Untitled
Abstract: No abstract text available
Text: SatCònV Electronics FMIAA001 XXX D XA N FG O ' • • • • • • • • • • • • • • • • • • • • • • • • • • • • • « • • • • • • • • • • • a « * XXX specifies attenuation e.q. 050 is 5.0 dB
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FMIAA001
SATCS00031
AA001050DXAFGO
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Untitled
Abstract: No abstract text available
Text: jU L 6 «* HITTITE MICROWAVE CORPORATION GaAs MMIC Voltage-Variable Attenuator HMC121 PRELIMINARY D ATASHEET, APRIL 1992 Features WIDE BANDWIDTH: DC-15GHZ LOW PHASE SHIFT VS ATTENUATION 30dB ATTENUATION RANGE Typical Performance SIMPLIFIED VOLTAGE CONTROL
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HMC121
DC-15GHZ
HMC121
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Untitled
Abstract: No abstract text available
Text: FMIAAOOIxxx D XA N FG O * xxx specifies attenuation e.q. 030 is 5.0 dK T h in F ilm C h ip A tten u a to rs F eatures • Surface mount chip attenuator ideal for applications hybrid circuits reqjiring precision attenuation in a small form factor • Single component reduces circuit area and board space
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22GHz
250mW
FMIAA001
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Untitled
Abstract: No abstract text available
Text: T h in F i l m W id e b a n d T e r m in a t io n F eatu res • Surface mount chip termination ideal for applications hybrid circuits requiring high frequency performance in a small form factor • Aluminum Nitride (AIN) substrate supports 20W power dissipation with appropriate heat sink
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20GHz
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50X50X15
Abstract: No abstract text available
Text: ' ^ SatCouX Electronics J FMITN0100500XENFGG T h in F ilm W id e b a n d T e r m in a t io n F ea tu r es Surface mount chip termination ideal for applications hybrid circuits requiring high frequency performance in a small form factor Aluminum Nitride (AIN) substrate supports 20W
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FMITN0100500XENFGG
SATCS00030
50X50X15
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