DD 127 D TRANSISTOR Search Results

DD 127 D TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DD 127 D TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TE1509 Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of	Original	TE1309 TE1400 TE1401 TE1402 TE1403 TE1404 TE1407 TE1408 TE1409 TE1410 TE1509 TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE	PDF
dd 127 Abstract: GS 069 CHM13N07PAPT motor mosfet 55a6m Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CHM13N07PAPT CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A	Original	CHM13N07PAPT O-252A O-252A) dd 127 GS 069 CHM13N07PAPT motor mosfet 55a6m	PDF
CHM13N07PAGP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE	Original	CHM13N07PAGP O-252) CHM13N07PAGP	PDF
DD 127 D TRANSISTOR Abstract: STP4NA100 Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC	Original	STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100	PDF
DD 127 D TRANSISTOR Abstract: STP4NA100 Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	STP4NA100 100oC O-220 DD 127 D TRANSISTOR STP4NA100	PDF
DD 127 D TRANSISTOR Abstract: STP4NA100 Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC	Original	STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100	PDF
H5NA100FI Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STW5NA100 STH5NA100FI W5NA100 H5NA100FI 100oC O-247 ISOWATT218 H5NA100FI h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA	PDF
STH5NA100FI Abstract: STW5NA100 TRANSISTORS 132 GD Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STW5NA100 STH5NA100FI O-247 ISOWATT218 STH5NA100FI STW5NA100 TRANSISTORS 132 GD	PDF
DD 127 D TRANSISTOR Abstract: No abstract text available Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.	Original	STU/D9916L O-252 O-251 O-252AA U/D9916L Tube/TO-252 O-252 DD 127 D TRANSISTOR	PDF
STH5NA100FI Abstract: STW5NA100 Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING	Original	STW5NA100 STH5NA100FI O-247 ISOWATT218 STH5NA100FI STW5NA100	PDF
600N25N Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 600N25N DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G	PDF
Untitled Abstract: No abstract text available Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature	Original	IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3	PDF
600N25N Abstract: No abstract text available Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 600N25N PG-TO220-3 600N25N	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface	OCR Scan		PDF

MOTOROLA POWER TRANSISTOR lc 945 Abstract: zener ap 474 940 629 MOTOROLA 113 Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.	OCR Scan	RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113	PDF
MARKING code WMM RF transistor Abstract: No abstract text available Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich Halbleiter, M arketing-Kom m unikation,	OCR Scan	P-MQFP-44-2 GPM05622 MARKING code WMM RF transistor	PDF
BUZ80AFI Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY	OCR Scan	BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b	PDF
cd40118 Abstract: CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM Text: , February 1988 CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM /CD4081BC Quad 2-Input AND Buffered B Series Gate General Description Features These quad gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source	OCR Scan	CD4071BM/CD4071BC CD4081BM/CD4081 V-10V-15V cd40118 CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM	PDF
SMD Transistor NI Abstract: smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D atasheet 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbieiter, Marketlng-Kommunikation, BalanstraBe 73,	OCR Scan	P-MGFP-44-2 441Index GPM05622 SMD Transistor NI smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv	PDF
2SK790 Abstract: HSO16 2SK79 1SV35 Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS	OCR Scan	TDT725G 300uA EGA-2SK790-A EGA-2SK790-5 2SK790 HSO16 2SK79 1SV35	PDF
SIEMENS 3 TB 40 17 - 0A Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A Text: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,	OCR Scan	P-MQFP-44-2 GPM05622 SIEMENS 3 TB 40 17 - 0A SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A	PDF
SMD transistor MARKING code RIP 31 Abstract: No abstract text available Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich H albleiter, M arketing-Kom m unikation,	OCR Scan	UET10276 QFP-44-2 44Index GPM05622 SMD transistor MARKING code RIP 31	PDF
Untitled Abstract: No abstract text available Text: Zjï SGS-THOMSON ¡[LieraMe STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss R d S oii Id S T W 5 N A 1 00 S T H 5N A 1 00 F I 1 0 00 V 1 0 00 V < 3 .5 Q. < 3 .5 CÌ 4 .6 A 2 .9 A TYPICAL R D S (on) = 2.9 Î2	OCR Scan	STW5NA100 STH5NA100FI P025C	PDF
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ S T P 4 N A 100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 4 N A 1 00 1000 V R dS(oii) <3. 5 Q. Id 4.2 A . • TYPICAL RDS(on) =2.9 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan		PDF

Privacy Settings

DD 127 D TRANSISTOR Search Results

DD 127 D TRANSISTOR Result Highlights (5)

DD 127 D TRANSISTOR Datasheets Context Search

TE1509

dd 127

CHM13N07PAGP

DD 127 D TRANSISTOR

DD 127 D TRANSISTOR

DD 127 D TRANSISTOR

H5NA100FI

STH5NA100FI

DD 127 D TRANSISTOR

STH5NA100FI

600N25N

Untitled

600N25N

Untitled

MOTOROLA POWER TRANSISTOR lc 945

MARKING code WMM RF transistor

BUZ80AFI

cd40118

SMD Transistor NI

2SK790

SIEMENS 3 TB 40 17 - 0A

SMD transistor MARKING code RIP 31

Untitled

Untitled