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    DATE CODE MARKING NEC TRANSISTOR Search Results

    DATE CODE MARKING NEC TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DATE CODE MARKING NEC TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N055

    Abstract: date code marking NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR code marking NEC NEC TRANSISTOR MARKING CODE nec 80N055 nec 2502 4 pin NP80N055MLE 80n05
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP80N055MLE is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin Transistor designed for high current switching


    Original     		PDF NP80N055MLE NP80N055MLE O-220 MP-25K) O-220) 80N055 date code marking NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR code marking NEC NEC TRANSISTOR MARKING CODE nec 80N055 nec 2502 4 pin 80n05

    NEC TRANSISTOR MARKING CODE

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin PACKING PACKAGE Tape TO-252(MP-3ZK)


    Original     		PDF NP55N03SUG NP55N03SUG O-252 O-252) NEC TRANSISTOR MARKING CODE

    NEC TRANSISTOR MARKING CODE

    Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33 NE685M33-T3 PU10341EJ01V0DS NEC TRANSISTOR MARKING CODE date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold package


    Original     		PDF NE851M33 NE851M33 NE851M33-T3 PU10343EJ01V0DS date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf

    code marking NEC

    Abstract: date code marking NEC NEC MARKING CODE
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold package


    Original     		PDF NE687M33 NE687M33 NE687M33-T3 PU10342EJ01V0DS code marking NEC date code marking NEC NEC MARKING CODE

    PS9801

    Abstract: NEC MARKING CODE code marking NEC NT931 9801 so-8 NEC 9801 date code marking NEC nec inverter
    Text: PHOTOCOUPLER PS9801 0.6 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE 8-PIN SSOP SO-8 PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS9801 is an optically coupled isolator containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.


    Original     		PDF PS9801 PS9801 NEC MARKING CODE code marking NEC NT931 9801 so-8 NEC 9801 date code marking NEC nec inverter

    EN60747-5-2

    Abstract: PS8821-1 PS8821-2 VDE0884 PS88211F
    Text: PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.


    Original     		PDF PS8821-1 PS8821-1, PS8821-2 PS8821-1 EN60747-5-2 VDE0884 PS88211F

    k4202

    Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33-T3 date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR

    M33 TRANSISTOR

    Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE687M33 NE687M33-T3 M33 TRANSISTOR NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3

    PS2506-4

    Abstract: ps2506-4-a PS2506L-1-E3 PS2506L-2 PS2506L-2-E3 PS2506L-4 PS2506-1 PS2506-2 PS2506L-1 PS2506-2-A
    Text: PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode


    Original     		PDF PS2506-1 PS2506L-1 PS2506-1, PS2506L-1, PS2506L-1-E3, PS2506L-2-E3, PS2506-4 ps2506-4-a PS2506L-1-E3 PS2506L-2 PS2506L-2-E3 PS2506L-4 PS2506-2 PS2506-2-A

    transistor m33

    Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE851M33 NE851M33-T3 transistor m33 NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC

    transistor K4145

    Abstract: 2sk4145
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145

    90n04

    Abstract: NEC TRANSISTOR MARKING CODE NP90N04MUG 90n04 UG NP90N04MUG-S18-AY D1866 DIODE MARKING code UG 45
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP90N04MUG NP90N04MUG NP90N04MUG-S18-AY O-220 MP-25K) O-220) 90n04 NEC TRANSISTOR MARKING CODE 90n04 UG NP90N04MUG-S18-AY D1866 DIODE MARKING code UG 45

    K4201

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 K4201

    NP70N04MUG

    Abstract: 70N04 NP70N04MUG-S18-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) 70N04 NP70N04MUG-S18-AY

    NEC 60N04

    Abstract: 60n04 NP60N04MUG NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP60N04MUG NP60N04MUG NP60N04MUG-S18-AY O-220 MP-25K) O-220) NEC 60N04 60n04 NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE

    code marking NEC

    Abstract: date code marking NEC g1683
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2610 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on.


    Original     		PDF PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683

    82n055

    Abstract: nec 82n055 nec82n055 nec 2502 4 pin 82N055UG NP82N055MUG MP transistor 82n055 NP82N055MUG-S18-AY date code marking NEC D1980
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055MUG, NP82N055NUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION


    Original     		PDF NP82N055MUG, NP82N055NUG NP82N055MUG NP82N055NUG NP82N055MUG-S18-AY NP82N055NUG-S18-AY O-220 MP-25K) O-262 MP-25SK) 82n055 nec 82n055 nec82n055 nec 2502 4 pin 82N055UG MP transistor 82n055 NP82N055MUG-S18-AY date code marking NEC D1980

    90N04

    Abstract: NP90N04VLG NEC TRANSISTOR MARKING CODE MARKING LG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VLG-E1-AY NP90N04VLG-E2-AY


    Original     		PDF NP90N04VLG NP90N04VLG NP90N04VLG-E1-AY NP90N04VLG-E2-AY O-252 M8E0904E 90N04 NEC TRANSISTOR MARKING CODE MARKING LG

    90n04

    Abstract: NP90N04VDG 4600 fet transistor NP90N04V
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VDG-E1-AY NP90N04VDG-E2-AY


    Original     		PDF NP90N04VDG NP90N04VDG NP90N04VDG-E1-AY NP90N04VDG-E2-AY O-252 M8E0904E 90n04 4600 fet transistor NP90N04V

    160N04

    Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		PDF NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 160N04 D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY To-263-7 MP-25ZT

    82N06

    Abstract: NP82N06PDG-E1-AY NP82N06PDG MP-25ZP NP82N06PDG-E2-AY nec 41-A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PDG-E1-AY


    Original     		PDF NP82N06PDG NP82N06PDG NP82N06PDG-E1-AY NP82N06PDG-E2-AY O-263 MP-25ZP) O-263) 82N06 NP82N06PDG-E1-AY MP-25ZP NP82N06PDG-E2-AY nec 41-A

    NEC 110N04

    Abstract: 110N04 NP110N04PUJ 110n04 nec v9500 MP-25ZP NEC TRANSISTOR MARKING CODE MARKING E2B D1973
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N04PUJ-E1B-AY


    Original     		PDF NP110N04PUJ NP110N04PUJ NP110N04PUJ-E1B-AY NP110N04PUJ-E2B-AY O-263 MP-25ZP) AEC-Q101 O-263) NEC 110N04 110N04 110n04 nec v9500 MP-25ZP NEC TRANSISTOR MARKING CODE MARKING E2B D1973