XPQR8308QB
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
|
|
TRS8E65H
|
|
Toshiba Electronic Devices & Storage Corporation
|
SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L |
|
|
TBAW56
|
|
Toshiba Electronic Devices & Storage Corporation
|
Switching Diode, 80 V, 0.215 A, SOT23 |
|
|
XPQ1R00AQB
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
|
|
TRS10E65H
|
|
Toshiba Electronic Devices & Storage Corporation
|
SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
|
|