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    KEMET Corporation ALS80A471DB450

    CAP ALUM 470UF 20% 450V SCREW CH
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    DigiKey ALS80A471DB450 Bulk 91 1
    • 1 $18.75
    • 10 $13.662
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    • 1000 $9.58562
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    Mouser Electronics ALS80A471DB450 139
    • 1 $15.48
    • 10 $14.32
    • 100 $10.97
    • 1000 $10.3
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    RS ALS80A471DB450 Bulk 100
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    KEMET Corporation ALS30A221DB450

    CAP ALUM 220UF 20% 450V SCREW CH
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    DigiKey ALS30A221DB450 Box 84 1
    • 1 $16.98
    • 10 $12.294
    • 100 $9.7955
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    Mouser Electronics ALS30A221DB450 40
    • 1 $11.44
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    Newark ALS30A221DB450 Bulk 139 1
    • 1 $12.13
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    RS ALS30A221DB450 Bulk 100
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    TME ALS30A221DB450 200
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    Avnet Abacus ALS30A221DB450 31 Weeks 100
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    KEMET Corporation ALS70A511DB450

    CAP ALUM 510UF 20% 450V SCREW CH
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    DigiKey ALS70A511DB450 Bulk 73 1
    • 1 $15.28
    • 10 $11.102
    • 100 $8.9806
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    Mouser Electronics ALS70A511DB450 36
    • 1 $14.9
    • 10 $11.11
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    Newark ALS70A511DB450 Bulk 100 1
    • 1 $15.09
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    TME ALS70A511DB450 100
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    Avnet Abacus ALS70A511DB450 31 Weeks 100
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    Dremel DB4568

    DIA BLADE MARBLE PREMIUM PLUS 4-
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    DigiKey DB4568 Bulk 1
    • 1 $58.69
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    Gowanda Electronics Corporation DB4-563

    RADIAL POWER LINE CHOKE
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    DigiKey DB4-563 Bulk 31
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    • 100 $21.85548
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    Onlinecomponents.com DB4-563
    • 1 $28.05
    • 10 $26.24
    • 100 $23.24
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    DB45 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DB4516 Amphenol Connector Accessories Strain Relief Scan PDF

    DB45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gsm module

    Abstract: RJ12 connector Serial DB9 to RJ12 gsm module datasheet TC63 modem siemens modem gsm mc55 siemens TC65 RJ12 pin out RJ12 db9 MC45 siemens gsm
    Text: Technical Description ACTE DB45/75 Development kit for Siemens GSM/GPRS/EDGE modules Acte DK45/75 is a starter kit for developing wireless application in the GSM band using Siemens GSM/GPRS/EDGE modules MC75, TC65, TC63 and MC55/56. The development kit contains all the necessary parts and documentation


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    PDF DB45/75 DK45/75 MC55/56. RS232 -50DP GS203 gsm module RJ12 connector Serial DB9 to RJ12 gsm module datasheet TC63 modem siemens modem gsm mc55 siemens TC65 RJ12 pin out RJ12 db9 MC45 siemens gsm

    lapp cable current rating

    Abstract: H07V-K DB4520001EN X07V-K HD 21.3 Lapp cable LAPP conduit lapp
    Text: U.I. Lapp GmbH DATA SHEET DB4520001EN valid from: 2010-08-20 H07V-K X07V-K MAKE-UP TYPE H07V-K CERTIFICATION H07V-K ◄HAR► (arrowheads can be blank also) according to harmonisation document HD 21.3/VDE 0281-3 APPLICATION (HD 516/VDE 0298-300) The single-conductor cable H07V-K is a flexible, non-sheathed cable for fix, internal wiring, that is, for fixed installation in pipes on, in and


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    PDF DB4520001EN H07V-K X07V-K) H07V-K 516/VDE 60332-1-2/EN 60332-1-2/VDE lapp cable current rating DB4520001EN X07V-K HD 21.3 Lapp cable LAPP conduit lapp

    KSC5601

    Abstract: D8A1 KS0040 d6a1 16f7 1B60 H124 128X8 16X16 8X16
    Text: KS0040 65 COM / 132 SEG DRIVER & CONTROLLER FOR STN LCD APRIL. 1999. KS0040 65COM/132SEG DRIVER & CONTROLLER FOR STN LCD KS0040 Specification Revision History Version 0.0 1.0 1.1 2 Content Original 1 Changed function MPU interface pin & method are changed.


