c1124
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► SYNSTRIP Multi-Layer Technology ► Patented REL-PRO Technology
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SGS-5-17
-10dBm
30MHz
14dBm
17dBm
19dBm
c1124
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Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology
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SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
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RF Microwave schottky Diode mixer
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology
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SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
10dBm
RF Microwave schottky Diode mixer
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Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology
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SGS-5-17
-10dBm
30MHz
14dBm
17dBm
19dBm
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Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology RF=-10dBm, IF=30MHz, IF=LO-RF
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SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
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100MHZ
Abstract: SGS-5-13
Text: DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology 3 - 19 GHz RF=-10dBm IF=30MHz IF=LO-RF
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SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
100MHZ
SGS-5-13
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RF Microwave schottky Diode mixer
Abstract: synergy series package Synergy Microwave mixer 100MHZ SGS-5-10 1260-0 microwave mixer diode Microwave schottky Diode mixer
Text: DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology RF=-10dBm, IF=30MHz, IF=LO-RF
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SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
RF Microwave schottky Diode mixer
synergy series
package Synergy Microwave mixer
100MHZ
SGS-5-10
1260-0
microwave mixer diode
Microwave schottky Diode mixer
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RF Microwave schottky Diode mixer
Abstract: 100MHZ SGS-5-17 rf207
Text: DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology RF=-10dBm IF=30MHz IF=LO-RF
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SGS-5-17
-10dBm
30MHz
14dBm
RF Microwave schottky Diode mixer
100MHZ
SGS-5-17
rf207
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Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology 3 - 19 GHz
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SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
10dBm
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Untitled
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology
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SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
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Untitled
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MIXER SURFACE MOUNT MODEL: SGM-2-13 WIDE BANDWIDTH - GALAXY SERIES LO Frequency > RF Frequency IF=50 MHz, RF=-10 dBm 10 9 8 Conversion Loss (dB) FEATURES: ► High Reliability ► Low Construction Cost ► Small Size, Surface Mount
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SGM-2-13
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DB207S
Abstract: PER 203S 201S 202S 203S 204S DB201S DB207 DB 207S 206s
Text: BL GALAXY ELECTRICAL DB201S - DB207S VOLTAGE RANGE: 50 - 1000 V CURRENT: 2.0 A SILICON BRIDGE RECTIFIERS FEATURES DB - S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board
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DB201S
DB207S
MIL-STD-202
20URRENT,
300uS
DB207S
PER 203S
201S
202S
203S
204S
DB207
DB 207S
206s
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB201S - DB207S VOLTAGE RANGE: 50 - 1000 V CURRENT: 2.0 A SILICON BRIDGE RECTIFIERS FEATURES DB - S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board
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DB201S
DB207S
MIL-STD-202
205RWARD
300uS
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SGM-2-13
Abstract: rf2520 SGM SERIES
Text: DOUBLE-BALANCED MIXER SURFACE MOUNT MODEL: SGM-2-13 WIDE BANDWIDTH - GALAXY SERIES LO Frequency > RF Frequency IF=50 MHz, RF=-10 dBm 10 9 8 Conversion Loss (dB) FEATURES: ► High Reliability ► Low Construction Cost ► Small Size, Surface Mount ► RoHS Compliant
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SGM-2-13
SGM-2-13
rf2520
SGM SERIES
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB151S - - - DB157S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Glass passivated chip junctions
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DB151S
DB157S
MIL-STD-202
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153s
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB151S - DB157S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board
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DB151S
DB157S
MIL-STD-202
153s
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151S
Abstract: DB151S DB157S
Text: BL GALAXY ELECTRICAL DB151S - - - DB157S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV Surge overload rating to 30 Amperes peak 1± 0.1 7.9± 0.2 0.3 Reliable low cost construction utilizing molded
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DB151S
DB157S
MIL-STD-202
151S
DB157S
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DB101S-DB107S
Abstract: DB105S DB107S 101S 0287002 102S 103S 104S 106S DB101S
Text: BL GALAXY ELECTRICAL DB101S - DB107S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.0 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board
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DB101S
DB107S
MIL-STD-202
300uS
DB101S-DB107S
DB105S
DB107S
101S
0287002
102S
103S
104S
106S
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turbo codes matlab code
Abstract: PHASE SHIFT KEYING dPSK matlab code for turbo product code ANTPC01 encoder verilog coding ADVANCED HARDWARE ARCHITECTURES turbo encoder circuit ANTPC02 galaxy note Turbo Decoder
Text: . . Advanced Hardware Architectures, Inc. 2365 NE Hopkins Court Pullman, WA 99163-560 509.334.1000 Fax:509.334.9000 e-mail:sales@aha.com http://www.aha.com ANTPC06-1099 . . . . . . . / . . . Advanced Hardware Architectures, Inc . . . , , Galaxy . . . .
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ANTPC06-1099
ANTPC01)
ANTPC01
ANTPC02
AHA4501
ANTPC03
ANTPC04
turbo codes matlab code
PHASE SHIFT KEYING dPSK
matlab code for turbo product code
ANTPC01
encoder verilog coding
ADVANCED HARDWARE ARCHITECTURES
turbo encoder circuit
ANTPC02
galaxy note
Turbo Decoder
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.
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2SC2712
2SA1162.
OT-23
BL/SSSTC021
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sot-23 Marking LG
Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.
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2SC2712
2SA1162.
OT-23
BL/SSSTC021
sot-23 Marking LG
2SC2712
SOT 23 LY
LY SOT23
transistor marking LG
MARKING Lg SOT23
2SA1162
marking LG sot-23
marking LY sot-23
transistor marking code lg
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MMDT3946
Abstract: PNP 3906 SOT23 sot363 mmdt3946
Text: BL Galaxy Electrical Production specification Small Signal Surface Mount Transistor FEATURES z Complementary pair. z One 3904-Type NPN MMDT3946 Pb Lead-free One 3906-Type PNP z Ideal for low power amplification and switching. z Ultra-Small surface mount package
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MMDT3946
3904-Type
3906-Type
OT-363
OT-23
BL/SSSTE004
MMDT3946
PNP 3906 SOT23
sot363 mmdt3946
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transistor code R24
Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS
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2SC3356W
OT-323
R23/R24/R25
200taxial
BL/SSSTF001
transistor code R24
R24 marking code transistor
SOT R23
Transistor R25
r25 transistor
transistor R24
r23 transistor
SOT R25
2SC3356W
R24 transistor
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marking r25 NPN
Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.
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2SC4226W
150mW)
OT-323
r23/r24/r25
BL/SSSTF042
marking r25 NPN
NPN R25
transistor code R24
R24 marking code transistor
SOT R23
npn marking r25
Transistor R25
R24 marking
SOT R25
2SC4226W
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