
PDF
|
DIM1600FSM17-
DS5455-3
LN26327)
data sheet IC 7400
IC 7400 datasheet
information OF ic 7400
DIM1600FSM17-A000
|
74151 waveform
Abstract: CY7C340 5128LC 7C340 programming 7C340 CY7C341B CY7C342B CY7C344 CY7C346 FLASH370
Text: 7c340: 12-13-90 Revision: October 19, 1995 CY7C340 EPLD Family Multiple Array Matrix HighĆDensity EPLDs called expander product terms. These exĆ Ċ VHDL simulation ViewSimt Ċ Available on PC and Sun platforms panders are used and shared by the macroĆ
|
Original
|
PDF
|
7c340:
CY7C340
35aproductmacrocell.
74151 waveform
5128LC
7C340 programming
7C340
CY7C341B
CY7C342B
CY7C344
CY7C346
FLASH370
|
IC 7400 datasheet
Abstract: data sheet 7400 IC data sheet IC 7400 internal circuit diagram of 7400 IC DIM600XSM45-F000 110nF
Text: Preliminary Data DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability
|
Original
|
PDF
|
DIM600XSM45-F000
DS5874-1
LN24333)
IC 7400 datasheet
data sheet 7400 IC
data sheet IC 7400
internal circuit diagram of 7400 IC
DIM600XSM45-F000
110nF
|
ge traction motor
Abstract: DIM600XSM45-F000
Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module
|
Original
|
PDF
|
DIM600XSM45-F000
DS5874-1
LN24724)
ge traction motor
DIM600XSM45-F000
|
internal diagram of 7400 IC
Abstract: DIM1600FSM17-A000
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
2400y
internal diagram of 7400 IC
DIM1600FSM17-A000
|
DIM1600FSM17-A000
Abstract: DS5455-2
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5455-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.0 March 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-1
DS5455-2
DIM1600FSM17-A000
|
DIM1600FSM17-A000
Abstract: No abstract text available
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
DS5455-3
3300Varantee
DIM1600FSM17-A000
|
Untitled
Abstract: No abstract text available
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-1
DIM1600FSM17-A000
|
pin DIAGRAM OF IC 7400
Abstract: data sheet IC 7400 IC 7400 datasheet 12v to 1000v inverters circuit diagrams IC 7400 pin diagram bi-directional switches IGBT internal circuit diagram of 7400 IC internal diagram of 7400 IC us 7400 ic DIM1600FSM17-A000
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
DS5455-3
3300Varantee
pin DIAGRAM OF IC 7400
data sheet IC 7400
IC 7400 datasheet
12v to 1000v inverters circuit diagrams
IC 7400 pin diagram
bi-directional switches IGBT
internal circuit diagram of 7400 IC
internal diagram of 7400 IC
us 7400 ic
DIM1600FSM17-A000
|
GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
|
|
application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
application notes igbt induction heating
VS-GA100NA60UP
|
FZ1200r16KF4
Abstract: siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS
Text: Technical Improvements in 1700V High Power Modules with Rated Currents up to 2400A“ * O. Schilling, F. Auerbach , R. Spanke, M. Hierholzer eupec GmbH, Max Planck Str. 1, D-59581 Warstein-Belecke * Siemens AG, Semiconductor-PS, Balanstraße 73, D-81541 Munich
|
Original
|
PDF
|
D-59581
D-81541
FZ1200r16KF4
siemens igbt
IGBT FZ1200
IGBT Power Module siemens ag
eupec fz1200
FZ1200R16
FZ1200R17KF6
driver igbt SIEMENS
7400A
SCHEMATIC POWER SUPPLY WITH IGBTS
|
TRANSISTOR TC 100
Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
TRANSISTOR TC 100
GA100NA60UP
ga100na60
bipolar transistor td tr ts tf
6000uf
|
VS-GA100NA60UP
Abstract: No abstract text available
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100NA60UP
|
application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
application notes igbt induction heating
VS-GA100NA60UP
|
VS-GA100NA60UP
Abstract: No abstract text available
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100NA60UP
|
Untitled
Abstract: No abstract text available
Text: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance
|
OCR Scan
|
PDF
|
CY7C340
CY7C34X)
65-micron
CY7C34XB)
1076-compliant
CY3340
CY7C341
CY3340F
CY3342
|
25128LI
Abstract: 5130LC vhdl 74161 5128LC 5192LC
Text: fax id: 6100 p vXpX : v«*1 C Y 7 C 3 4 0 EP L D Fami l y - Multiple Array Matrix High-Density EPLDS tion of innovative architecture and state-of-the-art process, the MAX EPLDs offer LSI density without sacrificing speed. Feat ures • E r a s a b l e , u s e r - c o n f i g u r a b l e C M O S E P L D s c a p a b l e of
|
OCR Scan
|
PDF
|
CY7C342B.
25128LI
5130LC
vhdl 74161
5128LC
5192LC
|
Untitled
Abstract: No abstract text available
Text: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)
|
OCR Scan
|
PDF
|
CY7C340
CY7C34X)
65-micron
CY7C34XB)
7C342
342-30H
7C342â
35HMB
|
epm5032dc
Abstract: 5130Q 5128A 74151 waveform 7C340 epld 342B rc 74151
Text: CY7C340 EPLD Family •= CYPRESS Multiple Array Matrix High-Density EPLDs Features — VHDL sim ulation ViewSim M • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions — Available on PC and Sun platforms
|
OCR Scan
|
PDF
|
CY7C34X)
65-micron
CY7C34XB)
CY7C340
5130LC
5130L
5130LI
5130QC
5130Q
epm5032dc
5128A
74151 waveform
7C340 epld
342B
rc 74151
|