Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE b 2 H tì f i 5 tì DD1734b SSD • M67709UL 335-350MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : P in : RF INPU T © V C C I : 1st, DC SUPPLY @VBB : BASE BIAS SUPPLY V C C 2 : 2nd. DC SUPPLY ®Po : RF O UTPUT ® G N D : FIN
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DD1734b
M67709UL
335-350MHZ,
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M67705l
Abstract: No abstract text available
Text: b 2 4 ci fl Stí DD1733E Thb • MITSUBISHI RF POWER MODULE M67705L 400-430MHZ, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 Z . ¥ o _ +1 01 4>0 .4 ± 0.2 5 ±1 9+1 9+ 1 P IN : 5 + 1 8 .5 + 1 P in
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DD1733E
M67705L
400-430MHZ,
M67705l
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"SERIES MELPS 740"
Abstract: MELPS740 M3742 80P6N M37428RFS MELPS 740 MELPS-740 mcl plp cd controller M37428
Text: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.
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b24Tfl2fl
DD173S3
M37428M4-XXXFP
M37428M4-XXXFP
M37428RFS/M37428M4-XXXFP
80-pin
M37428RFS
P31/Xcin
"SERIES MELPS 740"
MELPS740
M3742
80P6N
MELPS 740
MELPS-740
mcl plp
cd controller
M37428
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2N5296 RCA
Abstract: 2n5296 transistor RCA-2N5294 rca 2N5298 2N5296 2N5298 2N5294 KC140 92CU-402B2 regulator ic 2n5294
Text: üï 3875081 G E S O L I D S T A TE General-Purpose Power Transistors DE 1 3 f l 7 5 0 f l l DD173flD 7 01E D 17380 ~ 7~~3 3 —/ f 2N5294, 2N5296, 2N5298 File Number 322 Silicon N-P-N Transistors
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3fl750fll
DD173Ã
2N5294,
2N5296,
2N5298
2N5294)
2N5296)
2N5298)
RCA-2N5294
2N5296 RCA
2n5296 transistor
rca 2N5298
2N5296
2N5294
KC140
92CU-402B2
regulator ic 2n5294
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE bEH'iôST DD173SD Tfll • M67709M 390-430MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : Pin © VCCI @ V8B VCC2 ®PO ®G ND RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25'C unless otherwise noted
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DD173SD
M67709M
390-430MHZ,
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Untitled
Abstract: No abstract text available
Text: DD1737S b4P • MITSUBISHI RF POWER MODULE M67723H 276-284MHZ, 7.2V, 1.5W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45 ± 1 42 t1 2 - R 1 . 5 ± 0 .3 & ■€ 2> _ ir» o -H o> g h k £>- <S> (D 0 0 .4 ± 0.2 5±t 9± 1 9± 1 5±1
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DD1737S
M67723H
276-284MHZ,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} ~TÏ DE § ^ 0 ^ 7 2 5 0 99D 17334 9097250 TOSHIBA DISCRETE/OPTO DD17334 DT'^^I TPS606 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . TAPE, CARD READERS . POSITION SENSOR . Spectrally and Mechanically Matched with IR Emitter
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DD17334
TPS606
TIN104
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Untitled
Abstract: No abstract text available
Text: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.
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M37428M4-XXXFP
DD173S3
M37428RFS/M37428M4-XXXFP
M37428M4-XXXFP
80-pt
P31/Xcin
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IRF830
Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
Text: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re
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IRF830/831/832/833
IRFP430/431Z432/433
b414e
IRF830/IRFP430
IRF831
/IRFP431
IRF832/IRFP432
IRF833/IRFP433
IRF830
IRFP430
rectifier 832
IRF833
IRF832
IRFP431
IRF830.831
irfp4303
diode on 832
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RCA9202C
Abstract: ignition tci TCI ignition RCA*9202A RCA9202A RCA9202B
Text: ~G E SOLID STATE- 3875081 G E ‘ SOLID — STATE — " """ 3a7SDfll 01E 17315 D DD1731S r - 3 3 *2 ? Darlington Power Transistors F ile N u m b e r 1414 RCA9202A, RCA9202B, RCA9202C
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RCA9202A,
RCA9202B,
RCA9202C
92CS-39969
TQ-220AB
RCA9202C*
IG3-39317
9ZCS-33322
RCA9202C
ignition tci
TCI ignition
RCA*9202A
RCA9202A
RCA9202B
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M57796H
Abstract: No abstract text available
Text: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B
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M57796H
150-175MHz,
DD173D1
M57796H
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY C Y 7C 374i UltraLogic 128-Macrocell Flash CPLD Features • • • • 128 macrocells in eight logic blocks 64 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology — JTAG interface • Bus Hold capabilities on all l/Os and dedicated inputs
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128-Macrocell
84-pin
100-pin
CY7C373i
CY7C374i
FLASH370iâ
173SR
CY7C374i
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UPD1714G
Abstract: KS1160 DH 7177 lf324 upd1714 EVAKIT-1700 RN3A
Text: ~ NE C ELECTRONICS INC Tfl d F | L4275E5 QQ173SÌ. 3 | T~77'0$-0$ V UPD1714G Internal Prescaler, PLL synthesizer, and LCD driver Microcontroller The UPD1714G is a 4-bit CMOS microcontroller with prescaler t hat can input up to 150 MHz, PL L synthesizer, and 1/2 duty, 1/2
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QQ173S4.
upd1714g
UPD1714G
16-bit
IEM-1095
-27-HPK
KS1160
DH 7177
lf324
upd1714
EVAKIT-1700
RN3A
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 4Ö55452 0017370 bSE D PD-2.253 International S Rectifier i 53c m q . s e r ie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Features 153CMQ. Units Characteristics lF AV Rectangular The 153CMQ isolated, center tap Schottky rectifier module
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153CMQ.
153CMQ
MA554S2
D017373
D-336
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
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Untitled
Abstract: No abstract text available
Text: CXP507001 SONY Piggyback type CM OS 4-bit Single Chip Microcomputer Description The CXP50700 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP50712/CXP50716. 80 pin PQFP Ceramic
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CXP507001
CXP50700
CXP50712/CXP50716.
19MHz
ns/32kHz
27C256
CXP50700-U01
80-pin
12K-byte/16K-byte
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CXP5034
Abstract: No abstract text available
Text: CXP5084/5086 SONY. CMOS 4-bit Single Chip Microcomputer Description The C X P 5 0 8 4 / 5086 is a C M O S 4 -bit microcomputer which consists of 4-bit CPU, ROM, RAM, I / O port, 8-bit timer, 8-bit tim er/ counter, 18-bit time base timer, 8-bit serial I/O,
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CXP5084/5086
18-bit
CXP5086)
CXP5084)
DD173Ã
CXP5Q84/5086
64pin
50mil
P-S4P-01
64-P-0750-A
CXP5034
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Untitled
Abstract: No abstract text available
Text: b E m fle i D G1736L. 137 _ • MITSUBISHI RF POWER MODULE M67732 1240-1300MHZ, 7.2V, 1W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 45±1 42 ± 1 2 - R 1 . 5 ± 0 .3 z ; _ o <T> ¡S0.4 ± 0.2 PIN : 5+ 1 9±1 9+ 1 5 + 1 8 .5 + 1 P in : RF INPUT
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G1736L.
M67732
1240-1300MHZ,
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UPD1719G
Abstract: T-77 US281AS1700 SE-1700
Text: N E C ELECTRONICS INC Tfl dF|L:42752S 0D173S3 t D 7 ~ 7 '7 - 0 S '- 0 S UPD1719G Internal Prescaler, PLL Synthesizer, and LCD driver Microcontroller The uPD1719G is a 4-bit CMOS microcontroller with'prescaler that can input up to 150 MHz, PLL synthesizer, and 1/2 duty, 1/2
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b457sas
0d173s3
UP01719G
UPD1719G
16-bit
-27-S4PK
T-77
US281AS1700
SE-1700
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MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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