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    PDF KS0040 65COM/132SEG KS0040 KSC5601 D8A1 d6a1 16f7 1B60 H124 128X8 16X16 8X16

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


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    PDF 128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845

    da53

    Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where


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    PDF PD488385 da53 uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1

    4458D

    Abstract: INTF2300 capacitor ceramic variable RF power supply ic 1507 toko balun MAX2310 MAX2310EVKIT MAX2312 MAX2312EVKIT MAX2314
    Text: 19-1507; Rev 0a; 8/99 MAX2310/MAX2314 Evaluation Kits The MAX2310/MAX2314 evaluation kits EV kits simplify testing of the MAX2310/MAX2314 IF receivers. These kits allow evaluation of the devices’ variable-gain amplifier (VGA), I/Q demodulator, dual-band voltage-controlled oscillators (VCOs), synthesizer, 3-wire programming interface and power-management features.


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    PDF MAX2310/MAX2314 MAX2310 MAX2314 INTF2300 DB25M MAX2310 4458D INTF2300 capacitor ceramic variable RF power supply ic 1507 toko balun MAX2310EVKIT MAX2312 MAX2312EVKIT

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF 600MHz DL-0118-07 direct rdram rambus 1200

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


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    PDF 512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39

    da53

    Abstract: DB26
    Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


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    PDF 8Mx16/18x4i) DL0117-010 da53 DB26

    METAL OXIDE VARISTOR application note on AC

    Abstract: MOV surge on AC mains MOV SUPPRESSOR Transient Voltage Suppression Devices, Harris Metal-Oxide Varistor METAL OXIDE VARISTOR application note on AC mains varistor 6kv 3ka V130LA10A harris varistor transient voltage suppressor diode
    Text: Harris Semiconductor No. AN9306 Harris MOVs August 1993 The New “C” III Series of Metal Oxide Varistors Authors: Martin Corbett and Paul Durnin Introduction The development of more sophisticated and less expensive semiconductors over the last 5 - 10 years has resulted in a


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    PDF AN9306 DB450. E75961 LR91788 METAL OXIDE VARISTOR application note on AC MOV surge on AC mains MOV SUPPRESSOR Transient Voltage Suppression Devices, Harris Metal-Oxide Varistor METAL OXIDE VARISTOR application note on AC mains varistor 6kv 3ka V130LA10A harris varistor transient voltage suppressor diode

    Surgector

    Abstract: DB450 P3100SB UL497B P0640SB surge GR-1089 SGT0640SBT V-I characteristics of SIDAC P1300
    Text: An Introduction to the Surface Mount Surgector TVS Technical Brief July 1999 TB373.1 Author: Don Tidey [ /Title TB37 3 /Subject (An Introduction to the Surface Mount Surgec tor TVS) /Autho r () /Keywords (Harris Suppression Products, surface mount surgect


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    PDF TB373 GR1089, O-202 DO-214AA UL1950, GR-1089, DB450, DO214AA Surgector DB450 P3100SB UL497B P0640SB surge GR-1089 SGT0640SBT V-I characteristics of SIDAC P1300

    HYB25M144180C-653

    Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
    Text: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.


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    PDF 128/144-MBit 128/144-Mbit TEST77 TEST78 HYB25M144180C-653 HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram

    diode t29

    Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
    Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including


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    PDF EDR2518ABSE EDR2518AB EDR2518AB 1066MHz 288Mbits 800MHz 9375ns M01E0107 diode t29 EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E

    da53

    Abstract: DB26 BE1210 DB62 ROP10
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


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    PDF 256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz DL0060 DL0060 da53 DB26 BE1210 DB62 ROP10

    LA25-P

    Abstract: DC1931 SEAM-10X40 LTM9013
    Text: DEMO MANUAL DC1931B LTM9013 300MHz Wideband/DPD Receiver Description Demonstration circuit DC1931 is a 300MHz wideband/ digital pre-distortion DPD receiver subsystem featuring the LTM 9013. The DC1931 card is designed to plug into the DC1371 data acquisition demo board. It is configured


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    PDF DC1931B LTM9013 300MHz DC1931 DC1371 DC1931; LTM9013 dc1931bfa LA25-P SEAM-10X40

    BS2779 BSP THREAD

    Abstract: IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok
    Text: Amphenol Cable Glands and Cord Grips 12-055 Amphenol Table of Contents Introduction Amphenol® Cable Glands Page Number 1 2-3 ATEX Approved Glands Featuring Elastometric Seals EX-20 4-5 EX-25 6-7 EE-30 8-9 EX-35 10-11 EX-40 12-13 EX-45 14-15 EE-RG 16-17


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    PDF EX-20 EX-25 EE-30 EX-35 EX-40 EX-45 EX-50 EX-55 EX-60 EX-65 BS2779 BSP THREAD IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok

    RDRAM Clock

    Abstract: No abstract text available
    Text: Direct RDRAM PRELIMINARY 128/144-Mbit 256Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


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    PDF 128/144-Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz RDRAM Clock

    Untitled

    Abstract: No abstract text available
    Text: DB4 SERIES E 1.10 max. 27.94 mm .500 ± .062 PART NUMBER INDUCTANCE µH @ 1kHz 38.10 mm Designed for switching supply applications. 40 standard items. Inductance range 10µH to 15000µH. Current ratings from .85 to 22.1 amps. Epoxy insulated core. Operating temperature: -55° to +125°C.


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    PDF DB4-102 DB4-122 DB4-152 DB4-182 DB4-222 DB4-272 DB4-332 DB4-392 DB4-472 DB4-562

    METAL OXIDE VARISTOR application note on AC mains

    Abstract: MOV surge on AC mains varistor 6kv 3ka mov 6kv 3ka varistor 6kv varistor application note on AC mains C280A Harris Semiconductor TRANSIENT SURGE SUPPRESSOR metal oxide varistor DC "Transient Voltage Suppressor"
    Text: The “C” III Series of Metal Oxide Varistors SEE TION 1, A M 931 FOR D IN TES AN E T A N NO UPD 69 FOR LICATIO 8, AN97 P 3 P 9 A AN August 1999 AN9306.2 Introduction The Transient Environment Transient voltages can result from the sudden release of previously stored energy. Transients are sudden short term


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    PDF AN9306 LR91788 DB450. METAL OXIDE VARISTOR application note on AC mains MOV surge on AC mains varistor 6kv 3ka mov 6kv 3ka varistor 6kv varistor application note on AC mains C280A Harris Semiconductor TRANSIENT SURGE SUPPRESSOR metal oxide varistor DC "Transient Voltage Suppressor"

    CI 3060 elsys

    Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
    Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.


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    PDF KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60

    hyundai rdram

    Abstract: REF05
    Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and


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    PDF HYRDU64164 HYRDU72184 64/72Mbit 600MHz 800MHz Mar98 hyundai rdram REF05

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,


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    PDF TC59R7218XB 72-Mbit 600MHz 800MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where


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    PDF PD488448, JUPD488448 128M-bit PD488488 144M-bit 14072EJ1V0D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary STP2220ABGA S un M ic r o e l e c t r o n ic s J u ly 1997 U2S UPA-to-SBus Interface DATA SHEET D e s c r ip t io n The STP2220ABGA U2S ^ device bridges UPA- UltraSPARC Port Architecture to the SBus. U2S, is the prim ary connection betw een the UPA port (including UltraSPARC-1 processors and m em ory) and the SBus


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    PDF STP2220ABGA STP2220ABGA 16-entry