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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D IS CRET E/ OP TO } TO 9097 25 0 T O S H I B A <DISCRETE/OP O D eT| T G 'iV ESO 90D SEMICONDUCTOR 16311 DD1L311 D T -3 '3 -3 5 TOSHIBA GTR MODULE MG25M1BK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE Unit In mm HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DD1L311 MG25M1BK1 IC-25A) DDlb314 Te---40â LLEC70R-EMITTER 70LTA0E eca-mg25mibki-4

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


    OCR Scan     		PDF 2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates