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    Comchip Technology Corporation Ltd CDBB3200-HF

    DIODE SCHOTTKY 200V 3A DO214AA
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    DigiKey CDBB3200-HF Cut Tape 32,024 1
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    Karl Kruse GmbH & Co KG CDBB3200-HF 21,000
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    NAC CDBB3200-HF 24,000 1
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    Comchip Technology Corporation Ltd CDBB3100-HF

    DIODE SCHOTTKY 100V 3A DO214AA
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    DigiKey CDBB3100-HF Cut Tape 7,579 1
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    Mouser Electronics CDBB3100-HF 3,451
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    Karl Kruse GmbH & Co KG CDBB3100-HF 6,000
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    NAC CDBB3100-HF 6,000 1
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    Chip 1 Exchange CDBB3100-HF 6,000
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    Chip1Stop CDBB3100-HF 304
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    Comchip Technology Corporation Ltd CDBB3150-HF

    DIODE SCHOTTKY 150V 3A DO214AA
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    DigiKey CDBB3150-HF Cut Tape 4,679 1
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    Comchip Technology Corporation Ltd CDBB340-HF

    DIODE SCHOTTKY 40V 3A DO214AA
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    DigiKey CDBB340-HF Digi-Reel 3,550 1
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    NAC CDBB340-HF 15,000 1
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    YAGEO Corporation CC1812KKX7RDBB332

    CAP CER 3300PF 2KV X7R 1812
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    DigiKey CC1812KKX7RDBB332 Cut Tape 2,352 1
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    CC1812KKX7RDBB332 Digi-Reel 2,352 1
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    CC1812KKX7RDBB332 Reel 1,000 1,000
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    Avnet Americas CC1812KKX7RDBB332 Reel 24 Weeks 1,000
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    Mouser Electronics CC1812KKX7RDBB332 1,090
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    Avnet Abacus CC1812KKX7RDBB332 25 Weeks 1,000
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    Ozdisan Elektronik CC1812KKX7RDBB332
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    DBB3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A43L0616A

    Abstract: A43L0616AV
    Text: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001


    Original     		PDF A43L0616A A43L0616A A43L0616AV

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    Untitled

    Abstract: No abstract text available
    Text: Pr E2G1050-17-X1 el im y 4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    Original     		PDF E2G1050-17-X1 304-Word MD56V62400/H cycles/64

    active suspension

    Abstract: MD56V62800A
    Text: Pr E2G1054-18-62 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    Original     		PDF E2G1054-18-62 152-Word MD56V62800A cycles/64 active suspension

    dba1

    Abstract: VG3617161ET
    Text: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


    Original     		PDF VG3617161ET VG3617161ET 288-word 16-bit 50-pin 166MHz, 143MHz, 125MHz 1G5-0189 dba1

    MD56V62160

    Abstract: No abstract text available
    Text: Pr E2G1052-17-X1 el im y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs


    Original     		PDF E2G1052-17-X1 576-Word 16-Bit MD56V62160/H cycles/64 MD56V62160

    8X13

    Abstract: A43L0632
    Text: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 1, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.


    Original     		PDF A43L0632 MO-205. 8X13 A43L0632

    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) len471) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI

    WED416S8030A

    Abstract: No abstract text available
    Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)


    Original     		PDF M52D16161A 16Bit

    M12L64164A

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		PDF M12L64164A M12L64164A-5TG M12L64164A-6TG M12L64164A-7TG M12L64164A-5BG M12L64164A-6BG M12L64164A-7BG 200MHz 166MHz 143MHz M12L64164A

    dbb4

    Abstract: No abstract text available
    Text: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control


    Original     		PDF FMS9884A 500ps AD9884A 1000mV DS30009884 dbb4

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007


    Original     		PDF M52S128324A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)


    Original     		PDF Page44 54-LEAD 400mil) M12L64164A 130mA-- 180mA

    dba1

    Abstract: MS82V16520 QFP100-P-1420-0
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MD56V62400

    Abstract: MD56V62400H TSOPII54
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G1050-17-X1 MD56V62400/H MD56V62400/H 304-Word MD56V62400/HCMOS4 09664ms Latency23 54400milTSOP TSOPII54-P-400-0 80-KMD56V62400/H-xxTA MD56V62400 MD56V62400H TSOPII54

    K4S561633C

    Abstract: K4S561633C-RL
    Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).


    Original     		PDF K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C

    MD56V62320

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control


    Original     		PDF FMS9884A 500ps AD9884A 1000mV DS30009884

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control


    Original     		PDF FMS9884A 500ps AD9884A 1000mV DS30009884

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201

    8X13

    Abstract: A43E06321
    Text: A43E06321 Preliminary 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 21, 2005 Preliminary July, 2005, Version 0.0


    Original     		PDF A43E06321 MO-205. 8X13 A43E06321

    A43E16161

    Abstract: A43E16161V
    Text: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0


    Original     		PDF A43E16161 54-pin A43E16161 A43E16161V

    rca ca 3079

    Abstract: RCA 3079 MS82V48540 MS82V48540-7 MS82V48540-8 MT53B768M32D4NQ-053 WT:B
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF FJDS82V48540-01 MS82V48540 216-Word 32-Bit MS82V48540 536-Row 256-Column TSOPIITSOPII86-P-400-0 MS82V48540-xTA rca ca 3079 RCA 3079 MS82V48540-7 MS82V48540-8 MT53B768M32D4NQ-053 WT:B